TO247AE Search Results

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

Contextual Info: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

TP12N10

Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ16010 Designer's Data Sheet MJW16010 SWITCHMODE Series NPN Silicon Power Transistors MJ16012* These transistors are designed for high-voltage, high-speed, power switching in

MJ16010

Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
Contextual Info: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in

14N50E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTW14N50E TMOS E-FET ™ Power Field Effect Transistor TO -247 with Isolated Mounting Hole M o to ro la P re fe rre d D e v ic e TM O S PO W ER FET 14 A M P E R E S 5 0 0 VO LTS N-Channel Enhancement-Mode Silicon Gate

transistor rc 3866

Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JP tM M IM M A IM M M F 1 M M l* aa M JI1M 04) • W f U M H w H M llD N I M P I M M U m M JM M M I SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors M JW 16212* The MJW16212 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It

ex 3863

Abstract: MJf16206
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use In horizontal deflection

mj16010

Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r

16N40E

Abstract: high power pulse generator with mosfet mosfet 16n 15
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TW 16N 40E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POW ER FET 16 AMPERES 400 VOLTS RDS on = 0.24 OHM N-Channel Enhancement-Mode Silicon Gate

MGW40N60U

Abstract: TO247AE
Contextual Info: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MGW40N60UID DATA F Product Preview Data Sheet insulated Gate Bipolar mansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

tme 126

Abstract: transistor TT 2442 MGW12N120D 3EML
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged

MJF16206

Abstract: MTP12N10 pin configuration MJH16206 transistor D 1557 K1194 MJW16206 MPF930 TMJE210 ci mc7812 MC1391P
Contextual Info: MOTOROLA SC X S T R S / R F 4bE b3b7254 D 00^3470 3 T -3 2 > -O i IflOTb Order this data sheet by MJF16206/D MOTOROLA •i SEMICONDUCTOR m TECHNICAL DATA MJF16206 MJH16206 MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors

MTW8N50E

Abstract: MOTOROLA N-Channel MOSFET motorola power FET
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • b3b?SSH DG' I ßfi a? SSb ■ MOTb M OTOROLA ■i SEMICONDUCTOR TECHNICAL DATA Advance Information MTW8N50E TMOS E-FET Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancem ent-Mode Silicon G ate

12n120

Abstract: TO247AE
Contextual Info: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage

Contextual Info: roducts., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ16110* MJW16110* Designer's Data Sheet NPN Silicon Power Transistors SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

TRANSISTOR BC 545

Abstract: amperes transistor BC 550 TRANSISTOR BC 530 transistor BC 338 transistor BC 2500 MOTOROLA N-Channel MOSFET AN569 MTW33N10E transistor Bc 287 MOTOROLA TRANSISTOR 726
Contextual Info: MOTOROLA Order this document by MTW33N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet EĆFET. Designer's TMOS MTW33N10E Power Field Effect Transistor Motorola Preferred Device TOĆ247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 12N 120D In su late d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

20N120

Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 20 N 120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced

transponder car key c4

Abstract: 3528 pwm 20 PINS ll4148 footprint LC1 D12 10 Immobilizer Base station immobilizer in car operation PG306001 car ignition circuit diagram immobilizer antenna CAR KEY CON16A
Contextual Info: HCS410 Evaluation Kit User’s Guide Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip

TMOS E-FET

Abstract: MTW6N60E
Contextual Info: MOTOROLA SC CXSTRS/R F bfl E ]> • b3b?254 QG^fiflBS GÖ3 « I I O T h M OTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information M TW 6N 60E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-M ode Silicon G ate

30N60

Abstract: w30n60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW30N60 Insulated Gate Bipolar Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This In su la ted G a te B ip o la r T ra n sisto r IG B T u ses an adva n ce d

P6302

Abstract: transistor equivalent table TL 3849 AN952
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet *M otoroii P rtfe rrtd D avtc* NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for