MPS6562 Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package E BC AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

Contextual Info: S A M S UN G SEMICONDUCTOR INC MPS6562 m g q J 7 cj t . 4 m 2 QQ07330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emltter Voltage: Vc*0 =25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPS6562

Abstract: MPS6560
Contextual Info: MPS6560 NPN MPS6562 PNP SILICON SILICO N A N N ULAR AUDIO TRA N SISTO R S NPN/PNP SILICO N AUDIO TRA N SISTO R S . designed for complementary symmetry audio output applications. Excellent Gain Linearity — From 10 m Adc to 100 m Adc Low Collector-Emitter Saturation Voltage —

MPS6560

Abstract: MPS6562
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package E BC AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

MPS6560

Abstract: MPS6563 MPS6562 MPS6565 TA425 MPS 6561 MPS-6565
Contextual Info: MPS 6561 • MPS 6563 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656O, MPS656I NFN AND MPS6562, MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

CBVK741B019

Abstract: F63TNR MPS6562 PN2222N TN4033A
Contextual Info: MPS6562 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: PNP Transistors National f i seniconäuc, or- V V Device No. Case Style MPS855 CBO V CEO EBO Discrete POWER & Signal Technologies PNP Medium Power 'cB O V V CE SAT V BE(SAT) h FE (V) Min (V) Min (V) Min TO-92 (92) 40 25 6 MPS6562 TO-92 (92) 25 25 5 100 20

MPS6562

Abstract: TN4033A
Contextual Info: MPS6562 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS6563

Contextual Info: MPS 6560 • MPS 6562 MPS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656 O, MPS 656 I NFN AND MPS6562 , MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

Contextual Info: S E M IC O N D U C T O R MPS6562 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN 4033A for characteristics. AbSOlUtG Maximum RâtinÇjS

MPS6562

Abstract: TN4033A
Contextual Info: SEMiCONDUCTQR MPS6562 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

Contextual Info: J R C H D iscrete POWER & S ig n a l Technologies I ^ SEMICONDUCTOR MPS6562 . ;^C* C< \ TO-92 Be PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced

MPS6562

Abstract: MPS855 MPSA55 MPSA56 PN4355 PN4356 TN4033A TN5322A
Contextual Info: This PNP Transistors Material . /% Discrete POW ER & Signal Technologies National I* P N P Copyrighted VCBO VCEO ^EBO ’cBO V < nA @ ^ V) (V) (V) Min Min Min Max ' ' Device No. Case Style MPS855 TO-92 (92) 40 MPS6562 TO-92 (92) 25 25 5 100 20 50 50 35 PN4355

audio transistor

Abstract: MPS6560 MPS6562
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6562 mg q | 7 cj t . 4 m 2 0007330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emitter Voltage: Vc*o=25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPS6562

Abstract: MPS6563 MPS6560 MPS6565 TA425 T0-92A
Contextual Info: *V MPS 6560 - MPS 6562 M PS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS6560, MPS656I NFN AND MPS6562, MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPS8093

Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO

Contextual Info: I Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LÈAD CODE v CBO v CBO v CEO v EBO 'CBO (V) (V) (V) a v CE @ <c h F:E (V) (V) *CES (mA) VC E (S /IT) 'C (V) (mA) *hfe(1kHZ) MIN *VCES MIN MIN *ICEV MIN MAX Cob (pF) *C ,b MAX h NF

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

TO92A

Abstract: TO-92a MPS4355 MPS6591 MPSD05 MPS9647 MPS9468 MPS3702 MPS3703 MPS3705
Contextual Info: T Y PE NO. P O L A R IT Y Medium Power Amplifiers and Switches M A X IM U M R A T IN G S CASE P d ImtVI •c A H FE V C E (S A T ) V CEO (V ) min m ax 'c (m A) V CE (V) max f T min Cob COM PLE­ max M ENTARY (MHz) (pF) TYPE 0.05 0.05 0.1 0.1 0.1 100 100

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

MPS6591

Abstract: MPS-8000 mps9418 MPS4355
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. PO LA ­ CASE RITY M A X IM U M RA TING S VcEO Pd Ic ^CER * mW (V) (A) H FE VcE(sat) min max Ic V ce max Ic (mA) (V) (V) (A) fr Cob min max (M H z) (M H z) C O M PL E ­ M EN TAR Y TYPE MPS4354 MPS4355 MPS4356