MPS855 Search Results

MPS8550

Contextual Info: MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: B iy C P N D U C T g R n.i MPS8550 PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Rdtinys T A = 2 5 ° C unless o th e rw ise noted

MPS8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8050. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V VEBO -6 V Collector Current

Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8050. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO

MPS8550

Abstract: MPS8050
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MPS8550 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8050. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage VCEO

CBVK741B019

Abstract: F63TNR MPS8550 PN2222N
Contextual Info: MPS8550 MPS8550 C B TO-92 E PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

mps8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8550. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V VEBO 6 V Collector Current

mps8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8550. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V H

Contextual Info: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE 2009. 6. 10 Revision No : 2 1/2

Contextual Info: PNP Transistors National f i seniconäuc, or- V V Device No. Case Style MPS855 CBO V CEO EBO Discrete POWER & Signal Technologies PNP Medium Power 'cB O V V CE SAT V BE(SAT) h FE (V) Min (V) Min (V) Min TO-92 (92) 40 25 6 MPS6562 TO-92 (92) 25 25 5 100 20

MPS8550

Abstract: I400 E100
Contextual Info: Semi conduct or MPS8550 D iscrete P O W E R & S ig n a l Technologies National MPS8550 PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at coilector currents to 500 mA. Sourced from Process 60. Absolute Maximum RstinCJS*

Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B FEATURE C A ・Complementary to MPS8050. N K MAXIMUM RATING Ta=25℃ E G RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage

MPS8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8050. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V

k MPS 8550 D

Abstract: K 8550 MPS 8550 B kmps8550 k MPS 8550 8550B MPS 8550 C MPS 8550 D KEC 8550 DSA0010574
Contextual Info: SEMICONDUCTOR MPS8550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8550 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8550 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.

Contextual Info: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L D L ・Complementary to MPS8550S. H MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage

MPS8550

Abstract: MPS8550c
Contextual Info: MPS8550 MPS8550 C B TO-92 E PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS8550

Contextual Info: MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: D iscrete POWER & Signal Technologies 1R O H I 1ILtQI ^ M IC W J C R J C T D P i m MPS8550 C TO-92 BE PNP General Purpose Amplifier T his device is designed for general purpose audio am plifier appli cations at collector currents to 500 mA. Sourced from Process 60.

Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE 2010. 6. 10 Revision No : 3 1/2

MPS8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8550. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Em itter-B ase Voltage

MPS8550S

Abstract: MPS8050S
Contextual Info: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L L D ・Complementary to MPS8050S. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage

Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8550. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO

MPS8550

Abstract: pnp general purpose amplifier
Contextual Info: N MPS8550 C TO-92 BE PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

MPS6562

Abstract: MPS855 MPSA55 MPSA56 PN4355 PN4356 TN4033A TN5322A
Contextual Info: This PNP Transistors Material . /% Discrete POW ER & Signal Technologies National I* P N P Copyrighted VCBO VCEO ^EBO ’cBO V < nA @ ^ V) (V) (V) Min Min Min Max ' ' Device No. Case Style MPS855 TO-92 (92) 40 MPS6562 TO-92 (92) 25 25 5 100 20 50 50 35 PN4355