T3D+53
Abstract: t3d 05 T3D 53
Contextual Info: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type
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psd51psd54psh81psl51+4o-226aa/stylet3d+53t3d 05t3d 53
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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ic 8040
Abstract: MPSH81C D29A4 MPSD52C
Contextual Info: S P R A G U E/ S EM IC O N D \ GROUP 85 14 01 9 SPRAGUE, T3 Ô513050 000357 5 “J • D 93 D 0 3 5 7 5 2 ^ S E M I C O N D S / ICS \ BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type
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mpsa92cmpsa93cmpsd51cmpsd52c+8mpsd53cmpsd54cmpsd55cmpsd56cmpsh81cmpsl51cic 8040d29a4
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D29A5
Abstract: 2N5381 transistor 3405 npn 2N5383 D29A4 2N4425 2N2713 2N5380 2N5368 2N5371
Contextual Info: SPRAGUE Econoline P la stic -M o ld e d Silicon SEPT" Transistors Type No. P O L A R IT Y GENERAL-PURPOSE AMPLIFIERS/SWITCHES D -C C U R R E N T G A IN h FE PD Ta = 25 C (mW) V (BR) CBO V olts V (BR) CEO Vo lts V (BR) EBO Vo lts ICBO mA Cond tions Max. lc
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2n53682n53702n53712n5372+122n53732n49542n54182n5419d29a4d29a52n5381transistor 3405 npn2n53832n44252n27132n5380
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Contextual Info: AL L E G R O M I C R O S Y S T E M S INC T3 8 5 1 4 0 1 9 S P R A GU E. D • 05D433Ö DGDBSTÔ S E M I C O N D S / ICS T ■ ALGR 9 3 D 0 3 5 98 J> _ ' ^ ¿ 7 - 1 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘M PS’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C
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05d433mpsd51mpsd52mpsd53+5mpsd54mpsd55mpsd56mpsh81mpsl51
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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TRANSISTOR 1003
Abstract: br 903 PSA92C
Contextual Info: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC Ta D • DS0M33Ô SEMICONDS / ICS DDQ3S7S Ö ■ 93D 035753 ALGR f“ # 7. BIPOLAR TRANSISTOR CHIPS_ _ PNP Transistors ‘M PS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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ds0m33psa92cpsa93cpsd52c+8psd53cpsd54cpsd56cpsl51cbfa200d29a4ctransistor 1003br 903
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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sylvan58mc09a001-0066x0003-00150746a+1568x000368x0003-001t-e013793b3-393b3-4st178diode e1110ck705ecg semiconductor replacement guidecs1237me1120te10881n9421n733adelco dtg-110b transistor
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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tht404zv15azy33azt696+16zv15bzy33bzt697zt706zv27azy62atriac zd 607hep c60042sb5042sc 968 npn transistorsje 607motorola c6004diode by127 specificationsk872af118motorola semiconductor hep c3806p
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