2SC4510R
Abstract: ET127 ET-190 et190 ringing choke converter
Contextual Info: • /\°7 — x / W X / Power Devices # 1 Ir^ lt / \°7 — £ — U > K > h "7 > v JX. £ m s£ Devic«type 2SD833 2SD916 ET378 2SD834 2SD1073 2SD835 2SD1072 2SD1071 ET375 ET190 ET191 VcBO V £0 Power darlington transistors Ic -,$£5 Cont. Amps. Watts <Mm.
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2sd8332sd916et3782sd834+102sd10732sd8352sd10722sd1071et375et1902sc4510ret127et-190ringing choke converter
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transistor ET191
Abstract: ET-191 ET191 SC-65
Contextual Info: ET191 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High D.C. current gain High reliability Applications Switching regulators General purpose power amplifiers JEDEC EIAJ 種 機 Maximum ratings and characteristic
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et191200ma240ma-240ma+3transistor et191et-191sc-65
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ET191
Abstract: ET-191 t930 A-213 SC-65
Contextual Info: ET191 E ± ' < r7 - h :7 > ' > t Z ? TRIPLE D IFFU SED PLANER TYPE POW ER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING aw s, : Outline Drawings / 3 .2 ‘0I • W f i 1 Features • ffl High D .C . current gain • S fffU të High reliability 1.6 i Applications
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et191sc-65i95t/r89et-191+2t930a-213
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transistor ET191
Abstract: ET-191 ET191 SC-65
Contextual Info: ET191 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High D.C. current gain High reliability Applications Switching regulators General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristic
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et191sc-65200ma240ma+3-240matransistor et191et-191
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C4977
Abstract: 2SD111 C2656 EVK31-050 1di75 D1072 9212S C2438 c3317 2di75
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications Alphanum erical index Typ e Page Gr Ne ET127 ET 188 ET 190 ET191 E T206 11 11 10 10 10 11 11 8 8 9 E T365 E T 36 6 ET367 10 10 11 8 10 E T375 ET378 E T382 E T383 10 10 9 10 8 H / 9 E T385 E T386 10 10 H 8 ET391
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et127et191et367et378+16et391et400et401etf81etl811di75ec49772sd111c2656evk31-0501di75d10729212sc2438c33172di75
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VCBo-600V
Abstract: 30S3 A-213 ET191 SC-65 T151 T460 TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON ET-191
Contextual Info: ET191 g ± / < 7 - h TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING aw s, • : Outline Drawings *32' ■ ¡K H !: : Features • ■ffl High D .C . current gain • B f f f H ii High reliability 22. i A pplications • Switching regulators
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et191i95t/r89vcbo-600v30s3+6a-213sc-65t151t460triple diffused planer type power darlingtonet-191
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ET-191
Abstract: ET191 t930 A-213 SC-65 T151 T460 T760 ic AM 12A
Contextual Info: ET191 E ± ' < r7 - h :7 > ' > t Z ? TRIPLE D IFFU SED PLANER TYPE POW ER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING aw s, : Outline Drawings / 3 .2 ‘0I • W f i 1 Features • ffl High D .C . current gain • S ff fU të n I High reliability 2JL 1.6
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et191sc-65n-tgll819i95t/r89+7et-191t930a-213t151t460t760ic am 12a
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transistor m6e
Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.
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0d01b031si50a-0502sc3047t0-220ab+152sc35492sc35511si10a-1002sd8472sd1157transistor m6eet391et12752sc3551 equivalent1si50a-1002sb757et191et367m1011s150a-050
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1d500a-0301di200e-0551di200k-0551di200m-120+161di200ma-0501di200z-1001di200z-1201di200zn-1201di200zp-1201di300m-0506di15s-0501mb1400n-1206d130z-120enc4712sk28502sk2761esja58-06a1mbh-60d1mbh60d-090a6di15s050
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ET-191
Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*
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2sd9212sc29292sc35492sc3551+72sd11572sc3550et3832sd8342sd1073et393et-191
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et1275
Abstract: M101 2SC3551 equivalent
Contextual Info: B IP O LA R T R A N S IS T O R S R atings and Specifications COLLMER Q3 SEMICONDUCTOR INC M6E D • 22307^2 0D01b03 13 1 « C O L Buffer drive tra n sisto rs • B e st su ite d fo r d riv in g t r a n sis to r m o d u le s. • A ll t e r m in a ls are in su la te d fro m m o u n t in g plate.
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0d01b031si50a-0502sc3047t0-220ab+82sc35492sc35511si10a-1002sd8472sd1157et1275m1012sc3551 equivalent
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2sc2930
Abstract: 2SD930 ET-191 2sc2623 etg36-04 2SC2542 2SC2929 2SC3549 2SD1072 2SD1073
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400
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o-220abo-220f2sc29292sc3549+122sd10732sb8622sd11282sd9302sd27672sd6342sc2930et-1912sc2623etg36-042sc25422sd1072
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2sc4977
Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Contextual Info: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549
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2sc35502sd9212sc3551et383+162sc35052sc44192sc26562sc3030et1902sd9232sc4977transistor 2sc497725c26252sc26252sc20472sc4977 transistoret-1912sc47952sc3320et391
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2sb757
Abstract: 2SC3551
Contextual Info: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE
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2sc35492sc35502sc35512sc3505+72sc44192sc3030o-22qab1d500a-030etn35-030etm36-0302sb757
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2SC2625
Abstract: et190 equivalent ET191 2sc2625 equivalent ET206 2SC2929 2SD1072 2SD982 2SC2438 2SC2542
Contextual Info: パワーデバイス / Power Devices • パワートランジスタ (モールドタイプ) Power Transistors Molded types 超高速スイッチングトランジスタ High speed switching transistors 形 式 Device type VCBO VCEO 2SC2438 2SC2767
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2sc24382sc27672sc27682sc2769+132sc29442sc26262sc29292sc25422sc37232sc33172sc2625et190 equivalentet1912sc2625 equivalentet2062sd10722sd982
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25c2625
Abstract: 2SC2625 2SC2930 2SC3725 ETG36-040D 1000 volt npn 2sd922 2SC3866 Fuji 2SC2930 npn transistor 2sc2625
Contextual Info: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400
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o-220abo-220f2sc29292sc3549+162sd10732sb8622sd11282sd9302sd27672sd63425c26252sc26252sc29302sc3725etg36-040d1000 volt npn2sd9222sc3866fuji 2sc2930npn transistor 2sc2625
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2sc4977
Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
Contextual Info: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS
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2sc29292sc35492sd11572sd834+162sd10732sb8622sd11282sd9822sc27672sd10722sc4977transistor 2sc4977et-1902sc3320 transistor2sc2625 transistoret391et-3912sc47862sc48312sc4977 transistor
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2SC3033
Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
Contextual Info: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073
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o-220ab2sc29292sc35492sd1073+162sb8622sd11282sd9302sd27672sd8342sd9822sc3033transistor 2sc2246etg36-040d2sd9202sc24372sc2930et403 npn2sc3822sc303transistor et191
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2sd 4242
Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
Contextual Info: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57
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b15327s09162sd24311300m+11i200ei200zp2sd 4242c 38662sc4977c3866c 4242c3505c2656i50fc4383
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ET192
Abstract: ET-191 ET191 S320 S-321 S321
Contextual Info: ET 19 Series TCXO INFICON EDC Inc. Features: Quality Quartz Crystals and Oscillators SMD Oscillators 11.4 x 11.8 mm, Mechanical Trim, With or Without Voltage Control, Sinewave Output PARAMETERS Package Part# Frequency Range MHz Frequency Stability vs Temp. (±ppm)
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et191et192et-191s320+2s-321s321
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ET1275
Abstract: 1si50a-050 1SI50A-100 ET191 ET206 et191 to-3p M101 et391 2SC3551 equivalent 1SI10A-100
Contextual Info: BIPOLAR TRANSISTORS Ratings and Specifications COLL HER SEMICONDUCTOR INC [Q MÔE D • 25307^2 0DGlb03 131 * C 0 L Buffer drive transistors • Best su ited fo r d riv in g tra n s is to r m o d u le s. • A ll te rm in a ls are in su la te d fro m m o u n tin g plate.
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1si50a-0502sc3047o-220ab2sc3549+122sc35511si10a-1002sd8472sd1157et12751si50a-100et191et206et191 to-3pm101et3912sc3551 equivalent
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2SD921
Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
Contextual Info: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767
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nov-012sc29292sd11572sd834+152sd10732sd11282sd9212sc27672sd9822sc27682sc26252sc2625 equivalentet190 transistoret4012sc30302sc2625 transistor2sc3318et2062sc4242
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Contextual Info: P ow er d arlington transistors • T h e DC c u r r e n t g a i n is h i g h . • H ig h ly v e rs a tile Device type VCBO V o lts Vcí o V o lts Veto sus V o lts Ic Pc c o n t. A m p s . W a tts h tt m in . le A m ps. Vo V o lts 2SD1797 60 60 50 7 30
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2sd17972sd8332sd9162sd1726+62sd8342sd10732sd10712sd8352sd1072et366
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2SD1071
Abstract: 2SD923 ET-391 2sc2625 2SC2929 ET401 2sc4786 transistor 2sc2625 ET367 ET391
Contextual Info: TRANSISTORS 1 te 1&4I 1 IC AMPS V ceo V sus Max. Device Type VCEO V Pc Device Type Max. (sus) W NPN 180 80 2SD921 5 500 40 2SC4786 800 80 2SC3551 10 400 80 ET400 1000* 80 ET383 400 80 ET401 80 2SC4510 5 6 7 10 700 80 2SC3505 800 100 2SC4419 400 80 2SC2656
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2sd9212sc3551et3832sc3505+142sc44192sc26562sc30302sd923et3782sc26252sd1071et-3912sc2929et4012sc4786transistor 2sc2625et367et391
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