6006A Search Results

60-06A

Abstract: DSEP30-06A DSEC60-06A
Contextual Info: DSEC 60-06A DSEC 60-06B HiPerFREDTM Epitaxial Diode IFAV = 2x 30 A VRRM = 600 V trr = 30/35 ns with common cathode and soft recovery VRSM VRRM V V 600 600 600 600 TO-247 AD Type DSEC 60-06A DSEC 60-06B A C A C A A C TAB A = Anode, C = Cathode, TAB = Cathode

IXYS DSEI60-06A

Abstract: circuit motor forward reverse control power recovery diode SMPS 30 60-06A DSEI60-06A
Contextual Info: Datum 971211 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

jd 1801 data sheet

Abstract: AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − August 31, 2003 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A IM3−2.1 FZEF SOT23−3 MAX 809L UR AA SOT23−3 LM

Contextual Info: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 600 VRRM Type C IFAVM = 60 A VRRM = 600 V = 35 ns trr TO-247 AD V 600 C DSEI 60-06A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5

toshiba laptop schematic diagram

Abstract: acer motherboard circuit diagram MAX1270 C source code MAX11871 mp 9141 es dc-dc lm324 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic ACER laptop schematic diagram L-band down converter for satellite tuner wideband acer laptop MOTHERBOARD Chip Level MANUAL acer laptop motherboard circuit diagram
Contextual Info: Welcome to the Maxim Full-Line Data Catalog. We hope you find this CD-ROM a helpful tool for selecting the best Maxim IC for your design. This CD-ROM contains: The Maxim Full-Line Data Catalog The menu to the left of this page lists the available documents. Use the small

Contextual Info: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD A DSEI 60-06A DSEI 60-06AT C C TO-268 AA (AT Type) A A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①

Contextual Info: VBE 60-06A Advanced Technical Information IdAV = 60 A VRRM = 600 V = 35 ns trr Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 + Type miniBLOC, SOT-227 B ~ ~ ~ VBE 60-06A + – – Symbol Conditions Maximum Ratings

60-06A

Abstract: 60N60C2D1 60N60C2D IF110 PLUS247
Contextual Info: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM

DSEI60-06A

Abstract: dse*60-06A ixys dsei 60-06 IXYS DSEI60-06A DSEI60-06 dsei 60-06 DSEI 12 06A 60-06A ixys dsei 8
Contextual Info: DSEI60-06A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type IFAV = 60 A VRRM = 600 V trr = 35 ns A C DSEI 60-06A TO-247 AD C A  C A = Anode, C = Cathode Symbol IFRMS IFAVM  IFSM I2t Conditions Maximum Ratings TC = 70°C; rectangular, d = 0.5

Dsei 2x101-12A

Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Contextual Info: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000

rectifier bridge 300v 30a

Abstract: 60-06A 2X31-06A
Contextual Info: VBE 60-06A Advanced Technical Information IdAV = 60 A VRRM = 600 V trr = 35 ns Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 + Type miniBLOC, SOT-227 B ~ ~ ~ VBE 60-06A + – – Symbol Conditions Maximum Ratings

1n53838

Abstract: BZV48C ZENER 1N4 BZY97-C2V7 ZENER 1N5 BZX61 Z500-1 BZV40C ZX85C Z500-21
Contextual Info: ZENER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1/4 M 2 .4 A Z 10 1/4 M 2 .7 A Z 10 1/4 M 3 .0 A Z 10 1/4 M 3 .3 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .9 A Z 10 1/4 M4 .3 A Z 10 1/4 M4 .7 A Z 10 1/4 M 5.1 A Z 10 1/4 M5 .6 A Z 10 1/4 M6 .2 A Z 10

dsep 2x91-03a

Abstract: DSEC 240-04A DSEP 2X31-12A dsep 12-12a 2x61-06A
Contextual Info: 3= J- HiPerFRED Diodes Kl V RRM '1f a v @ T1 c d=0.5 V ► N ew K3 DSEP. DSEE. lFAV = 8 - 2x120 A Type T ^FSM VF @ 10 ms m ax. A °C 45°C A V lF = 150°C A t rr ^RM @ - d i / d t typ- typ. TVJ=25 °C ns A T V, DSEC. ^VJM ^thJC DSEP 2x. o = 100°C

db3 c248

Abstract: db3 c235 db3 c244 diode db3 c248 db3 c227 dia db3 c227 DIA db3 c235 DB3 C209 db3 c218 Db3 c601
Contextual Info: AT91RM9200 Development Kit . User Guide Table of Contents Section 1 Overview. 1-1

50N60BD1

Abstract: 60-06A PLUS247 IXGK50N60BD1
Contextual Info: IXGK 50N60BD1 IXGX 50N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75

IXGH50N60BD1-P1

Abstract: ISOPLUS247TM 60N60U1
Contextual Info: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ

IXGX50N60B2D1

Contextual Info: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 50N60B2D1 VCES IXGX 50N60B2D1 IC25 VCE sat B2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES

Contextual Info: DSEI60-06A Fast Recovery Epitaxial Diode FRED TO-247 AD DSEI 60 IFAVM = 60 A VRRM = 600 V = 35 ns trr VRSM V VRRM Type V C 600 600 DSEI 60-06A A A C C A = Anode, C = Cathode Features ● ● ● ● ● ● ● International standard package JEDEC TO-247 AD

Contextual Info: Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode MMIX1X100N60B3H1 Electrically Isolated Tab VCES = 600V IC90 = 60A VCE(sat) ≤ 1.80V Medium-Speed Low-Vsat PT IGBT for 10-30 kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXR100N60B3H1 (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

60N60C2D1

Contextual Info: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM

IXGK50N60C2D1

Contextual Info: HiPerFASTTM High Speed IGBT C2-Class w/ Diode IXGK50N60C2D1 IXGX50N60C2D1 VCES IC110 VCE sat tfi(typ) = = £ = 600V 50A 2.7V 48ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M

Contextual Info: DIXYS DSEI60 Fast Recovery Epitaxial Diode FRED IFAVM V rrm tkrr VR RM v' rsm V 60 A 600 V 35 ns TO-247 AD Type V 600 600 DSEI 60-06A A = Anode, C = Cathode Symbol Test Conditions FRM S TVJ TVJU Tc = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by TVJM