2N400 Search Results

2N4001 diode

Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
Contextual Info: TYPES 2N4000, 2N4001 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS o f TM • 15 W at 100°C Case Temperature £| • Max VcE iai of 0.3 V at 0.5 • Max ton of 300 nsat 0.5 A lc • Min f T of 40 MHz Alc g |

2N4004

Abstract: 2N4005 diode ln 4004 silicon diode 4004
Contextual Info: TYPES 2N4004, 2N4005 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS NO. DL-S 668607, SEPTEMBER • 20 A Rated Collector Current • 40 Watts at 100°C Case Temperature • Maximum V a sat of 1 V at 20 A • Maximum V BE of 1.6 V at 20 A • Maximum ton of 1 /¿s at 10 A

2N3907

Contextual Info: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028

2N4003

Abstract: 2N4002
Contextual Info: General ^ Semiconductor J-JjC - Industries, Inc. 2N4002 2N4003 NPN SILICON POWER TRANSISTORS D IF F U S E D S IL IC O N E P IT A X IA L P A S S IV A T E D T R A N S IS T O R S These NPN devices are designed for use in high power switching and untuned amplifier applications.

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

N4001

Abstract: to-39 TO39 2N3419 BUY80 BUX 34 npn 2a 2N3421 2N4036 2N4037
Contextual Info: PLANAR SWITCHING PLANAR SW ITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked w ith * which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 TO-39 TO-39 TO-39 TO-39 TO-39 2A 3A 5A 7 5A 10A BUY81 BUY92*

2N4001 diode

Abstract: 2N4001 diode 2n4001 Transistor 2N4001 equivalent transistor 2n4001
Contextual Info: 2N4001 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

2N4003

Abstract: 2N4002 N4003 Solidev Semiconductors Solidev 35074H
Contextual Info: Solidev Sem iconductors Silicon Power Transistors Silicon N P N Power Transistors— 30 A m p p h y s ic a l d im e n s io n s REFEREN CE T A B L E C ode Stock No. 2N4002 2N4003 35073X 35074H A B S O L U T E M A X IM U M R A T IN G S 2N4002 2N4003 B V c e o V

2N4001

Abstract: 2n4001 TRANSISTOR Transistor 2N4001
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4001 • Low Power • Hermetic TO-39 Metal package. • Ideally suited for Medium Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N4001

Contextual Info: 2N4001 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)

AD132

Abstract: 2N400 2N2140A ad131 MP2144 germanium AD140
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 2N257G 2N2578 2N1759 NKT450 2N2358 2N2368 2N2553 2N2557 AUY33 2N11838 2N1038 TI367 TI367 TI367A TI367A 2N3159 AD140 AD140 AD140 AD153 ~~~~~ 25 30 2N1359 2N235A 2N399 2N401 2N1184B 2N400 2N236 2N236A

2N40361

Abstract: BUX34 N4001 2N3418 2N4036 2N4037 BFX34 BSV60 BSV64 BUY80
Contextual Info: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39

JANTX2N5109

Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
Contextual Info: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001

2N4007 diode

Abstract: Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number HA7806 HA7808 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 10 ~~~~;~ 2S3021 2S3021 2N2004 2N1228 2N2370 2N2372 2S3221 2Nl027 15 20 ~~~~H 2N862 KT209A KT501A KT501B BCY49 2N1229 2N4007 A5T5221 2N5221 2N995

2N4001 diode

Abstract: 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991
Contextual Info: Device Type VCEO hFE V Min/Max 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N3665 2N3666 2N3766 2N3767 2N4000 2N4001 2N4237 2N4238 2N4239 2N4910 2N4911 2N4912 2N5660 2N5661 2N5662 2N5663 2N5681 2N5682 80 100 80 100 80 100 80 100

Transistor 2N4001

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4001 • Low Power • Hermetic TO-39 Metal package. • Ideally suited for Medium Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER Single, RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

TIP290

Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
Contextual Info: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001

2n2019

Abstract: 2n2018 2N545
Contextual Info: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001

KH 4007

Abstract: 257975,BOSE BOSE NS2N 2N4006
Contextual Info: PREMIUM PERFORMANCE ULTRA LOWrec sat 2N4006 THRU 2N4011 SILICON EPITAXIAL JUNCTION PNP SWITCHING TRANSISTORS GEO M ETRY 292 • • • • rgc (atl 3 Ohms Typical L O W C ,b LOW L EA K A G E HIGH B V e b o ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS: Ta = 25°C (UNLESS OTHERWISE STATED)

Contextual Info: 2N4003K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE Features: * Gate Pretection Diode DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching.

2N4000

Contextual Info: 2N4000 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)

N4003

Abstract: 2n6322 TO63 2N6323 2n6324 2N6325 2N6271 2N6272 2N6273
Contextual Info: Discrete Semiconductors T e x a s In s t r u m e n t s Metal Can Power/High Reliability Professional Types continued Device Polarity Outline Type 2N6272 2N4003 2N6271 2N6273 2N6322 2N6323 2N6324 2N6325 NPN NPN NPN NPN NPN NPN NPN NPN TO-63 TO-63 TO-3 TO-63

2N4007

Abstract: 2N4009 2N4011 2N4010 2N4006 teledyne crystalonics bose 2N4008
Contextual Info: PREMIUM PERFORMANCE U LTR A LOWrec sat 2N4006 THRU 2IM4011 SILICON E PITA X IA L JUNCTION PNP SWITCHING TRANSISTORS GEOMETRY 292, PG. 57 • f£c 3 Ohms Typical • LOW Ceb • LOW LEAKAGE • HIGH B V fbo ELECTRICAL DATA ABSOLUTE M A XIM U M RATING S SYMBOL