MPS656 Search Results

2n2222 to-92

Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Contextual Info: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package E BC AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

Contextual Info: S A M S UN G SEMICONDUCTOR INC MPS6562 m g q J 7 cj t . 4 m 2 QQ07330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emltter Voltage: Vc*0 =25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPS6560 TRANSISTOR NPN 1.EMITTER FEATURES z General Purpose Amplifier Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

MPS6568A

Abstract: VHF Transistors 6570A MPS6569A MPS6568
Contextual Info: MO T OR OL A SC 12E D I XSTRS/R F L3b?2S4 OOflblOa s I MPS6568A “ 1T-3MJ thru M A X I M U M R A T IN G S Rating Sym bol Value Unit VCEO 20 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage vebo Collector-Emitter Voltage 3.0 Vdc Collector Current — Continuous

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

transistor f 948

Abstract: MPS6567 transistor a 949 u407
Contextual Info: MPS6567 SILICON NPN SILICON AMPLIFIER/MIXER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for use in high-frequency am plifier and m ixer ap­ plications. • High Collector-Em itter Breakdown Voltage — B V c E O = 40 V dc (Min) @ 1q = 1.0 mAdc

MPS6562

Abstract: MPS6560
Contextual Info: MPS6560 NPN MPS6562 PNP SILICON SILICO N A N N ULAR AUDIO TRA N SISTO R S NPN/PNP SILICO N AUDIO TRA N SISTO R S . designed for complementary symmetry audio output applications. Excellent Gain Linearity — From 10 m Adc to 100 m Adc Low Collector-Emitter Saturation Voltage —

MPS6560

Abstract: MPS6562
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPN MPS6562 PNP TO-92 Plastic Package E BC AudioTransistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

MPS6560

Contextual Info: ON Semiconductort MPS6560 Audio Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C

MPS6560

Abstract: MPS6563 MPS6562 MPS6565 TA425 MPS 6561 MPS-6565
Contextual Info: MPS 6561 • MPS 6563 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656O, MPS656I NFN AND MPS6562, MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

CBVK741B019

Abstract: F63TNR MPS6562 PN2222N TN4033A
Contextual Info: MPS6562 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS6560

Abstract: audio transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC D MPS6560 J 7Tbm4£ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR AUDIO TRANSISTOR • Collector-Emitter Voltage: V CEo = 2 5 V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM J W IN G S (Ta=25°C) Characteristic Collector-Base Vbltage

Contextual Info: PNP Transistors National f i seniconäuc, or- V V Device No. Case Style MPS855 CBO V CEO EBO Discrete POWER & Signal Technologies PNP Medium Power 'cB O V V CE SAT V BE(SAT) h FE (V) Min (V) Min (V) Min TO-92 (92) 40 25 6 MPS6562 TO-92 (92) 25 25 5 100 20

MPS6563

Abstract: MPS6561 PS6563
Contextual Info: MPS6561, MPS6563 continued E L E C T R IC A L C H A R A C T E R IS T IC S ( T / k = 2 5 ° C u n le ss o th e rw is e n o te d .) C h a r a c t e r is t ic M ax Sym b o l M in U n it V cE O (su s) 20 - Vdc B V CßO 20 - Vdc b v eb o 5 .0 - Vdc lCEO - 100

MPS6562

Abstract: TN4033A
Contextual Info: MPS6562 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS6563

Contextual Info: MPS 6560 • MPS 6562 MPS 6561 - MPS 6563 COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656 O, MPS 656 I NFN AND MPS6562 , MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO

Contextual Info: S E M IC O N D U C T O R MPS6562 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN 4033A for characteristics. AbSOlUtG Maximum RâtinÇjS

MPS6562

Abstract: TN4033A
Contextual Info: SEMiCONDUCTQR MPS6562 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

Contextual Info: MPS6565K Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

MPS6561

Abstract: MPS6563 npn 940 0055 n
Contextual Info: MPS6561 NPN SILICON MPS6563 PNP SILICON ANNULAR AUDIO TRANSISTORS NPN/PNP SILICON AUDIO TRANSISTORS .designed fo r co m ple m e n tary sym m e try audio o u tp u t applications. Exce lle nt G ain Line arity — F ro m 10 m A d c ito 100 m A d c L o w C olle cto r-E m itte r Saturatio n V oltage v<*c W a x l @ l c = 3 5 0 m A d c

Contextual Info: J R C H D iscrete POWER & S ig n a l Technologies I ^ SEMICONDUCTOR MPS6562 . ;^C* C< \ TO-92 Be PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Audio Transistor MPS6560 NPN Silicon COLLECTOR 3 1 EMITTER M A X IM U M R A T IN G S Unit Symbol Value C ollector-Em itter Voltage v CEO 25 Vdc C ollector-B ase Voltage v CBO 25 Vdc E m itter-Base Voltage Rating vebo 5.0

MPS6566

Abstract: MPS6565 MPS-6565 IC 3180
Contextual Info: MPS6565 SILICON MPS6566 NPN SILIC O N A N N U LA R T RA N SISTO R S NPN SILICO N A M P LIF IER T RA N SISTO R S . . . designed for low -current am plifier applications. • C oH e ctor-E m itte r Bre a kd ow n V oltage — • O u t p u t Capacitance —