2SA63 Search Results

2SA636

Abstract: 2sc1098 2SA636A
Contextual Info: Inchange Semiconductor Product Specification 2SA636 2SA636A Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and

2SA675

Abstract: 2SC507
Contextual Info: High Voltage Transistors TYPE NO. POLA­ RITY CASE MAXIMUM RATINGS Pd IC VCEO ICM» VCER* mW (mA) (V) HFE min m u 2N6734 2N6735 2SA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO-18 TO-92B TO-92B 25000 2S00D 300 200 250 100 100 50 50 100 250 300 150* 180

2SA634

Abstract: 2SC1096 SYMBOL ic 4060
Contextual Info: SavantIC Semiconductor Product Specification 2SA634 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING see Fig.2

2SA633

Abstract: vebo TO-202 Package
Contextual Info: Power Transistors www.jmnic.com 2SA633 Silicon PNP Transistors BCE Features ﹒With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage

2SA634

Abstract: 2SC1096 2SA634 M 2SC1096 M
Contextual Info: AOK AOK Semiconductor Product Specification 2SA634 S ilicon PNP Power Transistors DESCRIPTION • With T 0 2 0 2 package • Complement to type 2SC1096 • High current capability APPLICATIONS • Audio frequency power amplifier • Low speed switching PINNING see Fig.2

2SA633

Contextual Info: AOK Product Specification AOK Semiconductor 2SA633 Silicon PNP Power Transistors DESCRIPTION • With T 0 2 0 2 package • High current capability APPLICATIONS • Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SA636

Abstract: HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 2SC1098 251C 2SA636A 2SC1098A tup pnp transistor
Contextual Info: 2SA636, 636A /2SC 1098, 1098A 2SA636, 2SA636A/2SC1098, 2SC1098A PNP/NPN i t ' ^ v T J U J B v ' J =i> h 7 > v T .^ / P N P / N P N SILICON EPIT A X IA L TRANSISTOR {S ilJS iX - i y ^ v y f f l / A u d i o Frequency Power Amplifier, Low Speed Switching I ^ /F E A T U R E S

2SA675

Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
Contextual Info: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N

2sa634

Abstract: 2sc1096 2sa634 datasheet
Contextual Info: Inchange Semiconductor Product Specification 2SA634 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1096 ·High current capability APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING see Fig.2

2SA636

Abstract: 2SA636A
Contextual Info: JMnic Product Specification 2SA636 2SA636A Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・Complement to type 2SC1098/1098A ・High breakdown voltage ・High transition frequency APPLICATIONS ・For audio frequency power amplifier and low speed switching applications

2sc1096

Abstract: 2SA634 2SC1069 2SC09 2sc109 2SA634 M 251C transistor 2sa634 2SC096
Contextual Info: 2SA634/2SC1096 2SA 634/2SC 1096 P N P /N P N n V P N P /N P N S IL IC O N E P IT A X IA L T R A N S IS T O R A udio Frequency Power A m p lifie r, Low Speed Sw itching 1$ ^ / F E A T U R E S •W M tH tl 3 ~ 5 W R L = 4 il c O * — X r p jf , f i — 7 $ 7 v7<ntii-J]fflHZM &o

nixie tube driver

Abstract: 2SA639 2SA638 251C PA33
Contextual Info: 2SA638 , 2SA639® 2SA638 D, 2SA639(D PNP U 3 V h 7 V - ^ 7 ^ (7 JI/ i a V ® / PNP SILICON EPITAXIAL TRANSISTOR(Alumina Passivation) lE ^ W K lil, y f - V ^ 'f f l/ N ix ie Tube Driver, High Voltage Switching D — X /ln d u s t ria l Use, Series *HK0/PACKAGE DIMENSIONS

2SA639

Contextual Info: NEC P N P SILICON T R AN SISTO R ELEC TR O N DEVICE D E S C R IP T IO N 2SA639 The 2SA639{§ is designed fo r use high voltage sw itching application. FEATU R ES • High breakdow n voltage BVcer : -1 8 0 V A B S O L U T E M A X I M U M R A T IN G S M axim um Temperatures

2SA633

Contextual Info: Inchange Semiconductor Product Specification 2SA633 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·High current capability APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

2SA634

Contextual Info: Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors BCE Features ﹒With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage

2SA636

Abstract: ic 4060 2SA636A 2sc1098
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION •With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and

2SA633

Contextual Info: SavantIC Semiconductor Product Specification 2SA633 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·High current capability APPLICATIONS ·Power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

2SA554

Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A

Contextual Info: tSs.mi-CondiLcto'i ^Pioaueti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-89fin 2SA634 Silicon PNP Power Transistor DESCRIPTION • High Collector Current lc= -3A • Collector-Emitter Breakdown Voltage: V(BR)CEo= -SOV(Min)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC1012

Abstract: 2sc1279 2SA675 2SC1012A 2SA685 2SC1103 2SC505 2SA637 2SA639 2SA749
Contextual Info: M A X IM U M R A T IN G S V CEO 'c m * Im A I V CER * V 300 200 250 300 250 50 50 100 50 50 150* 180 80» 150» 100 30 30 50 30 50 Pd (mW) 'c min max (m A) m 'c Cob V C E(SA T) h fe fT min Cre • (mA) (MHz) (pF) max ’c (V) max I NO. CASE < o< TYPE P O L A R IT Y

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable