2N458A Search Results

Contextual Info: su ^£.mi-dond\jictoi Lptoauoli, Una. LS 2N458A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP GERMANIUM POWER TRANSISTOR JEDEC TO-3 CASE 2N458A type is a PNP Germanium Alloy Junction Power Transistor manufacture

N511A

Abstract: 2N458 2N5156 2N1160 2N4243 2N1021A 2N458A Germanium power 2N1147
Contextual Info: germanium power transistors 149 See Pg. 147 for outline dra!Ni~g_ ~ ._ .~~ . _ . I • PNP ALLOY TRANSISTORS S.O Amp I BREAKDOWN VOLTAGES I I I I TYPE NUMBER VCB 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N1021 2N1021A 2N1022 2N1022A

2N3614

Abstract: 2N3612 2N4588 2N2869 2N3613 2N3618 DA3f3 2n174 2N3611 PNP Germanium 2N2291
Contextual Info: 53 GERMANIUM POWER TRANSISTORS CURREIV IT G A IN T Y PE N U M BER C A SE T YPE V CBO V V CEO V 7 AM F» G E R M A N U JM V EBO V PN 3 2N457A TO-3 2N457B TO-3 2N458 TO-3 60 60 80 30 2N458A TO-3 2N458B TO-3 2N637 TO-3 80 80 60 40 2N637A TO-3 2N637B TO-3 2N638

2N3614

Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022

2n456a

Abstract: 2N457A 2N458A 2N1022 2N1021 GERMANIUM PNP LOW POWER TRANSISTORS Texas Germanium Germanium power Germanium Power Transistors
Contextual Info: TYPES 2N456A, 2N457A, 2N458A, 2N1021 AND2N1022 P-N-P ALLOY -JUNGION GERMANIUM POWER TRANSISTORS 310 j m C CHOICE OF 40v, 60v, 80v, 100v, or 120v DEVICES < < r r m *o - « m w 2 H ro 0 = Z Crt z £ LOW Ico HIGH BETA LOW Res LOW THERMAL RESISTANCE mz £ ? p

2N1021

Abstract: 2N1021A 2N1022 2N1022A
Contextual Info: ., <Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA germanium power transistors PNP TO-3 (cont'd) Type* 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N629 2N1549&#39; 2N1550&#39;

2N1143

Abstract: 2N1142 TI3030 TI3028 2N1141 TI3027 TI3031 2N458A germanium transistors PNP 2N455A
Contextual Info: Germanium Transistors Type Case C o Maxim um R atings at 25°C amb. C haracteristics S P E C IA L 11 No. « a> o » O FE A TU R ES A - > ,- V CB V CE V EB V V V •c A Ptot W fc A h FE a Min. fT Max. V C E (S A T A -1 r 1-

2N1203

Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
Contextual Info: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

ASZ16

Abstract: asz1015 AL103 AD143 2N3611 PNP Germanium ASZ17 2SB407 2SB40 MP2062 ASZ15
Contextual Info: POWER GERMANIUM TRANSISTORS Item Number >C Part Number Manufacturer Type Max V BR CEO (A) Of) PD Max hre *T ON) Min (HZ) Max km Max (A) (8) ICBO r (CE)Mt Max (Ohms) T Oper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 ASZ1015 AUY30 AUY28 AUY28

germanium transistors NPN

Abstract: 2n1549 2N627 2N456A 2n1162 2N1560 germanium 2N458A 2n1291 2N1295
Contextual Info: germanium power transistors PNP TO-3 cont’d Type# = 3 to 25A Iife @ Ic / V c E NPN Comple­ VcEO(SUS) V ebo (Volts) (Volts) ment (Min-Max @ A/V) VcE(SAT) @ Ic/ I b Pd @ = 25°C Û JC (Watts) (°C/W) (V @ A/A) V be @ Ic/V cE (V @ A/V) (mA @ 1.5@5/1.5 1.5@5/1.5

2N4588

Abstract: dtg110 2S8337 ASZ1015 ASZ1018 2N4568 PTC120A 2S8407 AL113 MP3618
Contextual Info: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 30 2S8465 2N1906 AUY28 AUY28 AUY28 2Nl1378 2Nl136A 2Nl1368 ~~~~~~ 35 40 AL103 AL103 AL103 AL102 AL102 AL102 2N5887 2N456A ~r-:,~~~~ 45 50 2N5888 2N5889 2N4568 2N457A MP3611 2N3611 2S8338 2S8337 ~~~~~~

2N7805

Abstract: gw 340 diode t03 package transistor pin configuration 32N03 DTG2400 DTG-2400 2N2144A 2N1100 2N126 2n228 transistor
Contextual Info: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

2N3614

Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
Contextual Info: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the