SJEP170R550
Abstract: SEMISOUTH 3E05 silicon carbide JFET JFET semisouth silicon carbide j-fet SJEP170 SJEP170R550 datasheet high voltage smps SJEP
Contextual Info: Silicon Carbide PRELIMINARY SJEP170R550 Product Summary Normally-OFF Trench Silicon Carbide Power JFET BVDS RDS ON max ETS,typ Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior
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sjep170r550o-247semisouth3e05+7silicon carbide jfetjfet semisouthsilicon carbide j-fetsjep170sjep170r550 datasheethigh voltage smpssjep
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ASJE1700R550
Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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asje1700r550o-258260ocmil-prf-19500+12mil-std-750sjep170r550o-247o-257sic jfetjfet semisouth3e05semisouthsilicon carbide j-fetsilicon carbide jfetsjep170sjep
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SJEP170R550
Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:
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asje1700r550o-257260ocmil-prf-19500+7mil-std-750sjep170r550o-247semisouth jfet3e05semisouthjfet semisouth
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