TSLP Search Results

FCS-32

Abstract: CX28560 fcs32
Contextual Info: 500335A April 22, 2002 CX28560 Product Bulletin Product Affected: CX28560-11P, 680-pin TBGA package 40 mm This document describes conditions that may cause the operation of the above device to deviate from published specifications. TSLP Channel Status Register Always Reads Zero

E6327

Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
Contextual Info: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33410 REV A- 10-2011 PARTIAL LISTING ACCEPTS 10 LEAD .5 mm PITCH DEVICES IDS33410 INFINEON TSLP9-1 ON SEMI UDFN10 2.5x1,0.5P WLCSP10, 2.46x0.96 TEXAS INST.

TSLP-2-7

Abstract: TSLP date code Sanyo semiconductor TSLP-2-7-AM090819-01 TSLP27
Contextual Info: Ou t 1 i n e D r a w i n g Measure Mass 50/1 NTS 0. 0006 0.6±o. os (g) Unit mm IFor reference Polarity discriminating mark 2: SANYO P a c k a g e Code JEDEC P a c k a g e Code JE I TA P a c k a g e Code TSLP-2-7 D r a w i n g No. E n a c t No. Drawn Checked

AN-081

Abstract: BGA619
Contextual Info: Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package no Lead or Halogen

Infineon Technologies Silicon Tuning Diode

Contextual Info: BBY52. Silicon Tuning Diodes
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless

BFS360L6

Contextual Info: BFS360L6 NPN Silicon RF Transistor 4 Preliminary data
Low voltage/ Low current operation 3 5
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1
Low noise figure: 1.0 dB at 1.8 GHz 6 T R 1 5 T R 2 4 P-TSLP-6-1 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFS386L6

Abstract: tr1150
Contextual Info: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6
Low voltage/ low current operation 1
For low noise amplifiers
For oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: TR1: 1.0dB at 1.8 GHz P-TSLP-6-1 TR2: 1.1 dB at 1.8 GHz 6

Contextual Info: BBY52. Silicon Tuning Diodes
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless

Contextual Info: BBY52. Silicon Tuning Diodes • Ηigh Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO`s in mobile communications equipment • Pb-free RoHS compliant package BBY52-02L BBY52-02W  Type BBY52-02L BBY52-02W Package TSLP-2-1

Contextual Info: BAR 67-02L Silicon PIN Diode Preliminary data
Low loss RF switch 2
RF attenuator
Low series capacitance and resistance 1
Ultra small leadless package 1 2 EHA07001 Type BAR 67-02L Marking TT Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings

TSLP-2-17

Contextual Info: Outline drawing Me a s u r e M a s s g Un i t 5 0 / 1 ( NTS) 0. 0 0 0 6 IFor reference mm 0. 6 ± 0 . 05 2: SANYO P a c k a g e Code JEDEC P a c k a g e Code JEITA Package Code Type Number TSLP-2-17 D r a w i n g No . Enact No. Drawn S AN Y O S e m i c o n d u c t o r

marking date code Sanyo semiconductor

Abstract: TSLP marking date code Sanyo amo package
Contextual Info: M e a s u r e M a s s g Uni t 5 0 / 1 (NTS) 0.0016 mm Q u 1 1 ine drawing *Foi Reference ti :L o t in di cat ion 1 SANYO P a c k a g e Code JEDEC P a c k a g e Code JE ITA P a c k a g e Code T y p e N u m b e r TSLP- D r a w i n g No. E n a c t No. Drawn

kester r256

Abstract: paste profile NB 40 smd transistor kester Re SOLDER PASTE smd transistor marking PA
Contextual Info: P - T S L P - 2 - 1 / P - T S L P - 3 - 1 Recommendations for the Board Assembly Ta rge t T h e t a r g e t of this document is to provide guidelines for our customers to successfully introduce Infineon's leadless packages P-TSLP2-1 / P-TSLP-3-1 into production. This includes recommendations for board pad design, stencil layout, component placement, and soldering process. Generally standard SMT equipment and processes are suitable for

BAS16

Contextual Info: BAS16. Silicon Switching Diode
For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16

Contextual Info: BFS360L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6
Low voltage/ Low current operation 1
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz P-TSLP-6-1 6 T R 1 5 4 T R 2 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BBY52. Silicon Tuning Diodes • Ηigh Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO`s in mobile communications equipment • Pb-free RoHS compliant package BBY52-02L BBY52-02W  Type BBY52-02L BBY52-02W Package TSLP-2-1

free transistor

Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Contextual Info: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package

marking NB transistor

Abstract: top marking 3c sot23 transistor marking 2A H SOT23 package diodes marking 2A marking EA SOT23 transistor marking ND SS MARKING sot23
Contextual Info: P - T S L P - 2 - 1 / P - T S L P - 3 - 1 Infineo n's lead less Pa cka ges P-TS LP-2-1 and TSLP-3 -1 T h e P last i c-T h i n S ma ll Lead l e ss Pa ck a g e with a dimension of 1,0 mm * 0,6 mm is one of the smallest available packages for discrete devices like

33410

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33410 REV A- 10-2011 PARTIAL LISTING ACCEPTS 10 LEAD .5 mm PITCH DEVICES IDS33410 INFINEON TSLP9-1 ON SEMI UDFN10 2.5x1,0.5P WLCSP10, 2.46x0.96 TEXAS INST.

BAS16

Abstract: BAS16-02L
Contextual Info: BAS16-02L Silicon Switching Diode Preliminary data
For high-speed switching application 2 1 Type BAS16-02L Marking A6 Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85 Forward current

BBY52-02L

Abstract: BBY52 BBY52-02W SCD80
Contextual Info: BBY52. Silicon Tuning Diodes
High Q hyperabrupt tuning diode
Designed for low tuning voltage operation
For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless

marking code INFINEON

Contextual Info: BBY52. Silicon Tuning Diodes • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY52-02L BBY52-02W  Type BBY52-02L BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless

bat62-02l

Contextual Info: BAT62-02L Silicon Schottky Diode Preliminary data
Low barrier diode for detectors up to GHz 2 frequencies
Ultra small leadless package 1 1 2 EHA07001 Type BAT62-02L Marking L Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage