TO106 Search Results

to106

Abstract: NTE108 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v
Contextual Info: NTE108 and NTE108−1 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 TO92 and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating

Contextual Info: 1061 Connectors Inlets/Outlets www.schurter.com/pg07 IEC Appliance Inlet C14/C18, Snap-in Mounting, Front Side, Solder or Quick-connect or Screw-on Terminal C14 C18 70° C 70° C Description Weblinks - Panel Mount: Snap-in version, Frontside - Appliance Inlet, Pin temperature 70 °C, protection class I or II

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

bc 147 transistor

Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Contextual Info: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

BF 914 transistor

Abstract: diode t 4148 33T4 transistor BF 914
Contextual Info: DIODES PROFESSIONAL GRADE GENERAL PURPOSE DIODES — CONT INENTAL DEVICE INDIA 32E D trr 4 nsec; dissipation 250 mW; IPM=225 mA. AXIAL LEAD * 23033^4 OOOODlfl 3 m T - 0 3 - c > 9 • . PIV Volts min VF@ Volts max IF mA CT 41 CT 42 CT 43 CT 44 25 40 50 75 100

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50

Contextual Info: r C i : : ~ &L 61C SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB g®BMie@6ieai9e€ p ®@Pß9. e©Bïfti’gil „ de _ n a ^ t a □ o a o 2 t . cï | T - ff- o'? 1Ng2 i A 1N823Ä 1N825A 1N827A . 1N829A TEMPERATURE COMPENSATED

Contextual Info: 17077W-, ,xAL SEMICONDUCTOR aäpst ? E P i ce n tra l Setwigeitglisgtor Corp. C e n tra l S e m ico n d u cto r C orp . c e n tra l se m ic o n d u c to r C o rp . 145 Adams Avenue Hauppauge, New York 11788 DE S C R I P T I O N T h e C E N T R A L S E M I C O N D U C T O R CRSH1 Series types are Schottky B a rrier R e ctifiers m o u n t e d in an

BC148

Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150

TRANSISTOR BC 208

Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
Contextual Info: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2

BF117

Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18

T106 thyristor

Abstract: S4008LS3 T106M
Contextual Info: * Se le ka s ge ED Z NI E5 G 39 CO 716 E R #E ct L. U. c Pa ed le Fi TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

SE4020

Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max

SE4010

Abstract: 2N3565 TIS92 2N3692 TIS90 2N2924 PN3565 PN3566 PN3694 PN4249
Contextual Info: TYPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers CASE M A X IM U M R A T IN G S Pd mW 'c (m A | V CE(SAT) h fe V CEO (V) min max 'c (m A) V CE (V) max (V) 'c (m A ) fT m in (MHz) Cob N.F. max max (pF) (dB) PN3565 PN3566 PN3694 PN4249 PN4250

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

2N5815

Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314
Contextual Info: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50

2N4248

Abstract: 2N4142 transistor 2N4248 2N4143 CIL157 CIL157B CIL246 CIL258 CIL261 CIL223
Contextual Info: TO-106 EPOXY PACKAGE TRANSISTORS PNP Type vceo (V) Mir V EBO (V) Min CIL261 100 100 5.0 C1L251 80 80 2N42S4A 60 CtL241 V CBO No. (Ta=25°C, U nless Otherwise Specified) Electrical Characteristics Maximum Ratings (V) Min IcBO • m e hFE V CB lc (mA) & V CE

CR508

Contextual Info: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010