P6302 Search Results

Contextual Info: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA M JH 16006A D esigner’s Data Sheet NPN Silicon Pow er Transistor POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS 1 kV SWITCHMODE Series T hese transisto rs are d e sig n e d for h ig h -v o lta g e , h ig h -s p e e d , po w e r sw itch ing in

UJT 2N2646

Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
Contextual Info: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

EAKD

Abstract: BUW12A
Contextual Info: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc­

MJ16010

Abstract: bi 370 transistor MJ16012 ssf transistor MJ16012 MOTOROLA RSS2 IC 7403 2N6191 AM503 MJW16010
Contextual Info: MOTOROLA Order this document by MJ16010/D SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 D esigner’s Data Sheet SW ITCHM ODE S eries NPN S ilicon Pow er Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in

MJH16018

Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
Contextual Info: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 | 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc­

mj16010

Abstract: MJ16012 MJ16012 MOTOROLA MJ16012 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16010 M JW 16010 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors M J16012* These transistors are designed for high-voltage, high-speed, power switching in In d u c tiv e c irc u its w h e re fa ll tim e is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r

p6302

Abstract: MJH16010
Contextual Info: MOTOROLA SC X STR S/R 1SE D I F b 3 b ?2 5 4 0 0 0 5 2 0 3 t. | -7 = 3 3 -/^ T ~ & ii MJ16010 MJH16010 Ml 16012 MJH16012 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D a ta S h e e t 15 A M P E R E SW ITCH M O D E III S E R IE S NPN SILIC O N POW ER T R A N S IS TO R S

2n3773 b2

Abstract: SDT9207 "cross reference" equivalent bu808 2SC1030 "cross reference" bd139 equivalent MJ3001 equivalent MJE371 equivalent D45H11 equivalent replacement bd433 buv20 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16018* MJW16018*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device 1.5 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

MJH16032

Abstract: MJE16032 MJH16034 P6302 circuit 7403 u3 AM503 MJE16034 mje16
Contextual Info: MQTORCLA SC XSTRS/R F 12E 0 § b3fc,7SS4 000542=1 T | T -3 S -I3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16032 MJ E 16034 MJH16032 MJH16034 Designer's Data Sheet IMPIM Silicon Power Transistors Switchmode III Series T h e se tra n s is to rs are d esig n e d fo r h ig h -vo ltag e, hig h -sp eed , p o w e r s w itc h in g in in d u c­

2N6191

Abstract: 2N5337 IC 7403 AM503 MJE1320 MR856 P6302
Contextual Info: ON Semiconductort NPN Silicon Power Transistor MJE1320 SWITCHMODEt Series POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated SWITCHMODE

MJ16010

Abstract: MJ16012 p6302 IC 7403 2N6191 MJW16010 MJW16012 AM503 mj16
Contextual Info: ON Semiconductort MJ16010 SWITCHMODEt Series NPN Silicon Power Transistors MJW16010 MJ16012 * These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL .jír ^ TS » r i B i l ñ S T O OOOB144 S EMI CON DU CT OR General Semiconductor . Industries, Inc. 95D 02144 D 15 Am p NPN 300, 350, 400V 2N6653, 54, 55 SQ U H BEn COMPANY X G SR 15030,35,40 C 2R H IG H SPEED /H IG H PO W ER SW ITCH IN G T R A N S IS T O R S

Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

MTP12N10 pin configuration

Abstract: PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in

MTP12N10 pin configuration

Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

2N6654

Abstract: 2N66S5 P6302 2N6655 2n6653 XGSR15040-I
Contextual Info: ^ % ^ General Semiconductor . Industries, Inc. 15 A m p N P N 300. 350. 40 0 V 2 N 6 6 5 3 , 54, 55 XG S R 1 5030. 35. 40 X G S R 1 5 0 3 0 - I . 35-I. 40-I C 2R H IG H S P E E D /H IG H POW ER S W IT C H IN G T R A N S IS T O R S The XGSR series is an NPN double diffused epitaxial transistor designed for high speed switching

tc4500

Abstract: MJ16018
Contextual Info: ON Semiconductort MJ16018 * MJW16018 * NPN Silicon Power Transistors 1.5 kV SWITCHMODEt Series *Not Recommended for New Design These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are

MR918

Abstract: MTP8P10 Motorola mr918 AM503 MJE210 MJH16006A MPF930 MTP12N10 MUR105 P6302
Contextual Info: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A  Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for

AMs03

Abstract: BU1008AF C4815 BU1008ADF p6302 AM503 AN1040 BU100
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b72SM QDS37Ô3 2 noTb Order this data sheet by BU1008AF/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BU1008AF BU1008ADF Full Pak NPN Silicon Power Transistors Horizontal Deflection . . . specifically designed fo r use in large screen color T V deflection circuits o peratin g at

MR918

Abstract: MJ16006A MJH16006A tektronix 475 IC 7403 MTP8P10 AM503 MJE210 MPF930 MTP12N10
Contextual Info: ON Semiconductort NPN Silicon Power Transistor MJH16006A 1 kV SWITCHMODEt Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.

P6302

Abstract: transistor equivalent table TL 3849 AN952
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet *M otoroii P rtfe rrtd D avtc* NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for

MJ802 EQUIVALENT

Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •

UJT 2N2646 specification

Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have