| BCR129 |  | Infineon Technologies | NPN Silicon Digital Transistor | Original | PDF | 42.04KB | 4 | 
| BCR129 |  | Infineon Technologies | Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; | Original | PDF | 209.87KB | 12 | 
| BCR129 |  | Siemens | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Original | PDF | 35.99KB | 4 | 
| BCR129E6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 | Original | PDF |  | 11 | 
| BCR129E6327HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 200MW SOT23-3 | Original | PDF | 867.42KB |  | 
| BCR129F |  | Infineon Technologies | NPN Silicon Digital Transistor | Original | PDF | 499.04KB | 10 | 
| BCR129FE6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 | Original | PDF |  | 11 | 
| BCR129FE6327 |  | Infineon Technologies | Digital Transistors - R1= 10 kOhm | Original | PDF | 482.32KB | 9 | 
| BCR 129F E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSFP-3 | Original | PDF | 867.42KB |  | 
| BCR129L3 |  | Infineon Technologies | NPN Silicon Digital Transistor | Original | PDF | 499.04KB | 10 | 
| BCR129L3E6327 |  | Infineon Technologies | Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 | Original | PDF |  | 10 | 
| BCR129L3E6327 |  | Infineon Technologies | Digital Transistors - R1= 10 kOhm | Original | PDF | 482.32KB | 9 | 
| BCR 129L3 E6327 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 250MW TSLP-3 | Original | PDF | 492.1KB |  | 
| BCR129S |  | Infineon Technologies | NPN Silicon Digital Transistor Array | Original | PDF | 42.57KB | 4 | 
| 
 | 
| BCR129S |  | Infineon Technologies | SOT363 ICmax = 100mA | Original | PDF | 42.81KB | 4 | 
| BCR129S |  | Infineon Technologies | Dual Ic = 100 mA; Package: PG-SOT363-6; Polarity: NPN; R1 (typ): 10.0 kOhm; R2: 0.0 k?; hFE (min): 120.0; Vi (on) (min): 0.5 2mA / 0.3V; | Original | PDF | 209.87KB | 12 | 
| BCR129S |  | Siemens | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) | Original | PDF | 44.27KB | 4 | 
| BCR129SE6327 |  | Infineon Technologies | Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 | Original | PDF |  | 11 | 
| BCR129SE6327HTSA1 |  | Infineon Technologies | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS 2NPN PREBIAS 0.25W SOT363 | Original | PDF | 867.42KB |  | 
| BCR129SH6327 |  | Infineon Technologies | Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SOT363 | Original | PDF |  | 11 |