BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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bft65d1279siemens 1414d1275+6germaniumgermanium drift transistordiode a811siemens halbleitergermanium transistorlegiert
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MGF1502
Abstract: CFY18 CFY13 CFY19 siemens gaas fet cfy11 CFY18-23 CFY16 CFY11 CFY14 CF930
Contextual Info: FUNKAMATEUR-Bauelementeinformation Mikrowelienbauelemente Analoge IS und N-Kanal-Feldeffekttransistoren auf Gallium-Arsenid-Basis Konvent, rechnoiog/e STATE-OF-THE-MT-T. Leuchtanzeigen, Faseropt. Komm., Bildverstärker u.a. Mikrowellentechn. Kfz-Elektronik
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cfy19cfy18-15cfy18-20cfy18-23+12cfy18-25cfy18-27cfy20o-120cfy16mgf1502cfy18cfy13siemens gaas fet cfy11cfy11cfy14cf930
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CFY19
Abstract: bf963 CFY19-18 CFY10 CFY76-08 gaasfets bf544 CFY67-08 CFY19-22 BF964S
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors Type M axim um Ratings A>s Pt G DS 20 20 20 20 20 12 30 50 30 30 30 30 200 200 200 200 200 200 23 25 25 25 18 20 20 20 30 30 200
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bf961bf963bf964sbf965+13bf966sbf988bf544bf987t092do-92bcfy19cfy19-18cfy10cfy76-08gaasfetscfy67-08cfy19-22
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CFY10
Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Contextual Info: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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q62703-f11fl23sbos00b74ccfy10+6fl235fci05siemens gaas fetcfy 10ga fet marking kcfy 18cfy 14 siemens
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CFY19
Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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b3-b3715b3715-x-x-7600transistor 131-6 bj 946transistor bc 564+8transistor bc 949 datenblatttransistor bc 545marking code ags bsp 2000siemens datenbuchbft99mmic smd amplifier marking code 19stransistor smd marking code bc rudiode smd marking 22-16
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