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2N5876 Datasheets (35)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5876	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150	Original	PDF	10.97KB	1
2N5876	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF	404.58KB	5
2N5876	API Electronics	Short form transistor data	Short Form	PDF	62.77KB	1
2N5876	Central Semiconductor	Complementary Silicon Power Transistors, TO-3	Scan	PDF	71.72KB	1
2N5876	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF	40.14KB	1
2N5876	Diode Transistor	TO-3 / Various Transistor Selection Guide	Scan	PDF	66.32KB	1
2N5876	Diode Transistor	Transistor Short Form Data	Scan	PDF	79.08KB	1
2N5876	Diode Transistor	Silicon Transistors / TO-63 Transistors	Scan	PDF	78.56KB	1
2N5876	Diode Transistor	Transistor Short Form Data	Scan	PDF	60.83KB	1
2N5876	Diode Transistor	35 to 500V Transistor Selection Guide	Scan	PDF	66.32KB	1
2N5876	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF	43.31KB	1
2N5876	General Transistor	Power Transistor Selection Guide	Scan	PDF	401.54KB	5
2N5876	Mospec	POWER TRANSISTORS(10A,150W) - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150	Scan	PDF	127.4KB	3
2N5876	Mospec	Complementary Silicon High-Power Transistor	Scan	PDF	127.41KB	3

2N5876	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	254.27KB	6
2N5876	Motorola	The European Selection Data Book 1976	Scan	PDF	55.78KB	1
2N5876	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.4KB	1
2N5876	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.56KB	1
2N5876	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	56.61KB	1
2N5876	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	158.5KB	1

2N5876 Price and Stock

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Microchip Technology Inc 2N5876 - Bulk (Alt: 2N5876)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N5876	Bulk		48 Weeks	100	1 - 10 - 100 $43.58 1000 $40.23 10000 $39.72	Buy Now
Newark	2N5876	Bulk			500	1 - 10 - 100 - 1000 $48.33 10000 $48.33	Buy Now
Microchip Technology Inc	2N5876			48 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Onlinecomponents.com	2N5876					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
Master Electronics	2N5876					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
Motorola Semiconductor Products 2N5876 Trans GP BJT PNP 80V 10A 150000mW 3-Pin(2+Tab) TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5876		1		1	1 $16.00 10 $16.00 100 $16.00 1000 $16.00 10000 $16.00	Buy Now
Quest Components ()	2N5876		36			1 $18.90 10 $16.80 100 $15.54 1000 $15.54 10000 $15.54	Buy Now
	2N5876		1			1 $20.00 10 $20.00 100 $20.00 1000 $20.00 10000 $20.00	Buy Now
Texas Instruments 2N5876 Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2N5876		5,144			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N5876 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5875 Abstract: 2N5876 2N5877 2N5878 Contextual Info: SavantIC Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	2n5875 2n5876 2n5877 2n5878	PDF
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247	OCR Scan	2n3789 2n3790 2n3791a 2n3792a +62n4398 2n4399a 2n4901 2n4902 2n4903 2n5683a	PDF
2N5876 Contextual Info: 2N5876 Complementary Silicon High-power Transistor 3.12 Transistors . 1 of 2 Home Part Number: 2N5876 Online Store 2N5876 Diodes C o m plem entary Silico n High- po w er Trans is t o r Transistors Enter code INTER3 at	Original	2n5876 com/2n5876	PDF
2N5878 Abstract: 2N5877 2N5875 2N5876 Contextual Info: SavantIC Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5875 2N5876 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	2n5877 2n5878 2n5875 2n5876	PDF
2n5876 Contextual Info: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS	Original	2n5876 2n5878 o-204aa	PDF
2N5876 Contextual Info: 2N5876 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5876 o204aa 31-jul-02	PDF
2N5876 Abstract: 2N5875 2N5878 2N5877 Contextual Info: ÆAMOS PEC COMPLEMENTARY SILICON PNP 2N5875 2N5876 HIGH-POWER TRANSISTORS General-purpose power amplifier and switching applications NPN 2N5877 2N5878 FEATURES: * Low Collector-Emitter Saturation Voltage v c b s a t = 1.0V Max.)@lc=5.0A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 4.0 A	OCR Scan	2n5875 2n5877 2n5876 2n5878	PDF
2N5877 Abstract: 2N5878 2N5875 2N5876 Contextual Info: Inchange Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	2n5877 2n5878 2n5875 2n5876	PDF
Contextual Info: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.	OCR Scan	2n5875-2n5876 2n5877-2n5878 2n5877 2n5878 +42n5875 2n5876 hfe-10 2n5875/6/7/8	PDF
2N5875 Abstract: 2N5876 2N5877 2N5878 Contextual Info: Inchange Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	2n5875 2n5876 2n5877 2n5878	PDF
l5 transistor PNP Abstract: 2N3792A 2N6330 PNP TRANSISTOR 2N3789 2N3790 2N4398 2N4901 2N4902 2N4903 Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS PNP TO-3 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247	OCR Scan	2n3789 2n3790 2n3791a 2n3792a +82n4398 2n4399a 2n4901 2n4902 2n4903 2n5683a l5 transistor pnp 2n6330 pnp transistor	PDF
Contextual Info: 2N5876 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5876 o204aa 18-jun-02	PDF
2N5876 Abstract: 2N5878 2N5875 2N5877 Contextual Info: Datasheet c c v n iD i Semiconductor Corp. 2N5875 2N5876 PNP 2N5877 2N5878 NPN C O M P L EMENTARY SILICON POWER TRANSISTORS 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	2n5875 2n5876 2n5877 2n5878 +1200ma	PDF
2N5876 Contextual Info: ISCFdÈ‹¾Ñ ‹¾Ñ text/html About News keyword search: Contact Employment Site Home part number search: 2N5876 #23870 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating	Original	2n5876	PDF

2n5875 motorola Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876 Contextual Info: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 \| 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	OCR Scan	2n5875 2n5876 2n5877 2n5878 +22n5875 motorola 2n5875 2n5876	PDF
2n5878 Abstract: 2N5876 Contextual Info: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS	Original	2n5876 2n5878 o-204aa	PDF
Contextual Info: 2N5876 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5876 o204aa 16-jul-02	PDF
Contextual Info: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS	Original	2n5876 2n5878 o-204aa	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	ic hxj 2038 1n52398 db5t tfk 102 cny 70 +6hxj 2038 rca 40361 transistor rca 40362 tfk 680 cny 70 diode equivalent 1n34a 2n5952 equivalent	PDF
2N5866 Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447 Contextual Info: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75	OCR Scan	5-500v 2n1487 2n1488 2n1489 +152n1490 5n5883 2n5886 2n5884 2n5929 2n5930 2n5866 2n4348 semiconductor 212s 2n5675 2n5867 2n5872 nes 2n5672 2n5038 2n3447	PDF
Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10	OCR Scan	5-500v 2n3773 2n3788 2n3902 +62n4070 2n4071 2n4347 2n4348 2n4913 2n1487	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2sc429gtm 2sc458 2sc458lg 2sc503 +162sc504 2sc510 2sc512 2sc519 2sc520a 2sc594 sn76131 tlo72cp toshiba 2n3055 m53207p 2n3055 toshiba kia7313ap kia7640ap la5530 m5l8155p tbb1458b	PDF
transistor 40411 Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025030 .025 @30 .025@30 .025’ @30 .20 @30	OCR Scan	tc-25 2n1487 2n1488 2n1489 +102n1490 2n1702 2n3442 2n4347 2n3715 2n3791 transistor 40411 2n5867 2n6258 40411 transistor	PDF
2u 62 diode Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19 Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15	Original	bd610 bds11 bds14 2sd213 +152n5006 2n5007 2n5623 2n5624 2sa746 2sa877 2u 62 diode 2sc1115 bd313 kt808bm sdt7603 2u 87 diode 2u 45 diode diode 2u 66 bdy19	PDF

2N5876 Search Results

2N5876 Datasheets (35)

2N5876 Price and Stock

Microchip Technology Inc 2N5876

Motorola Semiconductor Products 2N5876

Texas Instruments 2N5876

2N5876 Datasheets Context Search

2N5875

2N5876

2N5878

2n5876

2N5876

2N5876

2N5877

2N5875

l5 transistor PNP

2N5876

2N5876

2n5875 motorola

2n5878

IC HXJ 2038

2N5866

sn76131

transistor 40411

2u 62 diode