CBR12 Search Results

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

Contextual Info: 17077W-, ,xAL SEMICONDUCTOR aäpst ? E P i ce n tra l Setwigeitglisgtor Corp. C e n tra l S e m ico n d u cto r C orp . c e n tra l se m ic o n d u c to r C o rp . 145 Adams Avenue Hauppauge, New York 11788 DE S C R I P T I O N T h e C E N T R A L S E M I C O N D U C T O R CRSH1 Series types are Schottky B a rrier R e ctifiers m o u n t e d in an

FUSE f10l 250v

Abstract: ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a lambda LMS Zener C218 fbt 073 12v to 230v inverters circuit diagrams sfbt-00 FBL-00-243 FBL-00 FBM-Z
Contextual Info: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLY LL S-7000 SERIES This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent of Lambda Electronics. All information contained herein

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

CR508

Contextual Info: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010

Contextual Info: 1989963 CENTRÀL SEMICONDUCTOR ' ' SKftWl nflTTLB 61C "00249 7 ^ 3 5 ^ 7 3 □ 0 D D 5 4 ‘ì S J " *• 'ï 3 if, '*ïf< j&-Lfv-r s*—.je MJ12010 eeratpcil g@Biie@iigl5jet©r c e r p . Central s e m i c o n d u c t o r eopp. JP NPN SILICON TRANSISTOR

CBR-75

Abstract: ceramic GHz click 1502
Contextual Info: Pg. 63 _ Stripline Base Mounted Resistors _ MECHANICAL SPECIFICATIONS Heat Sink : Copper, Nickel Plated per QQ-N-290. Substrate : Beryllium Oxide Ceramic. Contact : Beryllium Copper, Gold Plated per MIL-G-45204. Thickness : 0.004" ± 0.002". Cover : Alumina Ceramic.

Contextual Info: i A 12 Amperes General Purpose Silicon Power Rectifier kl VRRM<volts) ODGDlSb T iT | • CENTRAL S E M I C O N D U C T O R ^ »e | OQDOISL T | CR12I005 CR12I010 CR12I020 CR12I040 CR12I- 50 100 200 400 060 CR12I080 CR12I100 CR12I120 600 800 1000 1200 .060 (1.52) MIN DIA

CR20 Series

Contextual Info: CENTRAL SE MICONDU CTOR hi D 1 ooD D iss General Purpose S ilicon Power R ectifier tl DE | nflTTbB DDDDISS 7 CR12020 CR12040 CR12060 CR12080 CR12100 CR12- 005 CR12010 CR16005 CR16010 CR16020 CR16040 CR16060 CR16080 CR16100 CR16120 CR20005 CR20010 CR20020 CR20040

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

t1p117

Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C

Z6.8B

Abstract: Z12B Z9.1B DIODE Z8.2B Z6.2B C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B
Contextual Info: CENTRAL SEMICONDUCTOR n a “n t a qddqeöi 1 WATT ZENER DIODE CSBafiFi9l r S0oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Sorp, AXIAL LEAD D015 EPOXY CASE Central semiconductor Corp. C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

IN5374B

Abstract: in5374 IN5373B C3Z10B C3Z11B C3Z12B C3Z47B C3Z50B Zener Diode 1N5368B C3Z52B
Contextual Info: CENTRAL CENTRAL TYPE NO. SEMICONDUCTOR , 3 Watt Zener Diode • 5% Tolerance • Case C Zener Voltage Vz@lz Test Current Iz Zener Impedance Zz Maximum Zener Current IZM mA Volts mA Ohms C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B 6.2 6.8 7.5 8.2 9.1 75 75 75 75

reflectometer

Abstract: WR112 PDR84 UBR84 waveguide R120 WR75 PDR26 37260 CBR120 CBR220 UBR220 PDR48 Waveguide EW63 waveguide
Contextual Info: Hybrid T Reflectometer The Andrew hybrid T reflectometer is a unique and highly directive test component useful for measuring return loss or VSW R in waveguide systems. The reflectometer utilizes a precision hybrid T junction to separate the incident and reflected waves at the input of the system under test.

CBR-400

Contextual Info: Base Mounted Resistors MECHANICAL SPECIFICATIONS Cover Tolerance CBR-10 CBR-40 CBR-40-1 CBR-125 CBR-150 CBR-150-1 CBR-150-2 CBR-150-3 CBR-150-4 CBR-250 CBR-250-1 CBR-250-2 CBR-370 CBR-400 B T Copper, Nickel Plated per QQ-N-290. Beryllium Oxide Ceramic. Beryllium Copper, Gold Plated per MIL-G-45204.

phoenix pr02 470 5 2w

Abstract: Yageo MF0207 1m15 4k7 PHOENIX BEYSCHLAG pr02 MBB-0207-50 UE 09 7K5 CBR-11 2-M61 BEYSCHLAG MBB-0207-50
Contextual Info: NOVA Elektronik GmbH: Comp-Cards -System Metalfilm Resistors CBR-11 2 Flap FL24/10 48 Values / 1.850 Pieces Type/Brand: MBA 0204-50 (1,6ø x 3,6mm) / Vishay Beyschlag 0,4W at +70°C Wattage: Value Range: 10Ω-1MΩ (E6/E12) ±1% Tolerance: 50ppm/°C TC:

CR150-080

Abstract: CBR-12
Contextual Info: CENTRAL SEMIC ONDUCTOR tí d~ 1 □ □ □ o is i E i 3 - 2 ffi5 i £ a e a s e 150 Amperes 4 . ^ L General Purpose Silicon Power Rectifier hi de | nanta 4 | ooddist o V RRM (volts) Vr (volts) V R (RMS)(volts) CR1 50- CR150- CR150- CR150- CR150- CR150-

2N295

Abstract: 2N2891 2N223
Contextual Info: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221

LZ-230 zener diode

Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz

Contextual Info: »."¿'ix fQ Ò Ï 9 0 19S996-3 f E M ' T R A C f S E M l C Q N O Ü Ü t O K DE J j O O Q O E T O S e m ico n d u cto r C o r p . C e n tra l se m ic o n d u c to r c o rn . C e n tra l se m ic o n d u c to r C o rp . c e n tra l se m ic o n d u c to r C o rp .

2n3072

Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1VÖVVOJ U CINI R A L D E I nû'î'JtiB ODDOSSG 3 T ¿ v n h an r t *j* 7 / «•* 6 i. ci r nono^zzo ~ O* StrtlCUN Ü UtTÜR V eb hFE at •c V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35

Contextual Info: P/N: CBR-125 Mechanical Specifications Covers: Alumina Ceramic. Substrate: Beryllium Oxide Ceramic. Contact: Stripline Base Mounted Resistors Electrical Specifications Resistance Value: 10 - 1000 Ω or as required. Other values available upon request. Standard Resistance Tolerance:

Contextual Info: P/N: CBR-125 Mechanical Specifications Covers: Alumina Ceramic. Substrate: Beryllium Oxide Ceramic. Contact: Stripline Base Mounted Resistors Electrical Specifications Resistance Value: 10 - 1000 Ω or as required. Other values available upon request. Standard Resistance Tolerance: