BD506 Search Results

5105 GE

Abstract: BD510 Motorola 506 uniwatt BD507 BD505 BD506 transistor f 506 transistor BD 135 BD506-5
Contextual Info: "ib MOTOROLA SC iXSTRS/R F> 6367254 MOTOROLA SC dF | b3b7E54 DGflDtDl 96D CXSTRS/.R F 80601 7 '- J 3 - / 7 BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AUDIO TRANSISTORS PNP SILICON ANNULAR* 20 - 3 0 - 4 0 VO LTS 10 W ATTS TRANSISTORS

Contextual Info: BD506N-BD506P 50 AMP Block Diodes 特征 BLOCK DIODE FEATURES .大电流承受能力.High current capability .高压利用能力.High voltage available .玻璃被钝化的压模结构.Glass passivated die construction .高浪涌承受能力.High surge current capability

BD506

Abstract: BD509 BD510 10 watt power transistor bd uniwatt transistor bd509 BD505 BD506-1 BD506-5 BD507
Contextual Info: BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PN P SILIC O N A U D IO T R A N S IS T O R S PN P SILIC O N A N N U LA R * 20 - 30 - 40 VOLTS 10 WATTS T R A N S IS T O R S . . designed for complementary symmetry audio circuits • Excellent Current G ain Linearity — 1.0 m A dc to 1.0 A d c

B0508

Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
Contextual Info: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS

Motorola MPSU45

Abstract: b0507 MPSU45 MPS-U10 Motorola MPSU95 MPS-U45 MPS-U06 motorola mpsu05 BD529 MPS-U04
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued CASE 152 STYLE 1: PIN 1. 2. 3. EMITTER BASE COLLECTOR (COLLECTOR CONNECTED TO TAB) Resistive Sw itching HS t, ^s Max Max ts lcCont Amps Max VcEO (sus) Volts Min 0.5 0.8 1 2 Device Type ^FE M in/M ax @ lc Am p

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TY 507

Abstract: 1NA1C BD509 bd507
Contextual Info: motorola Tt -c x s t r s / r sc 6367254 MOTOROLA SÇ_JXSTRS/R F DËTJb3b7ES4 G DflO Sn □ 96D D 80599 T -J J - 07 BD505 BD507 BD509 MOTOROLA •a SEMICONDUCTOR TECHNICAL DATA NPN SILICO N A U D IO T R AN SISTO R S NPN S ILIC O N A N N U LA R E 20 - 30 - 40 VOLTS

BF381

Abstract: MPSU45 BD419 MPSU95 transistor mpsu45 B0415 BF382 BF460 b0507 BF468 MOTOROLA
Contextual Info: M E D IU M PO W ER U N IW A TT T R A N S IS T O R S F o r a p p lic a tio n s re q u irin g h ig h e r p o w e r d is s ip a tio n th a n th a t o f th e sta n d a rd T O - 9 2 p a ck ag e, M o to r o la h a s 'd e v e lo p e d th e U n iw a tt case. In th is p la stic -e n c a p su la te d p ack ag e, w h ic h is slig h tly larger th a n the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.