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    50N20P Price and Stock

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    Carlo Gavazzi Holding AG ICB18L50N20POM1

    PROX SENSOR IND. M18 PLUG PNP
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    Master Electronics ICB18L50N20POM1
    • 1 $99.36
    • 10 $75.53
    • 100 $75.53
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    Newark ICB18L50N20POM1 Bulk 10
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    • 10 $113.09
    • 100 $101.98
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    RS ICB18L50N20POM1 Bulk 12 Weeks 10
    • 1 -
    • 10 $95.95
    • 100 $91.15
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    TME ICB18L50N20POM1 1
    • 1 $60.28
    • 10 $52.25
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    Neutron USA ICB18L50N20POM1 30
    • 1 $161.56
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    IXYS Corporation IXTQ50N20P

    Mosfet, N-Ch, 200V, 50A, To-3P; |Ixys Semiconductor IXTQ50N20P
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    Newark IXTQ50N20P Bulk 292 1
    • 1 $6.48
    • 10 $5.61
    • 100 $4.00
    • 1000 $3.24
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    TTI IXTQ50N20P Tube 300
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    TME IXTQ50N20P 196 1
    • 1 $6.55
    • 10 $5.52
    • 100 $3.60
    • 1000 $2.95
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    Littelfuse Inc IXTQ50N20P

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; |Littelfuse IXTQ50N20P
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    Newark IXTQ50N20P Bulk 300
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    RS IXTQ50N20P Bulk 8 Weeks 30
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    Littelfuse Inc IXTA50N20P

    Disc Mosfet N-Ch Std-Polar To-263D2/ Tub; |Littelfuse IXTA50N20P
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    Newark IXTA50N20P Bulk 300
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    RS IXTA50N20P Bulk 8 Weeks 50
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    Flip Electronics IXTA50N20P 948
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    IXYS Corporation IXTP50N20P

    Mosfet, N-Ch, 200V, 50A, To-220; |Ixys Semiconductor IXTP50N20P
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    Newark IXTP50N20P Bulk 1
    • 1 $7.63
    • 10 $4.37
    • 100 $3.92
    • 1000 $3.62
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    TTI IXTP50N20P Tube 50
    • 1 -
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    • 100 $3.59
    • 1000 $3.59
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    TME IXTP50N20P 300
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    Find more 50N20P price and stock on Findchips.com

    50N20P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP50N20PM

    Contextual Info: PolarHTTM Power MOSFET IXTP 50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = 200 V = 20 A ≤ 60 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Maximum Ratings OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C


    Original     		50n20pmo-22050n20p02-16-06-e+1ixtp50n20pm PDF

    50N20P

    Abstract: 50n20 50n2
    Contextual Info: PolarHTTM Power MOSFET IXTA 50N20P IXTP 50N20P IXTQ 50N20P VDSS ID25 = 200 V = 50 A ≤ 60 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		50n20po-22050n2050n2 PDF

    50N20P

    Contextual Info: PolarHTTM Power MOSFET IXTQ 50N20P IXTA 50N20P IXTP 50N20P = 200 V = 50 A Ω = 60 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		50n20po-220065b1728b1+1123b1 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF