ETF81 Search Results

ETF81-050

Abstract: etf81 M101 transistor ac 050
Contextual Info: ETF81-050 15A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： ﾌﾘｰﾎｲﾘﾝｸﾞﾀﾞｲｵｰﾄﾞ 内臓 Including Free Wheeling Diode

EVM31-050

Abstract: IC M605 EVM31-050A m605 EVL31-050 6DI15A-120 EVF31T-050 ETK8505 EVF31T-050A 2di75
Contextual Info: /\°7 —T'VS 'f ÿt / Power Devices /s9- b y > y X ^ ^ y j. — Jl' 600V?7X 3 Power Transistor Modules /N°7-h7 > v 7 ^ ï ' > ' 2 - ^ 3-terminal type 600 volts class power transistor modules » £ Device type ETF81-050 EVG31-050A ETG81-050A ETK81-050 EVK31-050

Contextual Info: ETF81-050 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N V(BR)CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC) h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)15

ETF81-050

Abstract: etf81 DIODE mur 120 rl 30S3 M101 T151
Contextual Info: ETF81-050 15A ± /< 7 — s < r7 — Y :7 > i S X 9 1Z ' > = L — J l' )U I O utline Drawings POWER TRAN SISTO R MODULE • 4M t I F e a tu re s KrtBI • 7 l) — f t 4 V > 7 9 * 4 • h F E ^ S i^ • Including Free W heeling Dtode High DC Current Gam

6v motor

Abstract: E82988 ETF81-050
Contextual Info: ETF81-050 15A ± / < 7 — )U I Outline Drawings s < r7 — Y :7 > i S X 9 1Z ' > = L — J l ' POWER TRANSISTOR MODULE • 4M t I Fe a tu re s V • 7 l) — ft 4 • h F E ^ S i^ • KrtBI Including Free W heeling Dtode > 79 *4 High D C Current Gam Insulated Type

ETF-8103

Abstract: TQ8103 TQ8103-Q TQ8105 passive loopthrough
Contextual Info: R I Q U I N T S E M I C O N D U C T O R, I N C . The TQ8103 is a monolithic clock and data recovery CDR IC that receives NRZ data, extracts the high-speed clock, and presents the separated data and clock as its outputs. This device is designed specifically for SONET

etn85

Contextual Info: BIPOLAR TRANSISTOR MODULES Ratings and Specifications 600 volts class p o w e r tran sisto r m odules • • • • P o w e r t r a n s i s t o r s a n d free w h e e l d i o d e s a i e b ui lt i nt o o n e pack age . A l l t e r m i n a l s ar e i n s u l a t e d f i o i n m o u n t i n g p l at e.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

Contextual Info: R I 1 Q Q U & I N S E M I C O N D U C T O R , I N C T ÎI The TQ8103 is a monolithic clock and data recovery CDR IC that receives TQ8103 NRZ data, extracts the high-speed clock, and presents the separated data OC-12 and SDH STM-4 applications at 622 Mb/s.

Contextual Info: R I Q U 7 T S E M I C O N D U C T O R , I N C TQSli Typical SONET/SDH system applications for the TQ8103 include: Transmission system transport cards • Switch and cross-connect line cards • A T M physical layer interfaces • Test equipment • Add/drop multiplexers

MQUAD

Abstract: ETF-8103 TQ8103 TQ8103-Q TQ8105 S14R6 S14-R
Contextual Info: T fí I Q U I N T S E M I C O N D U C T O R , I N C T O S t TQ8103 General Description its on-chip phase-locked loop PLL generates a stable 622.08 Mb/s reference based upon an external 38.88 MHz TTL reference. The PLL is based on a VCO constructed from integrated reactive

Contextual Info: T fí I Q U I N T S E M I C O N D U C T O R , I N C TB Ü I TQ8103 General Description Its on-chip phase-locked loop PLL generates a stable 622.08 Mb/s reference based upon an external 38.88 MHzTTL reference. The PLL is based on a VCO constructed from integrated reactive

2D175D

Abstract: 2D175D-055A ETF81-050 ETN81-055 EVL32-055 M104 M105 M203 M208 EVK31-050
Contextual Info: O BIPOLAR TRANSISTOR MODULES Ratings and Specifications g y j 600 volts class pow er transistor modules • • • • P o w e r transistors and fre e w h e el diodes are b uilt into one package. All te rm in a ls are insulated fro m m o u n tin g plate.

C4977

Abstract: 2SD111 C2656 EVK31-050 1di75 D1072 9212S C2438 c3317 2di75
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications Alphanum erical index Typ e Page Gr Ne ET127 ET 188 ET 190 ET191 E T206 11 11 10 10 10 11 11 8 8 9 E T365 E T 36 6 ET367 10 10 11 8 10 E T375 ET378 E T382 E T383 10 10 9 10 8 H / 9 E T385 E T386 10 10 H 8 ET391

EVK31-050

Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
Contextual Info: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr

Contextual Info: R I Q U TQSli 7 T S E M I C O N D U C T O R , I N C T Q 8 1 0 5 /8 1 0 6 PRELIMINARY DATA SHEET TQ8105 Qr TQ8106 SONET/SDH Transceiver Reference Clock TE LEC O M SONET/SDH Transceivers Features SONET/SDH Overhead Processor TQ8106 SONET/SDH Transceiver with C DR

ETN81-055

Abstract: EVM31-050A 2DI75D-050A 2DI300A-050 ETF81-050 2DI75D-055A EVK31-050 2DI240A-055 EVL31-050 1DI240A-055
Contextual Info: S m • • • • BIPOLAR TRANSISTOR MODULES Ratings and Specifications 600 volts class pow er transistor modules P o w e r transistors and fre e w h e e l diodes are built into one package. All te rm in a ls are insulated fro m m o u n tin g plate. Suited fo r m o to r control ap p licatio n s w ith 220 to 240 volts inputs.

100E-120

Abstract: EVK75-050 1DI150E120 m201 EVM31-050A 1di50 1di75 1di15 1di100 1di150
Contextual Info: Transistor Modules COL L ME R S E M I C O N D U C T O R INC HflE » • 2E367&#39;12 D O O l b l O 37T « C O L T 'V i-iS 23 1200 volts class power transistor modules for DC chopper • Best suited fo r m o to r control ap p licatio n s using a ch o pp er co n ve rter