sc 6038
Abstract: N6039 2N603 LT 7706 Motorola Mc 1461 to225aa 2N 6036 2N6037
Contextual Info: MOTOROLA •SC XSTRS/R F 15E D I t3b75SM OOflMSflO Ì | T~33 ü j 2N602Ô thru MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP NPN 2N6034 2N6035 2N6036 2N6037 2N6038 2N6039 PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and low-speed switching
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t3b75sm2n6022n60342n6035+102n60362n60372n6038sc 6038n60392n603lt 7706motorola mc 1461to225aa2n 6036
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npn darlington transistor 150 watts
Abstract: 2n6038 2N6039 transistor 2n6038 2N6035 2N8030
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N8030 thru 2N6031 8m 2NS630J Plastic Darlington Com plem entary Silicon Power Transistors PNP 2N 6035 . . . designed for general-purpose amplifier and low-speed switching applications. • • • • • High DC Current Gain —
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2n80302n60312ns630j2n6035+72n60382n60362n6039o-225aa2n603snpn darlington transistor 150 wattstransistor 2n6038
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1N5160
Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A
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1n50001n50011n50021n5003+141n51491n51501n51531n51551n51581n51591n5160max 6438 geo semiconductors2n6058transistor bf 1752n39022n56961n5788germanium itt
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