15N10 Search Results
15N10 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 15N10 | UMW | 100V 15A 50W 80MR@10V,10A 2.5V@2 | Original | 670.48KB | 5 | ||
SK15N10
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Shikues Semiconductor | N-Channel 100V MOSFET, RDS(ON)≦100mΩ@VGS=10V, low RDS(ON), high DC current, medium voltage applications. | Original | ||||
CJU15N10
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JCET Group | N-channel Power MOSFET CJU15N10 with 100V drain-source voltage, 15A continuous drain current, 70mΩ RDS(on) at 10V VGS, featuring low gate charge, fast switching, and avalanche energy rating. | Original | ||||
SL15N10A
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SLKOR | VDS 100V, ID 15A, RDS(ON) at VGS=10V <115mohm, at VGS=4.5V <10mohm, Trench Power MV MOSFET, high density cell, heat dissipation, DC-DC Converters, power management. | Original | ||||
MDD15N10D
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Microdiode Semiconductor | 100V N-Channel Enhancement Mode MOSFET | Original | ||||
HKTD15N10
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Shenzhen Heketai Electronics Co Ltd | N-channel Power MOSFET HKTD15N10 with 100V drain-source voltage, 15A continuous drain current, and 100mΩ maximum RDS(on) at VGS=10V, available in TO-252 package. | Original | ||||
SLD_U15N10T
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Maplesemi | N-channel 100V 15A Power MOSFET with RDS(on) of 95mΩ at VGS = 10V, advanced TRENCH technology, low Crss, fast switching, and 100% avalanche tested for PWM and power management applications. | Original | ||||
HSU15N10
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Huashuo Semiconductor | N-Ch 100V Fast Switching MOSFET with 15A continuous drain current, 65 mΩ typical RDS(ON), low gate charge, and high cell density trench technology for synchronous buck converter applications. | Original |
15N10 Price and Stock
Walsin Technology Corporation MT15N101J500CTCAP CER 100PF 50V C0G/NP0 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MT15N101J500CT | Tape & Reel | 130,000 | 10,000 |
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Buy Now | |||||
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MT15N101J500CT | Cut Tape | 10,000 | 10 |
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MT15N101J500CT | 10,000 |
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Buy Now | |||||||
Infineon Technologies AG IPT015N10N5ATMA1MOSFET N-CH 100V 300A 8HSOF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPT015N10N5ATMA1 | Tape & Reel | 26,000 | 2,000 |
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IPT015N10N5ATMA1 | Tape & Reel | 98,000 | 18 Weeks | 2,000 |
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IPT015N10N5ATMA1 | 2,598 |
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IPT015N10N5ATMA1 | 1,198 | 1 |
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IPT015N10N5ATMA1 | Tape & Reel | 18,000 | 2,000 |
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IPT015N10N5ATMA1 | Cut Tape | 935 | 0 Weeks, 1 Days | 1 |
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IPT015N10N5ATMA1 | 628,000 | 16 Weeks | 2,000 |
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IPT015N10N5ATMA1 | 4,000 | 2,000 |
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IPT015N10N5ATMA1 | 19,000 | 1 |
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IPT015N10N5ATMA1 | 94,480 |
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Walsin Technology Corporation HH15N100J500CTCAP CER 10PF 50V C0G/NP0 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HH15N100J500CT | Cut Tape | 22,394 | 1 |
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HH15N100J500CT | 1 |
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Renesas Electronics Corporation RBE015N10R1SZQ4-GB0POWER:POWER MOSFETS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RBE015N10R1SZQ4-GB0 | Cut Tape | 1,987 | 1 |
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STMicroelectronics STH315N10F7-6MOSFET N-CH 100V 180A H2PAK-6 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STH315N10F7-6 | Cut Tape | 1,829 | 1 |
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STH315N10F7-6 | Tape & Reel | 26 Weeks | 1,000 |
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STH315N10F7-6 | 3,082 |
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STH315N10F7-6 | 3,082 | 1 |
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STH315N10F7-6 | 4,000 | 27 Weeks | 1,000 |
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STH315N10F7-6 | 27 Weeks | 1,000 |
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STH315N10F7-6 | 19,000 | 1,000 |
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15N10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Advanced Technical Information IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol Test Conditions VCES IC25 VCE sat tfi(typ) =1000 V = 30 A = 3.8 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 |
Original |
15N100C O-220AB O-263 | |
15N100C
Abstract: 15n10 TO-263AA IXGp 15N100C TO-220 footprint
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15N100C O-220AB O-263 728B1 15N100C 15n10 TO-263AA IXGp 15N100C TO-220 footprint | |
15n10Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW |
Original |
15N100Q 15N100Q O-247 O-268 O-268AA 15n10 | |
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Contextual Info: IGBT IXGA 15N100C IXGP 15N100C Lightspeed Series Symbol VCES IC25 VCE sat tfi(typ) Test Conditions =1000 V = 30 A = 3.5 V = 115 ns Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM |
Original |
15N100C O-220AB O-263 728B1 | |
15N100Q
Abstract: 15n10 15N100 IXFH15N100Q
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15N100Q O-247 15N100Q 15n10 15N100 IXFH15N100Q | |
15n10
Abstract: 15N100C 15N100
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15N100C O-220AB O-263 15n10 15N100C 15N100 | |
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Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW |
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15N100Q 15N100Q O-247 O-268 O-268AA | |
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Contextual Info: Advanced Technical Information IXGA 15N100C IXGP 15N100C IGBT Lightspeed Series VCES IC25 VCE sat = = = = tfi(typ) 1000 V 30 A 3.5 V 115 ns TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW |
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15N100C 15N100C O-220AB O-263 | |
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Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C |
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15N100C 15N100C O-268 O-247 O-268AA | |
15N100
Abstract: IXTN 79 N 20 IXTN15N100
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15N100 OT-227 15N100 IXTN 79 N 20 IXTN15N100 | |
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Contextual Info: Advanced Technical Information IXGH 15N100C IXGT 15N100C IGBT Lightspeed Series Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C |
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15N100C 15N100C O-268 O-247 O-268AA | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class 1000 V 15 A 0.7 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD IXFH Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C |
Original |
15N100Q O-247 | |
15N100Contextual Info: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A |
OCR Scan |
15N100 OT-227 Cto150 C2-90 C2-91 15N100 | |
15n10
Abstract: 15N100 15N100Q IXFH15N100Q
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15N100Q O-247 15n10 15N100 15N100Q IXFH15N100Q | |
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1SN10Contextual Info: IXYS 15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs |
OCR Scan |
IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10 | |
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Contextual Info: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings |
OCR Scan |
IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 O-247 to150 | |
D1488
Abstract: TO-247 AD
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OCR Scan |
IXFH/IXFT/IXFX14 IXFH/IXFT/IXFX15 10TransientThermallmpedance D1488 TO-247 AD | |
ssq21635
Abstract: MS3147 06324 Glenair 407 as 048 MS3137 EN3645 ms3451 NATC06 GR2120-X-X-X-XXSN MS3406 06324 connector
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M85049 AS85049 specificaAS85049/103 AS85049/104 AS85049/105 AS85049/109 AS85049/111 AS85049/112 ssq21635 MS3147 06324 Glenair 407 as 048 MS3137 EN3645 ms3451 NATC06 GR2120-X-X-X-XXSN MS3406 06324 connector | |
SSD15N10
Abstract: MosFET 15N10
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SSD15N10 O-252 SSD15N10 15N10 07-Mar-2013 MosFET 15N10 | |
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Contextual Info: TOKO AMERICA INC FMK S^E ]> m ? b 3 2 0002533 T2 2 • TAI TOKO Series DC-DC Converters ■ OVERVIEW TOKO’s engineers designed these converter modules with primary emphasis on small size, lightweight and low cost. Conversion efficiencies of up to 75%. These non-floating type converters were developed for |
OCR Scan |
TDb7b32 | |
15N100
Abstract: 15n10 14N100
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OCR Scan |
IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 14N100 15N100 15N100 O-247 247TM 15n10 | |
AS85049/31, MS3416 and MIL-DTL-85723/15NContextual Info: AS85049 AS85049/31, MS3416 and MIL-DTL-85723/15N Self-Locking and Non-Self-Locking E-Nut Finish A = Anodize, Black N = Electroless Nickel W = 1,000 Hour Cadmium Olive Drab over Electroless Nickel X = Nickel Fluorocarbon Polymer Y = Pure Dense Electrodeposited |
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AS85049 AS85049/31, MS3416 MIL-DTL-85723/15N AS50151 AS34001 MIL-DTL-26482 AS81703 MIL-DTL-83723 AS85049/31, MS3416 and MIL-DTL-85723/15N | |
15N100Contextual Info: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings |
OCR Scan |
IXFH/IXFX15 14N100 15N100 K30Ts | |
75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
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OCR Scan |
76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B | |