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    38N100 Search Results

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    38N100 Price and Stock

    IXYS Corporation

    IXYS Corporation IXFN38N100P

    MOSFET N-CH 1000V 38A SOT-227B
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    DigiKey IXFN38N100P Tube 86 1
    • 1 $57.67
    • 10 $43.85
    • 100 $40.02
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    Mouser Electronics () IXFN38N100P 378
    • 1 $57.67
    • 10 $46.41
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    IXFN38N100P
    • 1 $57.67
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    TTI IXFN38N100P Tube 300
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    TME IXFN38N100P 1
    • 1 $45.39
    • 10 $42.53
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    IXYS Corporation IXFL38N100P

    MOSFET N-CH 1000V 29A I5PAK
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    DigiKey IXFL38N100P Tube 300
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    Mouser Electronics () IXFL38N100P
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    IXFL38N100P
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    TTI IXFL38N100P Tube 300
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    Bristol Electronics IXFL38N100P 49
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    TME IXFL38N100P 22 1
    • 1 $12.29
    • 10 $12.29
    • 100 $12.29
    • 1000 $12.29
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    IXYS Corporation IXFL38N100Q2

    MOSFET N-CH 1000V 29A ISOPLUS264
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    DigiKey IXFL38N100Q2 Tube 300
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    IXYS Corporation IXFN38N100Q2

    MOSFET N-CH 1000V 38A SOT-227
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    IXYS Corporation IXFB38N100Q2

    MOSFETs 38 Amps 1000V 0.25 Rds
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    38N100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    38N100Q

    Abstract: 98949
    Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		38N100Q 264TM 150ited 728B1 38N100Q 98949 PDF

    38N100Q2

    Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = 1000 V V DSS ID25 = 38 A RDS on = 0.26 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		38N100Q2 264TM 728B1 38N100Q2 PDF

    38N100Q2

    Contextual Info: IXFL 38N100Q2 HiPerFETTM Power MOSFETs IXFL 38N100Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		38N100Q2 38N100Q2 PDF

    Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 38N100Q2 VDSS = 1000 V ID25 = 38 A RDS on = 0.26 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions


    Original     		38N100Q2 264TM 728B1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF