BFR380L3 Search Results

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

C5 MARKING TRANSISTOR

Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR193L3

Abstract: BFR380L3 marking FC
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description

marking FC

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFS380L6 NPN Silicon RF Transistor* • High current capability and low figure for 4 3 5 wide dynamic range application 2 6 • Low voltage operation 1 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Built in 2 transistors TR1, TR2: die as BFR380L3

BFR380L3

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!

infineon AN077

Abstract: AN077 BFR193L3 BFR380L3
Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

Contextual Info: BFR380L3 Linear Low Noise Silicon Bipolar RF Transistor • High current capability and low noise figure for wide dynamic range • Collector design supports supply voltage up to 5V • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure 1.1 dB at 1.8 GHz

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

an22117

Abstract: tua9001 Diplexer Schematic DVB-T Schematic mipi PCB layout an22116 BFR380 VHF lna 30 to AN221 C104
Contextual Info: L o w C o s t D V B - T /H L N A u s i n g BFR380 L3 Portable TV Applications App lication No te AN221 Revision 1.0, 2010-06-21 RF and Protect i on Devi ces Edition 2010-06-21 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

TLE4957C

Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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Contextual Info: BFS386L6 NPN Silicon RF Transistor* • Low voltage/ low current operation 4 • For low noise amplifiers 3 5 • For oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: TR1: 1.0dB at 1.8 GHz TR2: 1.1 dB at 1.8 GHz • Built in 2 Transistors TR1: die as BFR360L3,

BFR380L3

Abstract: BFS380L6
Contextual Info: BFS380L6 NPN Silicon RF Transistor 4 Preliminary data
High current capability and low figure for 3 5 wide dynamic range application 2 6
Low voltage operation 1
Ideal for low phase noise oscillators up to 3.5 GHz
Low noise figure: 1.1 dB at 1.8 GHz

BAR88

Abstract: TSLP "Varactor Diodes" BA892-02L BAR63-02L BAR64-02L BAR88-02L BAS70-02L BAT62-02L BBY57-02L
Contextual Info: P R O D U C T B R I E F New Discrete Products in Ultrasmall and Leadless TSLP Packages Superior chip-scale packaging concepts and leading edge manufacturing processes enable Infineon to be the first to come up with an innovative plastic leadless package for discrete devices