2N3563
Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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d0d0s152n50882n5127o-106+122n51312n51332n52092n52102n35632n36382n36442n36452n51322n3638a2n3702to 106 2n5133
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2N5133
Abstract: to 106 2n5133 2N3638A 2N3563 2N3638 2N3644 2N5088 2N5089 2N5127 2N5131
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NO ISE LE V E L A M P LIF IE R Cont'd. a Vcb V CE V EB I'F E at •c VCE V V V min max mA V 2N 5088 2 N 5089 2N5127 2N5131 2N5133 30 25 20 20
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2n50882n50892n5127o-106+92n51312n51332n52092n5210to 106 2n51332n3638a2n35632n36382n3644
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2SC817
Abstract: 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2N5130 2n5179 2SC1789 2SC838
Contextual Info: NO. MAXIMUM RATINGS Pd ImWl •c ImAI V CE SAT V CEO (V) min max 'c ImAI V CE (V) max (V) 'c (mA) fT min Cob Cre« max max (MHz) (pF) (dB) N.F. 2N5127 2N5130 2N5131 2N5132 2N5179 N N N N N TO-106 TO-106 TO-106 TO-106 TO-72G 200 200 200 200 200 100 50 200
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2n5127o-1062n51302n5131+112n51322n5179o-72g2sc8172sc9292sc9482sc1730transistor 2sc9302sc9472sc17892sc838
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2N3563
Abstract: 2N3645 to 106 2n5133 2N3638 2N3638A 2N3644 2N5133 2N5088 2N5089 2N5127
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. a Vcb VCE V EB I'FE at •c VCE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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2n50882n50892n5127o-106+102n51312n51332n52092n52102n35632n3645to 106 2n51332n36382n3638a2n3644
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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JAN2N760A
Abstract: 2N3692 2n2510 2N3565
Contextual Info: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18
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2n7602n760ajan2n760a2n929+5jan2n929157khz2n36922n25102n3565
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416
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SE3001
Abstract: SE-3001 to106 SE5006 2n3564 2N5770 2N3563 2N5130 TO-106 SE3002
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER AND OSCILLATOR TRAN SISTO RS BY A SCEN D IN G FREQUENCY PLASTIC PACKAGE 10.0 25.0 25.0 28.0 28.0 29.0 29.0 30.0 20.0 20.0 @ @ @ @ @ @ @ @ @ @ 14.0 14.0 15.0 15.0 17.0 19.0 20.0 12.0 12.0 15.0 (30.0) (30.0)
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2n5127pe3100se10102n3564+15pe5025pe5013pe5029pe5030b2n36882n3689se3001se-3001to106se50062n57702n35632n5130to-106se3002
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
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cb-403cb-410cb-303cb-4111+16cb-306cb-4071cb-404cb-408cb-40952n6082mrf245pt8828bfy70j0303cm-501sd12382n6096rf transistor s10-122n4932bly94
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mrf245
Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Contextual Info: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL
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sd2n6082bm80-12sd1416mm1601+15mrf631sd1144pt8549sd1214n50542n3553mrf245pt9788pt87102n5642bly94pt8811blx66pt87402n4072
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2sc948
Abstract: 2N4935 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730
Contextual Info: RF-IF High Frequency Transistors POLA RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J
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2n4934o-72j2n49352n4936+122n4994o-92f2n49952sc9482sc9222sc16742sc7172sc9472sc8392sc9292sc9302sc1730
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2N5449
Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127
Contextual Info: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO
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2n36942n51272n51312n5132+145n5451tp5137tp5139tp5824tp5825tp58262n5449mps-k722n36932n51432n5447k72 npnk72 transistorthree-five
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820byx22-400byx22-600byx22-800+14byx26-60yx26-150byx36-1byx36-3001.0 k mef 250me4003me4002ma0411transistor me6101transistor bc 172b2n2959transistor bf 1752n51732n3072
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bcs47
Abstract: BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238
Contextual Info: 1 < 3 2 1 DIM MIN MAX A 4,32 5,33 8 4,45 T 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 H 1,14 1,53 K 12,70 - 1,40 ALL D IM EN SIO N S IN M M. Pin Configuration Available in TO-92 S JÜ - A A SEC ^ CDU. Code Style Pin 1 TO-92 Pin 2 Pin 3 Emitter
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o-92-1o-92-2o-92-3o-92-4+15pn5179pn5449pn5b16pn7055tis87bcs47bcs48bc170c8c548bf494 ph 06bc170bbf494 ph 04cd639bcs48bbf238
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Contextual Info: Maximum Ratings Type No. 2N5088 ^CBO ^CEO V Min <V) Min 35 30 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) beo ?D m (A) (V) Min 0Tc=26°c 5 ^CB 'c e s ^CE " fe (PA) @(V) (UA) (V) Max Max Min 0.625 0.05 0.05 20 300 350 300 'c&
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2n50882n5127 |
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2N3694
Abstract: 2N5219 2N5127 2N5131 2N5132 2N5227 MPS-A05 MPS-A06 MPS-A10 MPS-A20
Contextual Info: Econoline Plastic-Molded Silicon SEPT” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package EBC Pinning D-C C U R R E N T GAIN >- Typ e No. cc < o CL Pd (hFE ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C CBO CEO EBO VcE lc
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2n36942n51272n51312n5132+12mps3706mps3707mps3708mps3709mps3710mps37112n52192n5227mps-a05mps-a06mps-a10mps-a20
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9033 transistor
Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431
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302n6082bm80-12sd1416mm1601+16mrf631sd1144pt8549sd1214n50542n35539033 transistorpt88282n4932pt8740blw27blx66sd1315bly94mm1669pt8811
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PT8740
Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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t8710sd12382n51262n918+162n5642bm100-28mm1603mrf633sd1145pt8717pt8740pt8811replace for 2n918pt9780mrf245thomson-csf productstransistor pt4544pt9788pt8710pt8828
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2SC922
Abstract: 2SC948 2N4935 2N5132 2sc929 2N4994 2SC947 2SC1789 2SC838 2N4934
Contextual Info: RF-IF High Frequency Transistors POLA RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J
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2n4934o-72j2n49352n4936+102n4994o-92f2n49952sc9222sc9482n51322sc9292sc9472sc17892sc838
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108thmt11152n3303fpt100 phototransistor+7ua739 equivalenttransistor bc 554 pnpmt1039ft2974fairchild 2n3565fd6666 diodetransistor npn epitaxial silicon sst 117
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