BCR847BF Search Results

marking Z1

Abstract: BCR847BF
Contextual Info: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V

BCR108W

Abstract: BCR142 BCR142F BCR142W BCW66
Contextual Info: BCR142. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =47kΩ • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR142/W BCR142F C 3 R1 R2

marking code MS SOT323

Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

BCR135

Abstract: BCR108W BCR135F BCR135S BCR135W BCW66
Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see

BCR108W

Abstract: BCR192 BCR192F BCR192W BCW66
Contextual Info: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR192/F/W C 3 R1 R2

BCR847BF

Abstract: BCR179 BCR179F
Contextual Info: BCR179. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit. • Built in bias resistor R1 = 10 kΩ • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR179F C 3 R1 1 2 B E EHA07180

Contextual Info: BCR119. NPN silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=4.7 kΩ • BCR119S: Two internally isolated transistors with good matching in one multichip package • BCR119S: For orientation in reel see

Contextual Info: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V

Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

Contextual Info: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Contextual Info: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22 kΩ , R2 = 22 kΩ BCR191/F/L3 BCR191T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR191 WOs

Contextual Info: BCR135. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor R1=10 kΩ, R2=47 kΩ • BCR135S: Two internally isolated transistors with good matching in one multichip package • BCR135S: For orientation in reel see

Contextual Info: BC857BF.BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF NPN

Contextual Info: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*

bfr949

Abstract: BFR949F
Contextual Info: BFR949F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA 1 • fT = 9 GHz, F = 1 dB at 1 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

ua 722 fc

Abstract: BCR847BF MARKING rks BFR94
Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFR360F

Abstract: AN077
Contextual Info: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101

BFR340F

Abstract: AN077 BFR340F TSFP-3
Contextual Info: BFR340F NPN Silicon RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation 2 3 1 • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz • Small package 1,2 x 1,2 mm 2 with visible leads

BCR108W

Abstract: BCR129 BCR129F BCR129S BCR129W BCW66
Contextual Info: BCR129. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10 kΩ • BCR129S: Two internally isolated transistors with good matching in one multichip package • BCR129S: For orientation in reel see

E6327

Abstract: BCR101 BCR101F BCR101L3 BCR101T BCR108T SC75
Contextual Info: BCR101. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR101F/L3 BCR101T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration Package BCR101F*

DIN 6784 c1

Abstract: DIN 6784 E6327 BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W infineon marking code B2 SOT23
Contextual Info: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR108T

Abstract: BCR196 BCR196F BCR196L3 BCR196T BCR196W SC75
Contextual Info: BCR196. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47kΩ , R2 = 22kΩ BCR196/F/L3 BCR196T/W C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR196 WXs 1=B

BCR198W

Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80
Contextual Info: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package