1E05 Search Results

Cross-reference

Abstract: TE CONNECTIVITY jack socket socket 2011 2-1437012-4
Contextual Info: Instruction Sheet 408-8438 29 SEP 11 Rev B Jack Socket Assembly Install jack socket and  attach lockwasher and  nut. For use with 1.57 [.062] thick panel. 408-8438 was 1E05406 A 408-8438 (was 1E05406 A) 29 SEP 11 Rev B 29 SEP 11 Rev B 3.89 ±0.05 [.153 ±.002]

tyco

Abstract: jack socket Tyco Electronics pa 2004 Cross-Reference
Contextual Info: 408-8435 408-8435 408-8435 02 DEC 04 Rev A 02 DEC 04 Rev A 02 DEC 04 Rev A was 1E05407 A Jack Socket Assembly Install jack socket and 3.89+0.05 [.153+.002] Dia. Holes in Panel (was 1E05407 A) Jack Socket Assembly Install jack socket and 3.89+0.05 [.153+.002]

AOD5B60

Contextual Info: AOD5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

Contextual Info: Doc No. TT4-EA-14292 Revision. 6 Product Standards MOS FET FJ3P02100L FJ3P02100L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0 For Load-switching 0.2 3 2.0 0.25  Features 1  Low drain-source ON resistance:RDS(on)typ. = 12.0m （VGS = -2.5 V)

Contextual Info: VSKDS400/045 www.vishay.com Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 200 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996

JEDEC-JESD47

Abstract: vs-30pt100
Contextual Info: VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency

Contextual Info: Doc No. TT4-EA-14765 Revision. 1 Product Standards MOS FET FJ3P01130L FJ3P01130L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0  Application 0.2 3  Battery FET  Load switch 2.0 0.25  Features Low drain-source ON resistance:RDS(on)max. = 10.0mΩ （VGS = -3.5 V)

SEMISOUTH

Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

in4577

Abstract: CLM2950 CLM2950ACN-X CLM2950CN-X CLM2951 CLM2951ACP-X CLM2951ACS-X CLM2951CP-X CLM2951CS-X
Contextual Info: 150mA Low Dropout Voltage Regulators CORPORATION CLM2950 / CLM2951 FEATURES • 5V, 3.3V, and 3.0V Versions at 150mA Output • Very Low Quiescent Current Dropout Voltage • Low • Extremely Tight Load and Line Regulation • Very Low Temperature Coefficient

Contextual Info: SKiM 500 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 450 / 340 900 / 680 ± 20 1390 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

BUK542

Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

BUK104-50L

Abstract: BUK104-50S BUK104-50US
Contextual Info: PHILIPS bSE INTERNATIONAL D • 711002b D 0 b 3 f l43 Monolithic temperature and overloadprotected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving

KIMD

Abstract: 1400W Diode RJ 4B HFAN-08 TOSA CWDM
Contextual Info: 19-6025; Rev 0; 9/11 EVALUATION KIT AVAILABLE MAX3711 125Mbps to 3.125Gbps Integrated Limiting Amplifier/ Laser Driver with Dual-Loop Power Control General Description Benefits and Features The MAX3711 limiting amplifier and laser driver provides a highly integrated, low-cost, high-performance PMD

RG305

Abstract: diode 10a 400v
Contextual Info: AOT10B60D 600V, 10A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

BUK443

Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

JDP2S05FS

Contextual Info: JDP2S05FS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S05FS Unit:mm UHF~VHF Band RF Switch Applications 0.6±0.05 A 0.1 0.8±0.05 Low series resistance: rs = 1.5 Ω typ. Low capacitance: CT = 0.32 pF (typ.) Characteristics 0.07 Absolute Maximum Ratings (Ta = 25°C)

480 diode

Contextual Info: Date:- 9th May, 2013 Data Sheet Issue:- A1 Provisional Data Rectifier Diode Types W5139T#420 to W5139T#480 Development Type No.: WX377T#480 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4200-4800

T0258HF65G

Contextual Info: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C

E137938

Abstract: 3E50 1E35 1E125UM
Contextual Info: Standard Pack: 12 Weight: 0.3A - 32A 1.8kg 3.97 lb. 40A - 63A 1.98kg (4.37 lb.) Two Pole Standard Pack: 6 Weight: 0.3A - 32A 1.8kg (3.97 lb.) 40A - 63A 1.98kg (4.37 lb.) Rated Current 0.3A 0.5A 0.75A 0.8A 1.0A 1.6A 2.0A 2.5A 3.0A 3.5A 4.0A 5.0A 6.0A 8.0A

R1223N252A

Abstract: R1223N332H CD105 HAT1020R R1223N R1223N152H R1223N332A RB491D Si3443DV
Contextual Info: 12345 ‘99.12.8 PWM/VFM step-down DC/DC Converter R1223N Series n OUTLINE The R1223N Series are PWM step-down DC/DC Converter controllers with low supply current by CMOS process. Each of these ICs consists of an oscillator, a PWM control circuit, a reference voltage unit, an error amplifier,

PD2111

Abstract: 403CNQ100PBF 403CNQ 40HF P460
Contextual Info: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A

CME7660-000

Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
Contextual Info: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction