YTS2907A Search Results

ICA10

Abstract: YTS2907A 150fps
Contextual Info: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency

YTS2906A

Abstract: YTS2221 150PPS
Contextual Info: SILICON PNP EPITAXIAL TYPE YTS2907A Unit in mm FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION, + 0.5 MID1UM-SPEED SW ITCHING A N D A U D IO TO VHF AMPLIFIER 2 .5 - a s APPLICATIONS. + Û 25 i.5 ~ a i5 HO +I tfc5 DC Current Gain Specified : —0.1~ —500mA

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D ÌQ'msa • TOSHIBA TRANSISTOR 0017=^7 S « T 0 S 4 - YTS2907A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR HIGH SPEED SWITCHING USE Unit in mm +QS Z 5-Q 3 +<Ï2 S DC TO VHF AMPLIFIER APPLICATIONS AND

YTS2222A

Contextual Info: TOSHIBA YTS2907A Transistor U n it in m m Silicon PNP Epitaxial Type +as Z 5 -a 3 For High-Speed Switching Use +<12 S .1.5-CU5 rtO d ö + I DC to VH F Amplifier Applications and Complementry Circuitry F e a tu re s • High DC Current Gain Specified a - -0.1 - -500mA

YTS2222A

Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

2n 3904 411

Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
Contextual Info: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Contextual Info: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60

TIPI27

Contextual Info: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0

2N3904

Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
Contextual Info: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Contextual Info: TOSHIBA DISCRETE/O PTO TO S H IB A TR A N S IS TO R 45E D • 1 O -]72S0 0G17T12 b «T O S 4 YTS2222A SILICON NPN EPITAXIAL T Y P E (PCT PROCESS) -~J~ 7 Í | _ l S FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO +0.5 2.5-Û3 VHF FREQUENCY APPLICATION

YTS2222A

Abstract: YTS2222 YTS2221
Contextual Info: SILICON NPN EPITAXIAL TYPE YTS2222A FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION. MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATIONS. • • • • DC Current Gain Specified : 0.1~500mA Low Collector-Emitter Saturation Voltage : V cE sat = 1.0V(Max.) @Iq = 500mA, Ig = 50mA