CBR10SERIES Search Results

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

Contextual Info: 17077W-, ,xAL SEMICONDUCTOR aäpst ? E P i ce n tra l Setwigeitglisgtor Corp. C e n tra l S e m ico n d u cto r C orp . c e n tra l se m ic o n d u c to r C o rp . 145 Adams Avenue Hauppauge, New York 11788 DE S C R I P T I O N T h e C E N T R A L S E M I C O N D U C T O R CRSH1 Series types are Schottky B a rrier R e ctifiers m o u n t e d in an

CR508

Contextual Info: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010

Contextual Info: 1989963 CENTRÀL SEMICONDUCTOR ' ' SKftWl nflTTLB 61C "00249 7 ^ 3 5 ^ 7 3 □ 0 D D 5 4 ‘ì S J " *• 'ï 3 if, '*ïf< j&-Lfv-r s*—.je MJ12010 eeratpcil g@Biie@iigl5jet©r c e r p . Central s e m i c o n d u c t o r eopp. JP NPN SILICON TRANSISTOR

Contextual Info: i A 12 Amperes General Purpose Silicon Power Rectifier kl VRRM<volts) ODGDlSb T iT | • CENTRAL S E M I C O N D U C T O R ^ »e | OQDOISL T | CR12I005 CR12I010 CR12I020 CR12I040 CR12I- 50 100 200 400 060 CR12I080 CR12I100 CR12I120 600 800 1000 1200 .060 (1.52) MIN DIA

D40C2

Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C

CR150-080

Abstract: CBR-12
Contextual Info: CENTRAL SEMIC ONDUCTOR tí d~ 1 □ □ □ o is i E i 3 - 2 ffi5 i £ a e a s e 150 Amperes 4 . ^ L General Purpose Silicon Power Rectifier hi de | nanta 4 | ooddist o V RRM (volts) Vr (volts) V R (RMS)(volts) CR1 50- CR150- CR150- CR150- CR150- CR150-

2N295

Abstract: 2N2891 2N223
Contextual Info: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221

LZ-230 zener diode

Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz

Contextual Info: CENTRAL SEMICONDUCTOR □□□□3Db 2 r r - z^ S '-1-3 saiîjÊffüI central CS39-2 i i s n l s o n ä u e f e r C o rp . C e n tra l S e m lc o iiÊ fy e É s r co?f&. SILICON CONTROLLED RECTIFIER central Semiconductor Corp. 2 AMPS 50 THRU 400 VOLTS

Contextual Info: 1989963 CENTRAL SEMICONDUCTOR t.1 3E &ê39 61C "00270 7W/-// DE I n ö T T b a 0D0DS7D 7 r 1N935B 1N936B 1N937B 1N93ÔB 1N939B @b C auîtral SsHaBeemaiDctoB* e©G’p. s central semiconductor Corp. TEMPERATURE COMPENSATED ZENER DIODE 145 Adams Avenue

IN4706

Abstract: 1N46A
Contextual Info: 61C 00277 1989963 CENTRAL SEMICONDUCTOR : :V~TÏ g ngi?ga9 g KHS@©BBe3e5gfi@E? @®r;po €©&a€ffS9B D E | l'iôT'it.B '-T-'U 'D '? 0000577 | 1NA678 THRU 1 N 4 7 H LOW LEVEL SILICON ZENER DIODE C@iifral Ê@üîis@Bîeisgst csr JEDEC DO-7 CASE central

2N5133

Abstract: to 106 2n5133 2N3638A 2N3563 2N3638 2N3644 2N5088 2N5089 2N5127 2N5131
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NO ISE LE V E L A M P LIF IE R Cont'd. a Vcb V CE V EB I'F E at •c VCE V V V min max mA V 2N 5088 2 N 5089 2N5127 2N5131 2N5133 30 25 20 20

Contextual Info: • 1969963 CENTRAL' SEM IC ON D UC TO R 61C 00175 S^ttJÏHB £Ç5BB«a»l9SEafc r Vb&SBTgäi. £ 0 ü M g s m i£ @ s ifis ie t f C o r p . Central sesniecmeiiBetor Corp. central semiconductor Corp. 145 Adams Avenue Hauppauge, New York 1 1 7 8 8 DESCRIPTION

Z9.1B

Abstract: Z62B Z6.2B Z8.2B Z82B Z6.8B CBR-12 DIODE Z8.2B z91b Z6,2B
Contextual Info: CENTRAL SEM ICOND UC TO R *~ t3 1 WATT ZENER DIODE CSBIfiFial S0Oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Corp. Central semiconductor Corp. AXIAL LEAD D015 EPOXY CASE C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

Contextual Info: central ]>EjnflTib3 DDDD3D7 4 1 ~ semiconductor CS55AZ CS55BZ CS55FZ CS55DZ CS55MZ e & a G b :e J Stop. £ t> ^ 3 U U£ Ë ^ 5 B S 3 S u j @ ? ©Qirpo gdBMBieeoBcgasefQE3 e@i?g . GSBtâral Ê©raS(g@Bi2fiysÊ@p C e ^ p . SCR Central semiconductor Corp.

C1N4156

Contextual Info: CENTRAL SEMICONDUCTOR bl DE | ITA TT t.3 0 O □ 0 £ 7 3 2 | r ~ //-Z/ f e K S S S ' ” '“ s & f ó r a l E m ï Æ È m m M & m s ' e @ s 5p. Ci üt r^ iS S@nil£©n£iue£©r C1N4156 C1N4157 C 1N 517 9 Cintrai ie m le o n ä e s to F C o rp . FORWARD REFÈRENCE DIODE

2N5431

Abstract: 2N6028A 2N2160 2N2840 7T6027 2N3483 2N4947 2N494A
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SE MICONDUCTOR bï » E J n f m b a aooaaBb ? UNIJUNCTION TRANSISTORS (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a wide temperature range. These applications include: Pulse Generators, Saw Tooth

2N4143

Abstract: T0105 2N3640 2N5383 2N4122 2N4355 2N4917 2n5139 2N4916
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. C0b MHz pF Vcb V CE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122

Contextual Info: CENTRAL SE MICONDU CTOR 250 Amperes bi \ d | □□□□it.i a I 'T '- O I 'O / General Purpose Silicon Power Rectifier "tl D E § n f l tn fe .3 V rrm volts 2 1 | CR250- CR250- CR250- CR250- CR250- CR250- CR250- CR250- 005 010 020 040 060 080 100 120 50

MPS5307

Abstract: MPS5308A mps5308
Contextual Info: CENTRAL bl SEMICONDUCTOR D I l c\ac\cih3 G O D O E D S 7 € üfiral i@itBte ss^iic-t@p e © p p . Central r T-33-29 MPS5305 MPS5306,A MPS5307 MPS5308.A s@mi€oiiduet@r eorp. Centres! Sem iconductor Corp. Central semiconductor Corp. NPN SILICON DARLINGTON TRANSISTORS

JEDEC T0-220

Contextual Info: bl C E N T R A L S E M I C O N D U C T O R DE I n f l T T h H DDDG177 b /'-¿j-O 7 *31 £ @ Ii£ ? £ ll sesnfleoiifRiefiior C@i?p. CRSH16D SERIES C e n tra l Sünic9iiäy£tsr s@rp. 16 AMP, 20 THRU 80 VOLTS CENTER TAP SCHOTTKY RECTIFIER central semiconductor Corp.

Contextual Info: 1989963 CENTRAL SEMICONDUCTOR D 0 Baef0 B ^ETrôCG®GadI®SÊ F Ê @ E ~ P nflT1b3 61C 00274 T-V/W/ H T 1IÏM 337 OA THRU 1N4372A D000274 SILICON ZENER DIODE 500mW, 2.4 THRU 3-0 VOLTS gdiBaioeG^oig-lBfleii’©^ e©E?p„ Central £@Bl?i!e©mgflUGt!Or C © 6 ’p.