EAKD Search Results

2N5969

Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
Contextual Info: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20

TSA170

Abstract: TSA47 tsa-43
Contextual Info: 14. SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS TSA6.8 THRU TSA200 400 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMB BR EAKD O W N VOLTAG E DEVICE TYPE TSA6.8 V BR VOLTS NOM. ; - IT mA W O RKING PEAK REV. VOLTAG E (VRWM) VOLTS MAX. REV. LE AK A G E

block diagram for vhdl based barrel shifter

Abstract: multiplier accumulator unit with VHDL 256K DPRAM vhdl code for barrel shifter vhdl code for accumulator 16 bit single cycle mips vhdl barrel shifter code vhdl vhdl code for alu low power vhdl code for FFT vhdl code for speech processing
Contextual Info: S YSTEM L EVEL I NTEGRATION EMBEDDED T EAKDSPCORE SYSTEM Syste m Clo Flash /R Prog OM ram SR Work AM spac e Data In/Ou t ck So urce Mast e Clock r EEPR OM Data Emb Micro edded contr Core oller Cach Mem e ory Micro co Perip ntroller herals Data In/Ou t Teak

SD-5410-3

Abstract: SD-5410-1 Phototransistor with base emitter SD-2410-1 SD-2410-2 SD-2410-3 SD-3410-1 SD-3410-2 SD-3410-3 SD-3410-4
Contextual Info: WAVELENGTH, nanometers FIGURE 1. SPECTRAL RESPONSIVITY PHOTODARLINGTONS SILICON OPTICAL/ELECTRICAL CHARACTERISTICS (25°C) PARAM ETER LIG H T CURR EN T DARK C U RR EN T CO LLECTO R BR EAKDO W N E M IT T E R BR EA KD O W N L IG H T C U R R EN T RISE TIM E

tsc170

Abstract: EAKD TSC110 TSC51 TSC6 TSC180 TSC150 TSC18
Contextual Info: TSC6.8 THRU TSC200 1500 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMC BR EAKD O W N VOLTAG E DEVICE TYPE V BR VOLTS NOM. •" IT mA W O RKING PEAK REV. VOLTAG E (VRWM) VOLTS M AX. REV. LEA K A G E a t VRW M dr) m icroa m p s M AX. PEAK REV. SURGE CURRENT

2n6324

Abstract: 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6325 2N6326 2N6327
Contextual Info: ^ 1 1 * II BR EAKDON /VIM V OLTAGE S hrE SAI VOLTA kGES <M ax. * < n —' m NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST <C A) 2N6280 TO-63 160 140 6 4 20 30 120 20 2 1.2 2 2N6281 TO-63 180 150 6 4 20 30 120 20 2 1.2 2 2N6315 TO-66 60 60

SB68

Abstract: TSB130 kd 502 tsb20 EAKD
Contextual Info: TSB6.8 THRU TSB180 600 WATT SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS SMB BR EAKD O W N VOLTAG E DEVICE TYPE V BR VOLTS NOM. - IT mA W O RKING PEAK REV. V O LTAG E (VRWM) VO LTS M AX. REV. LEA K AG E a t VR W M (Ir) m icroa m p s M A X . PEAK REV. SURGE

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

Contextual Info: TIM7785-30SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 45 dBm at 7.7 GHz to 8.5 GHz ■ HIGH EFFICIENCY 77 add = 34 % at 7.7 GHz to 8.5 GHz ■ HIGH GAIN G-idB = 6.0dB at 7.7 GHz to 8.5 GHz

Contextual Info: _diode2014-02.ec9 Page:18 Date: 2014/01/30 Thu 16:49:51 Si ngl eZenerDi ode PowerZenerDi ode •外観図 ST02120F1 OUTLI NE Package：1F 120V t ：mm Uni 特 長 煙１ Wクラス 煙小型 SMD 煙車載用途も対応可能 U1 00 00 ① 品名略号 Type No.

B1470

Abstract: FS10KM-5 FS10KM5 K775 MAX240 30hm marking mitsubishi st Z3J MITSUBISHI MOSFET FS
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-5 HIGH-SPEED SWITCHING USE FS10KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ±0.2 4» • V d s s . -2 5 0 V • rDS ON (MAX) . 0.52Q

JE13070

Contextual Info: File Number 1841 MJE13070, MJE13071 HARRIS SErilCOND SECTOR 5bE Î • 4302271 ODMGÒTl 3Tb H H A S 7 ^ 3 5 -/? 5-A S w itchM aif II Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features:

diodo zener 5,6 v

Abstract: in5806 1N5815 Diode IN5815 T5 DIODO Diodo zener W IN5811 1N5663 1N5663A 1N5664
Contextual Info: Zener Type No. 1N5663 1N 5 6 6 3A 1N 5664 1N 5664A Zener Voltage at Izr @ mA Volts MICROSEMI Max. Zener Impedance @ lZr Ohms Zener Voltage Tolerance No Im pedance Specified ” ” ” No S u ffix = 10% S u ffix A = 5% No S u ffix = ± 1 0% " " Power Rating

n4944

Abstract: 1N4942 1N4947 1N4948
Contextual Info: I ttK ^ K - 1 1N4942 thru 1N4948 Microsemi Corp. MILITARY R EC T IFIER S FEATURES • • • • • • • M icrom iniature package. Voidless herm etically sealed glass package. Triple layer passivation. M etallurgically bonded. Fast recovery. PIV to 1,000 volts.

EAKD

Abstract: BUW12A
Contextual Info: MOTOROLA SC XSTRS/R F 1HE D I I b3b?2S4 QüôM'iai 1 I MOTOROLA SE M IC O N D U C T O R TECHNICAL DATA BUW 11,A BUW 12,A Designer's Data Sheet N P N Silicon Pow er Transistors Switchm ode Series These transistors are designed for high-voltage, high-speed, power switching in induc­

etf81

Abstract: etf81-05 transistor x1 pv 25 ETF81-050 M101
Contextual Info: E T F 8 1 - 5 15A Ì / N ? — =EÌs z l —JU —)V /< 7 - l : Outline Drawings 36 POWER TRANSISTOR MODULE 13 F e a tu re s • 7 'J - ii- f U > 9 ¥ 4 • h F E ^ S l' • K r tR -I» Including Free Wheeling Dtode 0 3.5 High DC Current Gain \ 22 1' Insulated Type

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

d45vh

Abstract: D45VH1
Contextual Info: File N um ber 2356 D45VH Series Silicon P-N-P Transistors Complementary to the D44VH Series Features: • Fast S w itc h in g ts < 500 ns resistive tf < 100 ns • L o w ^C E sa f - 1 0 V @ l c ~ 8A TERMINAL DESIGNATIONS T h e D 45V H -series o f s ilic o n p -n -p p o w e r tra n s is to rs are

FP4N100

Contextual Info: RFP4N100 33 HARRIS August 1991 High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors Features Package T O -2 2 0 A B T O P V IE W • 4.3A, 1000V • rDS on = 3 .5 0 • UIS S O A Rating C u rve (Single Pulse) • - 5 5 ° C to + 1 5 0 °C O perating Tem perature

BPW38

Contextual Info: SOLID STATE 01 DE 3 f l 7 5 0 f l l DOnam 2 Optoelectronic Specifications. r - y Light Detector / i s Planar Silicon Photo-Darlington Amplifier BPW38 The GE Solid State BPW38 is a supersensitive NPN Planar Silicon Photodarlington Amplifier. For many applications, only the collector and emitter

40664 SCR

Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE EAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: File N um ber D44VM Series 2351 Silicon N-P-N Transistors Com plementary to the D45VM Series Features: • Fast S w itc h in g ts < 500 ns resistive t f < 75 ns ■ Very L o w VC E sat < 0 . 4 V @ i c = 4A T h e D 44V M -series o f s ilic o n n -p -n p o w e r tra n s is to rs are