BFR193L3 Search Results

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

Contextual Info: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

infineon marking L2

Abstract: BFR193L3
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

infineon AN077

Contextual Info: BFR193L3 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Contextual Info: BFR193L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz 3
For linear broadband amplifiers
fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFR193L3

Abstract: BFR340L3 marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

marking code MS SOT323

Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!

C5 MARKING TRANSISTOR

Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)

transistor packing code 3f

Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

diode Marking Code b3

Abstract: BAR90-02LRH BFR193L3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 BFR19
Contextual Info: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)

BC846 Infineon

Abstract: 1bs sot323 marking 1F SOT323 BC846 BC846A BC846B BC846BW BC847A BC847B BC850
Contextual Info: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

Contextual Info: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)

Contextual Info: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BFR94

Contextual Info: BFR949L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)

ESD8V0L1B-02LRH

Abstract: ESD8V0L1B-02EL TSLP-2-18 TSLP-2-17 PF137
Contextual Info: ESD8V0L. Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 ESD : up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs)

E6327

Abstract: marking code a4s DIN 6784 SOt323 marking code 6X BAV70F BAV70L3 BAV70 E6327 BAV70T BAV70U SC74
Contextual Info: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U 6 3 4 5 D 3 D 2 D 1 D 1 1 D 4 2 Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W 1 D 2 2 3