2N2538 Search Results

2N3409

Abstract: 2N2538 2N2539 2N3303 2N3723 2N27S 2N3426 2N4873 2N3444 2N2501
Contextual Info: 8134693 40 S E M I CO A HIGH SPEED LOGIC SW ITCHES C ont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW VCB

2SC1675L

Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

Contextual Info: 40 81 34 693 SEMICOA DE | 0134^3 00 D01 3S M HIGH SPEE D LOGIC SW ITCHES C e n t’d Maximum Ratings Type NPN PNP 2N3059 2N5187 2N706B/46 2N2894 2N3011 2N3261 2N4873 2N2501 2N3508 2N3829 2N703 2N560 2N2538 2N2539 2N2540 2N2787 PD Ambient mW Electrical Characteristics @ 25°C

2sc1675l

Abstract: 2SC105 BF235 LOW-POWER SILICON NPN TL3643 2N5028 250m TO-226-AA MPS2222M BFX97A
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

2N2464

Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
Contextual Info: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40

2N2537

Abstract: 2n2540 2N2537 texas 2M253 2N2538 2n2539
Contextual Info: TYPES 2N2537 THRU 2N2540 N-P-N SILICON TRANSISTORS B U L L E T IN NO . D L -S 6 9 4 1 3 0 , A U G U S T 1 9 6 3 -R E V IS E D J A N U A R Y 1969 D ESIG N ED FOR MEDIUM-POWER SWITCHING AND G EN ERA L PURPOSE A M P LIF IER APPLICATIONS • Total Switching Time . 80 nsec max at 150 ma

2N2458

Abstract: TRF648 sgs-ates transistors FBase-F Package 2N2425 2N2455 westcode diode 2n2534 2n2474 2N2431
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 55 Ie Max (A) Westcode Westcode MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec MarconiElec Marcomclec MarconiElec MarconiElec MarconiElec MarconiElec

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

2n3252

Abstract: 2N5859 transistor 2N5859 2N3725 MOTOROLA 2n3736 2N3724 2N5845 2n3444 SILICON SMALL-SIGNAL DICE 2n5861
Contextual Info: M O T O R O L A SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DE | b3t,7SSS □ □ B 7 T ö ci T f DIO DES/O PTO 34C D 37989 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C3724 DIE NO. — NPN LINE SOURCE — DSL27 D Ol This die provides performance similar to that of the following device types:

BF225

Abstract: 2n3984 2N2539 TI-407 2N4255 N4254 TI407 TIS37 2N2538 2N4254
Contextual Info: Silicon Transistors Case Type No. c^ o T' Maximum Ratings at 25°C amb. C haracteristics SPEC IAL FEATURES 11 = 1“ o CJ ,-V CB V V Ce V V EB V •c A Ptot W !c mA hpE h A - 1 r- *- •, Min. Max. Min. ■c mA M c/s ^CE SAT

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK