EHB00022 Search Results
EHB00022 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
a6s marking
Abstract: A6s sot23 transistor A6S BAS16 bas16ta
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Original |
bas16vps05161eha07002ehb00023+6 | |
BAS16-02W
Abstract: BAS1602W SCD80
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Original |
bas16-02wves05991scd80aug-29-2001+2 | |
BAS16S
Abstract: VPS05604 4C3 diode
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Original |
bas16sot-363vps05604eha07193+5 | |
BAS16TA
Abstract: marking a6s BAS16 A6S SOT23
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Original |
bas16vps05161eha07002ehb00023+5 | |
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Contextual Info: BAS 16W Silicon Switching Diode 3 For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage |
Original |
vso05561eha07002ot-323mar-02-2001+2 | |
Q62702-A1239Contextual Info: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage |
Original |
6-02wves05991q62702-a1239scd-80+2 | |
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Contextual Info: BAS 16-02W Silicon Switching Diode • For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS 16-02W 3 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current |
Original |
6-02wves05991scd-80ehb00025+1 | |
VPS05604Contextual Info: BAS 16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2 |
Original |
ot-363vps05604eha07193eha07291+3 | |
BAS16W
Abstract: VSO05561 marking A6s
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Original |
bas16wvso05561eha07002ot323+4 | |
a1231
Abstract: Q62702-A1231
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Original |
6-03wvps05176q62702-a1231od-323+5 | |
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Contextual Info: BAS 16U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74 |
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vpw09197eha07291sc-74apr-21-1999+2 | |
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Contextual Info: BAS 16-03W Silicon Switching Diode 2 For high-speed switching applications 1 VPS05176 Type Marking Pin Configuration Package BAS 16-03W B 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 Peak reverse voltage VRM 85 |
Original |
6-03wvps05176od-323ehb00023+2 | |
transistor a1241
Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
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Original |
vps05604q62702-a1241ot-363apr-24-1998+6 | |
BAS16-03WContextual Info: BAS16-03W Silicon Switching Diode 2 For high-speed switching applications 1 VPS05176 Type Marking Pin Configuration Package BAS16-03W B 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current |
Original |
bas16-03wvps05176od323jul-02-2ward+3 | |
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Contextual Info: BAS 16 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAS 16 A6s Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM |
Original |
vps05161eha07002ot-23ehb00023+3 | |
BAS16
Abstract: BAS16-02L
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Original |
bas16-02laug-29-2001100nsehn00017+3 | |
VSO05561Contextual Info: BAS 16W Silicon Switching Diode 3 • For high-speed switching applications 2 1 VSO05561 1 3 EHA07002 Type Marking BAS 16W A6s Pin Configuration 1=A 2 = n.c. Package 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage |
Original |
vso05561eha07002ot-323oct-07-1999+2 | |
diode A6s sot 23
Abstract: bas16 marking A6s sot-23 marking TS-5 diode A6s
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Original |
vps05161eha07002ot-23ehb00023+8 | |