BZW86 Search Results

DIODE BZW70

Abstract: SOD-18 bzw70 BZW91 BZW70 33 BZW86 SOD-51 BZW70/24
Contextual Info: Silicon surge suppressor diodes selection guide book 1 part 4 S ta n d -o ff v o lta g e V sq pulse 6.2 7.5 8.2 - P o la rity 40QW BZW70 SO D -18 Norm. 5kW BZW91 DO-5 Both D O -30 Both 13kW BZW86 N orm al p o la rity = ca th o de to stu d ; reverse p o la rity (R ) = a no de to stud.

BZW86 Series

Abstract: BZW86-7V5R BZW86 BZW86-56 BZW86-27 BZW86-7V5 BZW86-9V1 IEC134
Contextual Info: N AMER P H I L I P S / D I S C R E T E TÜD D • 1 ^ 5 3 ^ 3 1 QDlObTS b BZW86 SERIES TRANSIENT SUPPRESSOR DIODES A ra n g e of diffu sed silic o n d io d e s in a D O -30 m e ta l envelope intended fo r u s e in th e p r o ­ te c tio n of th e e le c tr ic a l and e le c tro n ic equipm ent a g a in s t v o lta g e tr a n s ie n ts .

Contextual Info: BZW86-43R Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage48 @I(R) (A) (Test Condition)2.0 V(RWM) (V) Work.Pk.Rev.Voltage43 I(PPM) Max.(A)Pk.Pulse Current250

Contextual Info: BZW86-10R Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage11 @I(R) (A) (Test Condition)10 V(RWM) (V) Work.Pk.Rev.Voltage10 I(PPM) Max.(A)Pk.Pulse Current1.0k

Contextual Info: BZW86-47R Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage52 @I(R) (A) (Test Condition)2.0 V(RWM) (V) Work.Pk.Rev.Voltage47 I(PPM) Max.(A)Pk.Pulse Current250

BZW86-27

Abstract: BZW86 BZW86-7V5R BZW86-56 BZW86 Series BZW86-7V5 BZW86-9V1 IEC134 DO-30 philips RSM
Contextual Info: TGD D N AMER PHILIPS/ D IS CR ET E • bbS3T31 0GlDb‘i2 b BZW86 SERIES TRANSIENT SUPPRESSOR DIODES A range of diffused silicon diodes in a DO-30 metal envelope intended for use in the p r o ­ tection of the electrical and electronic equipment against voltage transients.

BTX94

Abstract: BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e BT138 BTW37 T0220AB
Contextual Info: Thyristors and triaos abridged data of principal types book 1 part 5 TRIACS The type number suffix is the VD pM rating Ratings • t (RMS) Tmb * 85°C I trm (A) (A ) I t s m 1) l 2t t - 10ms {A ) dlT dt (A 2s) (A //is) Characteristics dVD V qt d t m8X normal co m m u tatin g m in.

BY223

Abstract: BY277 BYX50-200R BYX50-200 bridge RECTIFIER GI by277 750r diode BY223 600R 800R BYW19
Contextual Info: Silicon rectifier diodes and bridge m odules fast recovery rectifier diodes Type No. O utline Drawing reference A (V) (V) (A ) SOD-38 5* 1500 1500 10 20 SOD-38 7 800 1000 800 800 20 7 50 100 150 50 100 150 DO-4 B1 7 200 300 350 600 SOD-38 7 600R 750R SOD-38

BAV46

Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Contextual Info: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100

AC128 transistor

Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
Contextual Info: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features

tube az2

Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Contextual Info: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)

bc657

Abstract: BC566 BC659 BC159 BC463 BCX36 BCY34A BC167 BC462 transistor bc668
Contextual Info: Transistors P-N-P silicon lo w /m ed iu m pow er transistors book 1 parts 1 and 2 Type No. 1 3 o e ! VcBO V ce.0 V (V) M axim um Ratings ' cm Ic <AV) (m AJ Tj P«ot (m A) a t 2 5 °C <°C) (mW) 200 200 50 200 3 60 100 125 3 50 h FE m in. m ax. at le (m A)

DIODO LN4148

Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
Contextual Info: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr

BZX93

Abstract: BZX90 BY409 BYX35 BY209 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3
Contextual Info: Diodes low power high voltage diodes I fiav max. Tamb = 3 5°C T oh= 50 C <mA) m A) V rwm max. <kV> Type No. Description 2.5 - B Y182 12 E.H .T. rectifiers in plastic envelopes. 2.5 - B Y 209 11.5 E .H .T. soft-recovery re ctifie r diode. 2,5 - B Y 409

BD139 heat sink

Abstract: BD133 BD23B box78 bux87 B0137 BF468 BD232 bzw86 BD136
Contextual Info: Transistors silicon plastic-encapsulated transistors book 1 parts 1 and 2 Type No. N-P-N VcBO VcEO P-N-P V Outline TO-126 M axim u m Ratings •CM IctAV) (V ) (A ) (A) T| (°C> Hfe at fT Vcasat) m in. m ax. Ic m in. m ax. Ptot Tmb= 25 C (W) Im A) (M H z) (V)

BCX33

Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
Contextual Info: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT

C5VI ezx79

Abstract: C9VI C7V6 bs9305n041 zener c7v6 C5VI BS9305 BZX79 BZY88 0B8 diode zener
Contextual Info: Silicon voltage regulator diodes low pow er book 1 part 3 400mW Tamb= so°c ± 5%voltage tolerance. Outline DO-35 Drawing reference H Measured at Test I Max. Voltage <V> Typ. Temp. Coefficient (mV/°C) Test lz (m A) Max I r at V r (V» Type No. B2X79 Nom. Zener

BT 140

Abstract: by225 100 BY225 BY224 BY179 BYW47 bridge RECTIFIER GI BZW86 BYW44 BYW46
Contextual Info: Silicon rectifier diodes and bridge modules bridge modules single phase book 1 part 4 DESIGN TYPES OUTPUT INPUT Type No. Drawing reference w I (RMS) (Vi V IRM V IWM •iSM *0(AV> lORM (V) (V) (A) (Al (A) BY 164 BO 42 120 60 25 1.4 5 BY 225 -1 0 0 »200 BR

SOT-23 X1

Abstract: BC1088 BFR63 BFR94 BCX66 BFQ18 BFT26 bd135 BD139 heat sink BFT92
Contextual Info: Microminiature devices transistors primarily intended for hybrid, thin and thick film circuits _ w Type No. = £ g 3 J I VCB0 | « Maximum Ratings Vceo IC|*V T. O a ! I V I Im A I IV I book 1 parts 1 and 2 hf t Ptg min. at 25 C <°C) Im W I

BLW64

Abstract: uhf amplifier design BFR90 BFR94 BGY36 BLW94 SOT-48 BGY33 BGY35 BGY21 BGY22
Contextual Info: Transistors book 1 parts 1 and 2 broadband r.f. power modules Type No. Drawing reference Description Frequency Supply Range Voltage MHz (V) Min. Power Output (W) p at OR ImW) Efficiency Typ. <%> BGY21 U.H.F. amplifier module designed for portable equipment

BLX14

Abstract: SOT-48 BLX88 BLX66 BLY93 BLY94 BLY33 BLY34 2N3375 810BLY transistor
Contextual Info: Transistors n-p-n r.f. power transistors book 1 parts 1 and 2 - § Type No. Maximum Ratings ^b o v ceo *cm ° K hFE 'ciav I ® £ % T* at Ptot m in - m a x - lc f r VcE sat> m ' n* m a x - at 'c Po ,8 *• GP at ty p . f at V cc Tm£ “ (V) (V) IA)

BU133

Abstract: BDY96 BU208 BU208A BU209A 2N3056 BU206 bdy97 BU326 BD182
Contextual Info: Transistors silicon n-p-n power transistors book 1 parts 1 and 2 VobO Maximum Ratings V ceo *CM IctAVl O £ V (V ) BDY38 AR3 60 40 6 BD181 BD182 BD163 AR 2 55 70 65 45 60 80 15 Type No. il (A ) (A ) (°C) Ptot Trnb“ 25 C <W) max. « le at f T VcE(Mt) min. max. lc

transistor NPN 3D SOT 153

Abstract: BRY39 BCY87 TAG thyristor BFR49 si controlled tetrode switch BRY3 BCY88 BCY89 BR101
Contextual Info: Transistors m icrowave transistors Type No. M L 1 5/2 B M L 1 5/4 B Drawing reference VCBO max. V N-P-N transistor fo r am plifiers up to S—band frequencies AN 20 0.025 N-P-N L —band p ow er transistors intended fo r com m on e m itter operation in class AG o r B

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.