300LIS Search Results

2N2193

Abstract: Q32J
Contextual Info: >S '«S \ S. r-' * * " S/^ > " \ 2N2193 f •* NPN iwi «Í.A SILICON \<VS ;>:"!^- ’S! fef •$ V iv f«Wr.* *^* t í - ¡S ' ,TV -\ ^ v x v y - ^ •>}* TRANSISTOR ¿í.>VÍ¿s'ÍiJ,rf.r TO-39 2N2193 is NPN silicon planar transistor designed for medium power switching and

Contextual Info: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis­

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - OCTOBER 1995 BC868 | m O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 -SEPTEMBER 1995 O PARTMARKING DETAIL— SP ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT -50 V mA mA Continuous Drain Current •d -130 Pulsed Drain Current

2SC2522

Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er