MPS6591
Abstract: MPS-8000 mps9418 MPS4355
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. PO LA CASE RITY M A X IM U M RA TING S VcEO Pd Ic ^CER * mW (V) (A) H FE VcE(sat) min max Ic V ce max Ic (mA) (V) (V) (A) fr Cob min max (M H z) (M H z) C O M PL E M EN TAR Y TYPE MPS4354 MPS4355 MPS4356
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TO92-EBC
Abstract: mpsd54
Contextual Info: ROHM CO LTD llD E D VflEâ'm D0032Ô3 7 IRHM transistors 7 = 3 /-/T T-27-29 Medium Power Amplifiers Type RN5815 RN5817 RN5819 Package Fig-1 TO-92 (EBC) TO-92 (EBC) TO-92 (EBC) BVcbo BVceo BVebo Min, Min. Min. . 50V 50V 50V MPS4354 TO-92 (EBC) 60V MPS4355
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DG01D
Abstract: 82360 2SD1225
Contextual Info: ROHM COR? “ " TöD D | Medium Power Amplifiers b Vcbo Package Type Min. • PNP Transistors BVce O BVebo 'ÇBO @ V0B Min. Min. Max. RN5819 TO-92 EBC TO-92 (EBC) TO-92 (EBC) MPS4354 TO-92 (EBC) 60V 60V 5V 50nA 50V MPS4355 TO-92 (EBC) 60V 60V 5V 50nA 50V
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dg01d7et-27-01100mhz120mhz+8135mhzrn5815rn5817rn5819100nadg01d823602sd1225
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MPS4355
Abstract: MPS4356 MPS4354 MPS43 X10-6 MPS-43
Contextual Info: MPS4354 silicon MPS4355 MPS4356 PNP SILICON ANNULAR PNP SILICON SWITCHING AND AMPLIFIER TRANSISTORS TRANSISTORS . designed fo r low -level, lo w -n o ise a m p lifie r and h ig h -cu rre nt s w itch in g a p p lica tio n s. H igh B re a k d o w n V o lta g e s —
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2N4355
Abstract: 2n4356 2N4354 MPS4355 MPS4354 2N4355+equivalent MPS4355 transistor MPS4356 T0-105 60-80V
Contextual Info: MPS4354 MPS4355 MPS4356 2N4351» 2N4355 2N4356 certtfifi Sem iconductor Corp. Central sem iconductor Corp. ♦I JEDEC T O - 1 0 5 JEDEC T0-92 EBC SILICON PNP TRANSISTORS 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N^35Z*, MPS4354 series types are Silicon PNP Small Signal T ra n s
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MPS8093
Abstract: mps404
Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D • GS0M33Ô 00035^7 7 ■ ALGR 93D 03597 2 S E M I C O N D S / ICS T'Ql'Qb ' PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain ^CBO
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gs0m33mps404mps404amps3638+7mps3638amps3702mps3703mps4248mps4249mps4250mps8093
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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TO92A
Abstract: TO-92a MPS4355 MPS6591 MPSD05 MPS9647 MPS9468 MPS3702 MPS3703 MPS3705
Contextual Info: T Y PE NO. P O L A R IT Y Medium Power Amplifiers and Switches M A X IM U M R A T IN G S CASE P d ImtVI •c A H FE V C E (S A T ) V CEO (V ) min m ax 'c (m A) V CE (V) max f T min Cob COM PLE max M ENTARY (MHz) (pF) TYPE 0.05 0.05 0.1 0.1 0.1 100 100
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100ria
Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V
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ksd113
Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Contextual Info: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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MPS-004
Abstract: MPS004 2N4125 EBC 2n3704
Contextual Info: T ransistors TO-92 JEDEC Standards Numbers #NPN Transistors General purpose small signal amplifiers Part No. Package BVcbo Min. BVceo Min. BVebo Min. iCBO Max. @VCB Min. Max. @lc & Vce V ce (sat) Max. 4 Vbe (sat) Max. @lc Cob Max. Min. 10pF 180MHz fr @ Ic
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BSY90
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. BSX48 BSX95 BSX96 BSX97 BSY44 POLA CASE RITY N N TO-18 TO-39 TO-39 10-18 TO-39 N N N 1000D 800 800 400 800 0.6 0.5 0.5 0.5 1 25 30 30 25 50 H,PE Ic min max 17 40 100 40 40 120 300 120 mA VCE (V) 100 150 150
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mps9418
Abstract: MPS94 CL055 CL055P CL066 CL066P CL155 CL155P CL166 CL166P
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA NO. RITY CASE Pd IC VCE sat HFE MAXIMUM RATINGS (A) (V) min max Cob COMPLE VCE max min max MENTARY (mA) (V) (V) (A) (MHz) (pF) TYPE IC VCEO (mW) n CL055 CL055P CL066 CL066P P P N N TO-92A TO-237A TO-92A TO-237A
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Po (W) J 1 Type Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min CSB1426P 20 20 5 0.75 3 0.1 CSB1426Q 20 20 5 0.75 3 CSB1426R 20 20 5 0.75 MPS751
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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csa970a
Abstract: MPS3645 CSA643G CSA643R CSA643Y CSA708 CSA708G CSA708R CSA708Y CSA970
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristic* (Ta=25'C, Unless Otherwise Spe(:ified) Maximum Ratings Type No. ^CBO ^CEO ^EBO M (V) (V) Min Min ^0 m (A) Tc=25°c Min 'cBO ^CB 'ces ^ce (|1A) @ (V) (MA) @(V) Max Max >Ve Min ® >0 & (mA)
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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2N4355
Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233
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2M5087
Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
Contextual Info: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.
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