50N60C2 Search Results
50N60C2 Price and Stock
IXYS Corporation IXGT50N60C2IGBTs 50 Amps 600V 2.5 V Rds |
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IXGT50N60C2 |
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IXYS Corporation IXGK50N60C2D1IGBTs 50 Amps 600V 2.5V Rds |
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IXGK50N60C2D1 |
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50N60C2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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50N60C2
Abstract: 50n60 IXGH50N60C2
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Original |
50n60c2ic110o-247o-268+2 | |
2X61 06a
Abstract: ISOPLUS247
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Original |
50n60c250n60c2d1ic1102x61-06a+5 | |
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Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60C2D1 VCES IXGX 50N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) = 600 V = 75 A = 2.5 V = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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50n60c2d1ic110if1100-06a | |
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Contextual Info: HiPerFAST TM IGBT with Diode IXGR 50N60C2 IXGR 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE sat tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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50n60c250n60c2d1ic110isoplus247+4 | |
IXGX50N60C2D1
Abstract: 50N60C2D1 50n60 60-06A IF110 PLUS247 HIPERFAST
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50n60c2d1ic110if1100-06a+5 | |
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Contextual Info: HiPerFAST TM IGBT with Diode IXGR 50N60C2 IXGR 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE sat tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
Original |
50n60c250n60c2d1ic1102x61-06a+3 | |
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Contextual Info: HiPerFAST TM IGBT with Diode IXGK 50N60C2D1 VCES IXGX 50N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) = 600 V = 75 A = 2.5 V = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
Original |
50n60c2d1ic110if110o-264+2 | |
ems 505
Abstract: PLUS247 IXGX50N60C2D1 HIPERFAST IGBT WITH DIODE
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50n60c2d1ic1102x61-06a728b1+6 | |
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Contextual Info: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
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50n60c2ic110o-247o-268 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 |