2N236 Search Results

Contextual Info: 2N2369A Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2369AJ

2N2369AU

Contextual Info: 2N2369AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corpoation offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2369AUBJ

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

MSCQ2

Abstract: t 317 transistor
Contextual Info: Microsemi W ntertown, M A 0Î172 PH: S17 S26-0404. F A X <617) #24-1235 2N2369A Features 40 Volts 200mAmps • Meats MIL-S-19500/317 • Iiolector-Sase Voftage 40V • (Jollector Current 200 mA • I-ast Switching 3 0 nS NPN BIPOLAR TRANSISTOR Maximum Ratings

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

Contextual Info: 2N2369A w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE

Contextual Info: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2n2369

Contextual Info: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO

Contextual Info: 2N2368 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 40V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N2369A

Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2369A Features • • • • 40 Volts 200mAmps Meets MIL-S-19500/317 Collector-Base Voltage 40V Collector Current: 200 mA Fast Switching 30 nS NPN BIPOLAR TRANSISTOR Maximum Ratings

C146C

Abstract: 2N2369A 3v912
Contextual Info: 2N2369A MECHANICAL DATA Dimensions in mm inches HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 )

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

Contextual Info: 2N236 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)3.0

2N2369A

Contextual Info: SGS-THOMSON G W i« ! » « ! 2N2369A HIGH-SPEED SATURATED SW ITCH D E S C R IP T IO N The 2N2369A is a silicon planar epitaxial NPN tran­ sistor in JedecTO -18 metal case. It is designed spe­ cifically for high-speed saturated switching applica­ tions at current levels from 100 |iA to 100 mA.

Contextual Info: 2N2360 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.10 h(FE) Max. Current gain.

2N2368

Abstract: 2n2368t
Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N2368 HIGH-FREQUENCY SATURATED SWITCH D ES C R IP T IO N The 2N2368 is a silicon planar epitaxial NPN tran­ sistor in JedecTO -18 metal case. It is designed spe­ cifically for high-speed saturated switching applica­

2N2369A

Abstract: 2N2369AUBC 2N2369AU 2N4449 2N2369AUA 2N2369AUB C545C 317 TRANSISTOR
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC *

Contextual Info: 3QE 3> • 7^237 D0311S1 =1 " 3 S- pô\~ f Z 7 SGS-THOMSON ^ 7# 5 L iÛ T O « ! 2 N2368 S G S-THOMSON HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2368 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed spe­

Contextual Info: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

J 2N2369

Abstract: 2N2369 2N2369A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

Contextual Info: 2N2369A Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2369AJ • JANTX level (2N2369AJX)

2n555

Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Ycbo V Yceo V VCE, V yc.o y VCE, V Min. CURRENT C A IN Hfe Yce @ Ic Max. V A SA TURA TION VOL TA GES y Cf * y SF(|) /c @ y y A A 9j-c aC /W 3 AMP GERMANIUM PNP CA2D2 2N155 2N176 2N235A 2N236A MT-36 TO-3 TO-3

2N2369 equivalent

Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
Contextual Info: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL “@ HIGH-SPEED for SWITCHING @ @ APPLICATIONS e e . Switching Times and Saturation Voltage Specified at Two Current Levels l= at 10 mA and 100 mA ● @ @ Low Input and Output Capacitance CO~= Ci~ = 4 pf matimum