2SC4841 Search Results

TRANSISTOR 4841

Abstract: 2SC4841 Toshiba transistor a 802
Contextual Info: TO SH IBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB, |S2 ie l 2 = 8.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

TRANSISTOR 4841

Abstract: 2sC4841 821e
Contextual Info: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F =1.8d B , |S2 ie l2 = 8.5dB f=2GHz Unit in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

22-H-1

Abstract: 2SC484 TRANSISTOR 4841 2SC4841 NF 7513
Contextual Info: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = 1.8dB, |S2 iel2 = 8.5dB f = 2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING

2SC4841

Contextual Info: 2SC4841 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4841 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 8.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

3961 G.E

Contextual Info: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. 1.6 ± 0.2 Low Noise Figure, High Gain. 0.8 ±0.1 NF = 1.8dB, |S2i e|2= 8.5dB f=2GHz M A Y IM I IM R A T IM fiÇ ÍT a —

str 6252

Abstract: str w 6252 str 1098 ic
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 U nit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = 1.8dB, |S2ieP = 8.5dB f = 2GHz M A X IM U M RATINGS (Ta = 25°C) B -: CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

Contextual Info: TO SH IB A 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = 1.8d B , |S2lel 2 = 8.5dB f=2GHz U nit in mm M A X IM U M RATINGS (Ta = 25°C) SYMBOL

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

S3 DIODE schottky

Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Contextual Info: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC2499

Abstract: 2sc4200 NPN Transistor TO92 300ma 2sa1161 Schottky Diode SC-62 transistor 2sc2499 1SV252 THS117, THS119 npntr 2sc2705 transistor
Contextual Info: Video Output Transistors for Video Display Terminal ^ P o j a r # y ' \ ^ ^ Package Description VcEO=10V, IcsO.SA fr=3.5GHz Vceo=18V, lc=0.6A fr=2.5GHz V ceo=100V, lc=0.5A D -P A C K TO-92 MOD '— TO-126 IS (Power-Mold) NPN 2SC3613 NPN 2SC4200 Remarks T0-220(NIS)

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

high frequency diode

Abstract: 15536-1 1SS1 "high frequency diode" 2SC4116 A1873 flowchart 2sc3072 TC7S
Contextual Info: 1. Using Device Selection Flowchart 1. Using Device Selection Flowchart 17 1. Using Device Selection Flowchart 1.1 General Purpose Low Frequency Transistor Selection Method Start I S ig n a l Frequency H igh Frequency ~ G H Z Low Frequency (D C ~ S e v e ra l M HZ)

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • Low Noise Figure, High Gain. NF = 1.8dB, |S2leP = 8.5dB f=2GHz -Q M A X IM U M RATIN G S (T a = 25°C) CHARACTERISTIC Collector-Base Voltage

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi