2N3449 Search Results

2n2635

Abstract: 2N985 2N461 GERMANIUM SMALL SIGNAL TRANSISTORS 2n4525 2N3449 2N398A 2N427 2N963 2n964
Contextual Info: GERMANIUM PNP MESA TRANSISTORS Type 2N828A 2N829 2N808 2N960 2N961 2N962 2N962 2N963 2N964 2N964 2N964A 2N965 2N966 2N967 2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975 2N985 2N2635 2N3449 VcBO y Max f^Emo V Max 15 15 30 15 12 12 12 12 15 15 15 12 12 12 15

Contextual Info: 2N3449 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)6.0 V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.

6P18P

Abstract: 2N2455 2N964 Low-Power Germanium PNP 2N705 2N828 oc44n 2G103 2G102 2n617
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number 10 2N2627 2N617 2N968 2G101 2G101 2G102 2G102 2N1646 2N725 MA903 ~~:1°io 15 • · 20 2N741 2N984 GT31 GT31 2N2199 2N3449 2N960 2N2487 ~~~~~~ 25 30 2N2455 2N2456 NKT352 2N311 2N519 2N828A NKTI3 OC45N ~~~~gA 35

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

2N398A

Abstract: Germanium Transistors 2N396 2N965
Contextual Info: GERMANIUM PNP MESA TRANSISTORS VcBO f^Emo Max V Max 2N828A 2N829 2N808 2N960 2N961 15 15 30 15 12 2.5 2.5 2.5 2.5 2.0 2N962 2N962 2N963 2N964 2N964 12 12 12 15 15 1.2 1.3 2.0 2.5 2.5 2N964A 2N965 2N966 2N967 2N968 15 12 12 12 15 2.5 2.0 1.2 2.0 2.5 2N969 2N970

2N3406

Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391

AC176

Abstract: AC184 AC127 AC128 2N2635 AC122 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924
Contextual Info: ~ - - , - - • - 7 .-«. G E R M A N I U M PO W E R D E V I C E S Fq — - - SDE D . - . ■ . _ _£. _ ^ . - _. . - 3T473?5 00Q05Q? 2 ■ GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

KT808AM

Abstract: KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4