MPS3645 Search Results

Contextual Info: MPS3645 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)35nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2N3904

Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30

ZTX502

Abstract: BC17 MPS3645 BCY59P MPS3693 MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type M P S 3704 \ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 M P S 3706 \ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P M P S 3709 \ ZTX3709 / M P S 371 0\ ZTX3710 /

BC25SB

Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL

945 MOTHERBOARD CIRCUIT diagram

Abstract: MPS3645 transistor ZTX302 ZTX3711
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type M P S 3704 \ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 M P S 3706 \ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P M P S 3709 \ ZTX3709 / M P S 371 0\ ZTX3710 /

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

Contextual Info: TO-92 Plastic Package Transistors PNP Maximum Ratings Po (W) J 1 Type Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min CSB1426P 20 20 5 0.75 3 0.1 CSB1426Q 20 20 5 0.75 3 CSB1426R 20 20 5 0.75 MPS751

csa970a

Abstract: MPS3645 CSA643G CSA643R CSA643Y CSA708 CSA708G CSA708R CSA708Y CSA970
Contextual Info: TO-92 Plastic Package Transistors PNP Electrical Characteristic* (Ta=25'C, Unless Otherwise Spe(:ified) Maximum Ratings Type No. ^CBO ^CEO ^EBO M (V) (V) Min Min ^0 m (A) Tc=25°c Min 'cBO ^CB 'ces ^ce (|1A) @ (V) (MA) @(V) Max Max >Ve Min ® >0 & (mA)

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

MPS3693

Abstract: MPS3645 MPS6566 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238 ZTX303
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type M P S 3704 \ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 M P S 3706 \ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P M P S 3709 \ ZTX3709 / M P S 371 0\ ZTX3710 /

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

CSA708Y

Contextual Info: TO-92 Plastic Package Transistors PNP E lectrical C haracteristic* (Ta=25°C, U nless O therw ise Specified) M axim um Ratings Type No. P» ^CBO ^CEO ^EBO (W) M (A) (V) (V) Min @Tc=25°c Min Min 'CBO ^CB (UA) 0 (V ) Max ^CES Vce (MA) (V) Max >Ve Min @

MPS3645

Abstract: MPS3644 CSA643G CSA643R CSA643Y CSA708 CSA708G CSA708R CSA708Y CSA970
Contextual Info: Electrical Characteristic* Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. CflO 'C E O ^EBO (V) Min (V) Min (V) Min 20 CSA643G 20 C SA6430 Pd (W) @Tc=25°c ’c es m « (v ) Max 0.1 0.5 0.1 0.5 ^ce (pA) (V) Max hFE Min 200 25 9 'c & (mA)

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

2N3702 NATIONAL SEMICONDUCTOR

Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
Contextual Info: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60

CD423

Abstract: SA1015 2NS400 PN544 T1S91 BC309C BC212
Contextual Info: Maximum Ratings Type No. V CSO V Min VC60 (V) Electrical Characteristica (Ta=25'C, Unlesa Othacwise Spccified) £60 Pd (W) (V) (A) Mm 8Tc=25°! 2N3702 0.625 2N3905 0.625 2N3906 hFE e 'cao vce tes VCE (pA) 0 (V) (liA) #(V) Max Max Min 0.1 60 20 *0.05 0.625 0.2

MPS3645

Abstract: MPS3644 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907A ZTX4403
Contextual Info: PNP SWITCHING T A BLE 4 - P N P SILIC O N PLA N A R S W IT C H IN G T R A N S IS T O R S The transistors in this table are characterised for general medium/high speed switching applications and they may also be used in other application areas. The devices are listed in order of decreasing collector/emitter breakdown voltage VCE0 ,

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40