BFR19 Search Results

Contextual Info: BFR193T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR193 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

Contextual Info: BFR193F Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant and halogen-free product • Qualification report according to AEC-Q101 available

bcx40

Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30

RCs INFINEON

Contextual Info: BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFR193T

Abstract: SC75 210ts VPS05996
Contextual Info: BFR193T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

sot23 marking zs

Contextual Info: BFR193T / BFR193TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour 3 2 Applications 1 For low-noise, high-gain applications such as power

Contextual Info: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

BFR193TF

Contextual Info: BFR193TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

Contextual Info: BFR193 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

bfr193

Contextual Info: BFR193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Contextual Info: BFR193F NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant and halogen-free (WEEE compliant) product ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Contextual Info: Not for new design, this product will be obsoleted soon BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component

BFR193T

Abstract: BFR193TW
Contextual Info: BFR193T / BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 1 Low noise figure High transition frequency fT = 8 GHz e3 Excellent large-signal behaviour Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

Contextual Info: BFR193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Marking

Contextual Info: BFR193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BFR193

Abstract: 8-72V
Contextual Info: BFR193 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193 Marking

50w transistor

Abstract: BFR193T BFR193TW
Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

Contextual Info: BFR193L3 NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, NFmin = 1 dB at 900 MHz 2 • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available

BFR193TF

Contextual Info: BFR193TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous

BFR193T

Abstract: BFR193TW ZL50
Contextual Info: BFR193T/BFR193TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

BFR106

Abstract: BCW66 BFR194 E6327 BFR194 E6327
Contextual Info: BFR106 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers
For linear broadband amplifiers
Special application: antenna amplifiers
Complementary type: BFR194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.