2N311 Search Results

2N3114CSM

Contextual Info: 2N3114CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

150 watt hf transistor 12 volt

Abstract: MC 140 transistor "MC 140" transistor 300 watt hf transistor 12 volt 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt transistor mc 140 2N3118 SSF 4606 MC 150 transistor
Contextual Info: File No. 42 R F Power T ra n sis to rs Solid State Division 2N3118 R C A - 2 N 3 1 1 8 is a t r i p l e - d i f f u s e d p l a n a r t r a n s i s t o r of the s i l i c o n n - p - n t y p e i n ­ t e n d e d for use in R F a m p l i f i e r s in m i l i t a r y

2N3117

Contextual Info: 2N3117 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3117 is Designed for General Purpose Low Level Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 5o mA Ie < o m eo V p d is s 3eo mW @ Ta = 25 °C Tj -es 0C to +2oo 0C Ts t g -e5 0C to +2oo 0C 0 je

Contextual Info: ,U na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 NPN2N3108-2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.

2N859

Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385

BC238BP

Abstract: BF494C BC238CP BSX77 2N295 BF194 2N2954 2SC398 bf494 motorola BF332
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N4435 2SC2776 2SC2778 2N3293 2N3294 2N2476 2SC398 2SC398 2SC398 2SC399 ~~g~~~ 15 20 25 30 35 40 2N2477 2N2847 2N2848 2N2958 2N3115 2N3982 2N3982 2N3982 2SC2295 2SC33 2SC204 BSX76 BSX77 2SC323

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM • High Voltage • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N3107

Abstract: N3107 2n3110 TS37 2N311
Contextual Info: 30 E D • 7=^537 0031157 ê SGS-THOMSON ^□OML| ï[R] g [MDOi T '3 S -1 < Ì 2N3107/2N3108 2N3109/2N3110 S G S-TH 0 MS 0 N GENERAL PURPOSE AMPLIFIERS AND SWITCHES D ESCRIPTIO N The 2N3107, 2N3108, 2N3109 and 2N3110 are silicon planar epitaxial NPN transistors in Jedec

2n3114

Contextual Info: FI "T-^l -US - 3QE JD H 7 ^ 2 3 7 ÜQBllbl T • . S G S-THOMSON ._ ~ -S G S -T H O M S O N G * ^ Q & iC T [ïM O Û S 2 N3114 HIGH VOLTAGE AMPLIFIER DESC RIPTIO N The 2N3114 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-39 metal case. It is primarily

2N2201

Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
Contextual Info: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings

2n3114

Contextual Info: 2N3114 Si NPN Lo-Pwr BJT 4.50 Transistors Transistors Bipolar Si NP. 1 of 2 Home Part Number: 2N3114 Online Store 2N3114 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N1256 S P

Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min

S07T_2N3117

Abstract: 2n3117
Contextual Info: 2N3117 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C

2N3114

Abstract: N3114
Contextual Info: rZ 7 SGS-THOMSON *7# R HiOraSOSDOS 2 N3114 HIGH VOLTAGE AMPLIFIER D E S C R IP T IO N The 2N3114 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applica­ tions. IN T E R N A L S C H E M A T IC D IA G R A M

pic 08m

Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174

2N3117

Contextual Info: TYPE 2N3117 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -5 6 7 8 8 7 6 , J A N U A R Y 1 96 7 DESIGNED FOR USE IN LOW-LEVEL, LOW-NOISE AMPLIFIERS • Guaranteed Low-Noise Characteristics at 10 Hi, 100 Hz, 1 kHz and 10 kHz • High Guaranteed hF[ at

2N3114

Contextual Info: 2N3114 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3114 is a NPN Silicon Transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

2N3119

Abstract: solid state RF HIGH-POWER SWITCH TFA 1001 RCA-2N3119
Contextual Info: File No. 44 DQGBÆI RF P o w er Transisto rs Solid State Division 2N3119 H ig h -P o w er Silicon N -P -N Planar Transistor For Switching and Pulse-Amplifier Applications F e a tu re s : • High voltage ratings: V C E X = 100 V ' V CEO = 8 0 V ■ Fast rise tim e:

Contextual Info: \Pioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3119 NPN SILICON TRANSISTOR JEDEC TO-39 CASE 2N3H9 type is a silicon NPN transistor manufactured by the epitaxial planar process designed for high voltage switching applications.

2N217

Abstract: 2N2708 2N4135 2N859 2N915 2N3117 2N4383 2N4384 2N4385 2N4386
Contextual Info: NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER Cont'd. TYPE NO. VCB 2N3117 2N4383 2N4384 2N4385 2N4386 • 60 40 40 40 40 V VCE V EB hpE at •c Vce mA V V mA MHz 1.0 10 10 10 10 60 VcE(s) at V V min max 60 30 30 30 30 6 ■ 5 5 250 100 100 40 500 500 500 500

2N3114

Abstract: P008B
Contextual Info: 2N3114 HIGH VOLTAGE AMPLIFIER DESCRIPTION The 2N3114 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol

2n4929

Contextual Info: 8 1 3 4 6 9 3 SEMICQA _ MD DE | 6]i3Llb ,:i3 □□□□133 p £*7 ~ D \ NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS C ont’d Maximum Ratings Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2NB500 2K3501 2N4926 2N2726 2N2727

2N3114

Contextual Info: MOTOROLA SC X S T RS /R F 1SE D | 1.31,7254 ODflkBOl G | li 2N3114 ' CASE 79-04, STYLE 1 TO-39 TO-205AD M AXIMUM RATINGS Symbol Value U nit Collector-Emitter Vottage(l) VCEO 150 Vdc Collector-Base Voltage VCBO 150 Vdo Emitter-Base Voltage Ve b o S.0 Vdo