02n60
Abstract: JD127
Contextual Info: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.
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b3b7e54120-tiptip125-t1p127b3b72s4+4mjd122mjd12702n60jd127
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5105 GE
Abstract: BD510 Motorola 506 uniwatt BD507 BD505 BD506 transistor f 506 transistor BD 135 BD506-5
Contextual Info: "ib MOTOROLA SC iXSTRS/R F> 6367254 MOTOROLA SC dF | b3b7E54 DGflDtDl 96D CXSTRS/.R F 80601 7 '- J 3 - / 7 BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AUDIO TRANSISTORS PNP SILICON ANNULAR* 20 - 3 0 - 4 0 VO LTS 10 W ATTS TRANSISTORS
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b3b7e54bd505bd507bd509+11bd506bd508bd510bds06bd506-15105 gemotorola 506uniwatttransistor f 506transistor bd 135bd506-5
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B0508
Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
Contextual Info: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS
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b3b7e54bd505bd507bd509+8bd506506-bdb0508transistor f 506506bduniwattbd51080509
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MMBT404A
Contextual Info: ]>F|b3b7E54 MO TO RO LA SC ÍXSTRS/R F> 6367254 M OT O RO L A SC XSTRS/R □ D flEO E? fi 96D 8 2 0 2 7 . F D t M A XIM U M RATINGS *- 37~ 2 3 Value Sym bol 404 404A Unit Collector-Emitter Voltage VCEO 24 35 Vdc Collector-Base Voltage v CBO 25 40 Vdc Emitter-Base Voltage
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b3b7e54mmbt404mmbt404aot-23+1o-236aa/ab
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2N2222A 331
Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800
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b3b7e542n22182n22192n2221+152n22222n2218a2n2219a2n2221a2n2222a2n2222a 3312n2222 -3312n2222a motorola2n2222 -331 transistors2n2222 a 3312n2222 331 transistors2n2222 h 331 transistors2n2222 h 3312n2222 - 3312n2222 331
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2N3792 MOTOROLA
Abstract: 2N3789 2N3791 MOTOROLA 2N3713 MOTOROLA motorola 2n3789 GG04 2n3792 2N3790 MOTOROLA N3790 2N3790+MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | tj3fe.7aSM GGÖMSG1 T | "7 ^ 3 3 -2 3 2N3789. MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N3792 S IL IC O N PNP POW ER T R A N S IS T O R S 10 A M P E R E . . designed for medium-speed switching and amplifier applications. These devices feature:
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2n37892n37922n37902n3791+112n37132n37162n37012n3792 motorola2n3791 motorola2n3713 motorolamotorola 2n3789gg042n3790 motorolan37902n3790+motorola
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MJ16016
Abstract: J160 MJ16014 npn 3778
Contextual Info: I : MOTOROLA SC XSTRS/R F 12E 0 | OGaSEM MOTOROLA T | MJ16014 MJ16016 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 20 A M P E R E NPN SILICON POWER T R A N SISTO R S SW ITCHM ODE III SERIES NPN SILICON POWER TRANSISTORS 4 5 0 V O LT S
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mj16014mj16016mj16014forp-6042+2j160npn 3778
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MRF544
Contextual Info: M OT OR OL A SC XSTRS/R F 4bE D b3h7ES4 GQTMTMM fl « f l O T b MOTOROLA • I SEMICONDUCTOR I TECHNICAL DATA M R F544 M RFC 544 The RF Line NPN Silicon H ig h Frequency T ra n sisto rs |q = 4 0 0 m A . . . d e s ig n e d f o r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h r e s o lu tio n c o lo r v id e o
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mtp2p45
Abstract: TP2P45 45MTP 314B03 HF 1932
Contextual Info: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,
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b3b7254mtp2p5021a-06o-220ab+9y145m221d-02o-220and-02314b03mtp2p45tp2p4545mtphf 1932
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2N4014
Contextual Info: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C
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2n4014o-206aab3b7e54 |
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MJ13080
Abstract: MJ13081 AN-222 DOA107A
Contextual Info: Tb MOTOROLA SC -CXSTRS/R F> f 6 3 8 7 2 5 4 M O J O R O L A SÇ DE |b3t.75SM 000107b 5 96D 8 1 0 7 6 X S T R S / R F D T-33-/3 MOTOROLA MJ13080 MJ13081 SEM ICONDUCTOR TECHNICAL DATA ' " ^ É S D e s i g n e r ’ s 'O ì a t a ^ S h e e t á g f c s s * '-
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p6367254000107b-t-33-/3j13080+5mj13081mj13080mj1308tan-222doa107a
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MTP8N20
Abstract: MTM8N20 221A-06 25CC
Contextual Info: MOTOROLA SC XSTRS/R F bflE ]> • b3b7254 GDTflSbfi ÔÔ7 ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM 8N20 MTP8N20 Designer's Data Sheet P o w e r Field E ffe c t T ran s is to r IM-Channel Enhancem ent-Mode S ilico n Gate T These TMOS Power FETs are designed fo r medium voltage,
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bbb72s4mtm8n20mtp8n20b3b7b54+2221a-0625cc
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TP8N20
Abstract: 8n20 314B03 MTP8N20
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA bflE D • b B b V E S 1! GDTflSbfi ÔÔ7 ■ M O T b ■ SEM ICO NDUCTOR TECHNICAL DATA _ M TM 8N20 M T P 8N 2 0 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is to r IM-Channel Enhancement-Mode Silicon Gate
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21a-06o-220aby145m221d-02+6o-220and-02314b03tp8n208n20mtp8n20
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s2525
Contextual Info: MAXIMUM RATINGS Rating Symbol Value Unit Vdc Collector-Emitter Voltage VCEO 25 Collector-Base Voltage VCBO 25 Vdc Emitter-Base Voltage v EBO 5.0 Vdc Collector Current — Continuous !C 500 mAdc Total Device Dissipation @ T ^ = 25°C Derate above 2 5 T Pd 625
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mps6560mps6562o-226aab3b7e54+201g3bsqs2525
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motorola 6820
Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
Contextual Info: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S
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tw-200trw53001junct10nmotorola 6820+6motorola 7852motorola 8026motorola st 1076trw 77306840 1 motorolaic 8279
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8D438
Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Contextual Info: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary
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b3b7e54bd434bd436bd438+12bd440bd442bd433/435/437/439/4418d4388d4428d436d442sd436transistor bd 437bd transistorbd 35 transistorbd436 motorola
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motorola 2N2270
Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Contextual Info: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.
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h3b7e54007b70e2n28962n3700+162n28952n9562n28972n7182n2221a2n2222aimotorola 2n22702n39472n956 motorolajan 2n2896transistor motorola 2n3053motorola 2n2270 to-18mm3904motorola 2n22192n4028mm6427
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MTP10N15
Abstract: 221A-06 25CC AN569
Contextual Info: MO T O R O L A SC XSTRS/R F bôE D fe3b7254 GG'ifl72ti IT T MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r IU-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed fo r medium voltage, high
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fe3b7254mtp10n15c085-crss221a-06+225ccan569
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NS 8002 1151
Abstract: MQ3251A
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • L,3b7254 00=12431 T ■ M O TbTH VZS MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 DM0 Discrete M ilitary Products PIMP Silicon Dual Quad Sm all-Signal Transistors M D 3251A M D 3251A F (Duals) M H Q 3251A M Q 3251A m in t (Quads)
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3b7254mil-s-19500/323o-116ns 8002 1151+1mq3251a
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marking H3t sot23
Abstract: sot-23 marking 7z H3T TIME UNIT MMBFJ310 MMBT404 MMBT918 MMBT404A MOTOROLA 2N marking LG sot-23 7Z SOT23
Contextual Info: r DE | t , 3 t , 7 S S 4 sc -c x s t r s / r F} 6367254 MOTOROLA SCCXSTRS/R motorola F 96D 8 2 0 1 2 . i D GflED ia D T ^ ï- â 5 M A X IM U M RA TIN G S Symbol Value Unit Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage Vg S 25 Vdc >G 10 mAdc Rating
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0fle03dmmbt918t-31-15marking h3t sot23+8sot-23 marking 7zh3t time unitmmbfj310mmbt404mmbt404amotorola 2nmarking lg sot-237z sot23
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B755
Abstract: MPS911
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO's. Available in a surface-mountable plastic package, as well as the popular TO-226AA TO-92 package. This Motorola series of small-signal
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o-226aaa/500mmbr911lt1mps911+2b3b7e54b755
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d5383
Contextual Info: - 6 3 6 7 2 5 4 MOTOROLA S C X S T R S / R F MOTOROLA D T-33-35 69D 79944 Order this data sheet by MJ50BX120/D t3t7asl< °D7',‘1l" ) 7 T SEMICONDUCTOR TECHNICAL DATA C MJ50BX120 N P N Silico n Pow er Transistor M odule Energy M anagem ent Series DUAL
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t-33-35mj50bx120/dmj50bx120mk145bp+2d5-3833d5383
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Transistor D 799
Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Contextual Info: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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bd795bd797bd799bd801+10b0801bd796transistor d 799transistor bd 522transistor motorola 114-8transistor bd 147motorola s 114-8transistor bd 800transistor k 7991961 30 transistor
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motorola rf device
Abstract: motorola rf Power Transistor vk200-20 MRF224 vk200 VK200 rfc RF POWER TRANSISTOR NPN npn transistor 70 volt RF POWER TRANSISTOR NPN vhf RF POWER TRANSISTOR NPN, motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • Specified 12.5 Volt, 175 MHz Characteristics —
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vk200-20/4b3b7554mrf224b3b7e54+9motorola rf devicemotorola rf power transistorvk200-20vk200vk200 rfcrf power transistor npnnpn transistor 70 voltrf power transistor npn vhfrf power transistor npn, motorola
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