2N3563
Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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OCR Scan
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d0d0s152n50882n5127o-106+122n51312n51332n52092n52102n35632n36382n36442n36452n51322n3638a2n3702to 106 2n5133
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2N5133
Abstract: to 106 2n5133 2N3638A 2N3563 2N3638 2N3644 2N5088 2N5089 2N5127 2N5131
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NO ISE LE V E L A M P LIF IE R Cont'd. a Vcb V CE V EB I'F E at •c VCE V V V min max mA V 2N 5088 2 N 5089 2N5127 2N5131 2N5133 30 25 20 20
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OCR Scan
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2n50882n50892n5127o-106+92n51312n51332n52092n5210to 106 2n51332n3638a2n35632n36382n3644
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2N3563
Abstract: 2N3645 to 106 2n5133 2N3638 2N3638A 2N3644 2N5133 2N5088 2N5089 2N5127
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. a Vcb VCE V EB I'FE at •c VCE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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OCR Scan
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2n50882n50892n5127o-106+102n51312n51332n52092n52102n35632n3645to 106 2n51332n36382n3638a2n3644
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85040 orga
Contextual Info: tJbE D • ISbBbTfl TTWhite Technology, Inc. Vpp C A19C 2 A16C 3 A15C 4 A12 C 5 A7C 6 ^ A 3 C 10 A 2 C 11 25 □ ÖE 24 HA10 A1 C 12 AOC 13 DOC 14 23 I C E 22 J D 7 21 u D6 D1 C 15 D 2 C 16 20 U D5 19 J DA C 17 18 J D3 ■ BUT WF-1024K8-200 31 U A17 30 U A14
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OCR Scan
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d000s10wf-1024k8-20010usec17554j+185040 orga
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