2N4121
Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30
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OCR Scan
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dddds132n40602n40612n4062-+132n4121o-1062n41222n41252n41262n51392n49172n36392n5138 0162n40622n53832n58572n5138
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2N4143
Abstract: T0105 2N3640 2N5383 2N4122 2N4355 2N4917 2n5139 2N4916
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. C0b MHz pF Vcb V CE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122
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OCR Scan
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dddds132n40602n40612n40622n4121+132n41222n41252n41262n41422n41432n4228t01052n36402n53832n43552n49172n51392n4916
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2N5041
Abstract: 2N4228 2N4122 2N4121 2N3639 2N5383 2N4355 2N4917 2N5139 2N5143
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30
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OCR Scan
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dddds132n40602n40612n4062-+132n4121o-1062n41222n41252n41262n50412n42282n36392n53832n43552n49172n51392n5143
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