SEMISOUTH Search Results

JFET semisouth

Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET
Contextual Info: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A

SEMISOUTH

Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SEMISOUTH

Abstract: SDP60S120D SemiSouth Laboratories sdp60s
Contextual Info: Silicon Carbide SDP60S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current

Contextual Info: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm

SJEP120R100A

Abstract: JFET semisouth SEMISOUTH SGDR300P1 silicon carbide JFET SGD300P1 silicon carbide j-fet SJEP120R100 silicon carbide SemiSouth Laboratories
Contextual Info: Silicon Carbide PRELIMINARY SJEP120R100A Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C

ASJD1200R045

Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SiC JFET

Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

JFET semisouth

Abstract: SiC JFET SJEP120R063 SEMISOUTH sjep120r0
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

Contextual Info: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 m max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application •    Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features  

SEMISOUTH

Abstract: SDP30S120 SDP30s SDP30S120 Carbide Schottky Diode sine wave ups SCHEMATIC induction heating schematic solar inverter SemiSouth Laboratories silicon carbide
Contextual Info: Silicon Carbide PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage

SJEP120R100

Abstract: SEMISOUTH silicon carbide JFET SJEP120 JFET semisouth silicon carbide j-fet SJEP semisouth sjEp120R100 induction heating schematic semisouth JFET
Contextual Info: Silicon Carbide PRELIMINARY SJEP120R100 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C

ASJE1700R550

Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

ASJE1200R063

Abstract: SiC JFET JFET semisouth SJEP120 SJEP120R063 SEMISOUTH silicon carbide JFET sjep120r0
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: Die Inside RDS ON max 0.063 V : ETS,typ 440 J • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

SJEP170R550

Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

SDC30S120

Abstract: SEMISOUTH SGDR2500P2 SJEC120R100 SEMISOUTH SDC30S120 APTJC120AM13VCT1AG Semisouth SJEC120R100 JFET semisouth sic jfet diode t25 4 c3
Contextual Info: APTJC120AM13VCT1AG VDSX = 1200V RDSon = 13 mΩ max @ Tj = 25 °C ID = 100 A @ Tc = 50 °C Phase leg SiC Power Module Application • • • • Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features • • SiC JFETX, Normally off 8 * SJEC120R100 in parallel per switch

Contextual Info: News Release FOR IMMEDIATE RELEASE Contacts: Product Communications: Michael Frisch Phone: +49 89 8780 67-147 michael.frisch@vincotech.com Media Contact: Karina Seifert Phone: +49 89 8780 67-115 karina.seifert@vincotech.com A COMPLETE RANGE OF POWER MODULES WITH VARIOUS SiC SWITCHES FOR HIGHPERFORMANCE, THREE-PHASE SOLAR INVERTERS

Contextual Info: News Release FOR IMMEDIATE RELEASE Contacts: Media Contact: Karina Seifert Phone: +49 0 89 878067-115 karina.seifert@vincotech.com Product Contact: Michael Frisch Phone: +49 (0)89 878067-142 michael.frisch@vincotech.com FIRST STANDARD POWER MODULES WITH NORMALLY OFF SiC JFETs FOR HIGHPERFORMANCE SOLAR INVERTERS

ASJE1200R100

Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

Integrated cooling solutions hot up

Contextual Info: J U L Y 2 0 1 2 I S S U E N ° 6 I N D U S T R Y R E V I E W Integrated cooling solutions hot up Stacks of potential: Danfoss is using its ShowerPower cooling solution to build three dimensional power blocks which will offer especially high power density.

SDP20S120D

Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
Contextual Info: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature

SJEP120R125

Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120
Contextual Info: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2

SEMISOUTH

Abstract: SDA10S120 C-183 silicon carbide
Contextual Info: Silicon Carbide PRELIMINARY SDA10S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current

SJDP120R085

Abstract: SEMISOUTH sjdp120 SJDP silicon carbide JFET JFET semisouth JFET semisouth Semisouth, SJDP120R085 silicon carbide j-fet silicon carbide sjdp120r
Contextual Info: Silicon Carbide PRELIMINARY SJDP120R085 Product Summary Normally-On Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C

SEMISOUTH

Abstract: SDP10S120D C2652 induction heating schematic silicon carbide "silicon carbide" device
Contextual Info: Silicon Carbide SDP10S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - Zero Reverse Recovery Current