I400 Search Results

Contextual Info: Preliminary information •■ AS29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations

Contextual Info: P § > -aSUUUU— -« u j u u - -« n n n r^ - (P 2 . -n nmn- ELECTRICAL SPECIFICATIONS: NDTEi PINS NDT ELECTRICALLY CONNECTED ARE OMITTED, OPERATING TEMPERATURE RANGE: — 40"C TO + 8 5 'C 1.0 INDUCTANCE: 65 uH TYP @.01V, 10KHz 2 .0 DC RESISTANCE: P 6 - J 6

C5611 Transistor

Abstract: transistor c5578 M96639 7809a C5611 c5578 C5701 C5562 27611A C5762
Contextual Info: RoHS Compliance – Complete Listing As of Monday, April 28, 2008 10:22 AM The compliance date shown indicates the date Belden’s internal specifications were changed. Material manufactured prior to the compliance date may still be in stock at Belden facilities and in our

schematic diagram of AM1850S

Abstract: HALF ADDER motorola mca ECL IC NAND
Contextual Info: Ami 850 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS 00 Large macrocell library containing over 150 functions - Supported on major CAE workstations - Superset of MCA-1 Advanced oxide isolated bipolar LSI process technology

siemens 230 96 O

Abstract: B82442-A1103-K B82442-A1472-k simid 2521NH B82442-A1223-K A1823
Contextual Info: HF-Drosseln RF Chokes smp Baugröße 2220 Size 2220 Baureihe SIMID 05 SIMID 05 series s: Kernmaterial: Ferrit :s Sieben von Versorgungsspannun­ gen bei hohen Strömen :s Core material: ferrite :;: Filtering of supply voltages at high currents Maße mm Dimensions (mm) I x b x h

S555B

Abstract: .5555b 29F002B FLASH MEMORY 29F 29F002T S29F002T-90PC S-555B
Contextual Info: Preliminary information Features • O rganization: 2 5 6 K x 8 • Sector architecture - O ne 16K; tw o 8K; one 32K; an d three 64K byte sectors - Boot code sector architecture— T top o r B (bottom ) - Erase any com bination o f sectors o r full chip

FX3U-48M

Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
Contextual Info: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)

ki400a

Abstract: K1400A 2SK1400 2SK1400A K1400 lo205
Contextual Info: HITACHI 2SK1400,2SK1400A 4.8 Max SILIC O N N -CHANN EL M O S FET 1 5 Max HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current 1, Gute • No Secondary Breakdown 0.5 2 D ra in I. FUngt 3. Source { Dimension» in i

cf325

Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8

R9810

Abstract: HT 1200-4 smd r9824 HT 1200-4 c6011 L9707 L5800 c9611 C3150 ic c2335
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 B 1 2 3 4 6 7 8 9 10 11 13* 14 16 17 18 21* 22

74s405

Abstract: Katalog CEMI 74s426 74s416 schema Lcd monitor dell 74S428 Zapi H1 sk 8085 UCY74S426 UCY74549
Contextual Info: NAUKOWO-P RODUKCYJNE CENTRUM PÓIPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç i é IV UNIPOLARNE U KLAD Y SCALONE I U KLAD Y SYSTEMU MIKROPROCESOROWEGO Warszawa 1983 r. S P IS TRESCI Str. Od W /d aw cy .

50-3I5XX42R

Contextual Info: DRAWING No.: M 50-3I5XX42R I— Customer Information Sheet I SHEET 3 OF 4 I .75 12.00 TYP — s- 2.00 TYP 4.00 TYP -3 0 I.5 0 + •10 TYP IF IN DOUBT - ASK I .75 | C | NOT TO SCALE | THIRD ANGLE PROJECTION -12.00 T Y P — ^ 2.00 TYP i 4.00 TYP | ALL DIMENSIONS IN mm

FEC40-24T0512

Abstract: FEC40-24S05 FEC40 EN61000 Nippon capacitors 0026a
Contextual Info: • OFFER SINGLE, DUAL TOTAL OUTPUT CURRENT 8A AND TRIPLE OUTPUT • 40 WATTS MAXIMUM OUTPUT POWER • 2:1 WIDE INPUT VOLTAGE RANGE • INTERNATIONAL SAFETY STANDARD APPROVAL • SIX-SIDED CONTINUOUS SHIELD • HIGH EFFICIENCY UP TO 90% • STANDARD 2” x 2” x 0.4” PACKAGE

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

MB3783

Abstract: MB86373B MB87L2250 fujitsu FR-V mb86390 MB377 CZ-182 dvb-c demodulator MB3773 mb87l2070
Contextual Info: T H E New Products Online P O S S I B I L I T I E S Contact Help A R E I N F I N I T E Exit Product Directory + MPEG2 Decoder Multimedia + MPEG2 Encoder + DVB Demodulators + IEEE1394 + ADSL + ATM + Ethernet + Audio Decoder + Graphic Controller + FLASH Presentation

NL-4823

Abstract: semelec CHEROKEE INTERNATIONAL sunbank corp pr ste 1205 G Samsung Praha SRI Rev 1_0
Contextual Info: Fairchild Semiconductor World Wide Sales Offices AMERICAS MEXICO Fairchild Semiconductor Av. Vallarta #6503 Flr. 14 Col. Cd Granjas Zapopan Jalisco 45010 Mexico Tel: 52-3-1100017 Fax: 52-3-1101878 TEXAS Customer Response Center Fairchild Semiconductor 222 West Las Colinas Blvd., Ste. 380

sms reading using pic

Abstract: P1C14000 PIC14000
Contextual Info: & PIC14000 A /1 i r o n r u i D EPROM Memory Programming Specification Pin Diagram This document includes the programming specifications for the following devices: PDIP, SOIC, SSOP, Windowed CERDIP • PIC14000 _►C . 1 - ► C 2 RA1/AN1 1.0 RACVAN0 PROGRAMMING THE PIC14000

Contextual Info: 10 13 .100 2.5 4 ’ - CIRCUIT *1 .016 • CIRCUIT *2 0.41 = R MAX TYP 4 CKT tt1 REF LOCATIONRECOMMENDED PANEL CUTOUT (SEE NOTE «7 & * 8 ) J4 ~ l~ l 3.6 NOTES: 1. MATERIAL: UNFILLED POLYESTER (PBT), U L94V -0, COLOR: BLACK CKT S IZE M ATERIAL NUMBER 4 4 3 0 0 -0 4 0 0

AS8510

Contextual Info: AS8510 D a t a A cq u is i t io n D ev ic e f o r B a t t e r y S e n s o r s 1 General Description Option for multiplexing either one differential input, or two single The AS8510 is a virtually offset free, low noise, two channel measurement device. It is tailored to accurately measure battery

Anzac Electronics

Abstract: str 6658 data book electronique TRANSISTOR c 5578 B C 4927 MMD nissei D-70794 "16-Bit Microcomputers" c 5578 THESYS
Contextual Info: 23-013K JULY 1995 HITACHI EUROPE Electronic Components Group EUROPEAN SALES LOCATIONS HITACHI EUROPE ELECTRONIC COMPONENTS GROUP PRODUCT RANGE 4-, 8-, 16-Bit Microcomputers Microprocessor - Peripherals 32-Bit Microprocessors Smart Card ICs Display Controller/Driver

8T01-2

Abstract: GS-R405S
Contextual Info: =T SGS-1H0MS0N /#» H[« omi(gM »0(gS_ GS-R400 FAMILY 20W TO 140W STEP-DOWN SWITCHING REGULATOR FAMILY rURES BF in excess of 200,000 hours max output current / max input voltage max drop-out voltage t start note logic inhibit/enable note output voltage sense

40038

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 T U RN S RATIO: P 6 - P 5 - P 4 (P 3 -P 2 -P 1 : (J6 -J3 : (J2 -J1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 4 (P 3 -P 1

Contextual Info: AS8515 D a t a A cq u is i t io n S y st e m w i t h P o w e r M a n a g em en t and L IN Tr an sc e iv er for 12V Battery Sensor Applications 1 General Description The AS8515 is designed for simultaneous measurement of shunt current sensor signal and battery voltage by two independent ADC

transistor D1843

Abstract: D1843 d1859 transistor transistor d1913 transistor D1710 D1875 D1835 transistor d1941 d1941 transistor D1853 transistor
Contextual Info: DVP-PM APPLICATION MANUAL Table of Contents Chapter 1: Program Structure of DVP-PM 1.1 O100 Main Program . 1-1 1.1.1 Manual Motion in O100 Main Program . 1-2