2SD834 Search Results

2SD834

Contextual Info: SavantIC Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Electronic ignitor ·Relay and solenoid drivers

2SC4510R

Abstract: ET127 ET-190 et190 ringing choke converter
Contextual Info: • /\°7 — x / W X / Power Devices # 1 Ir^ lt / \°7 — £ — U > K > h "7 > v JX. £ m s£ Devic«type 2SD833 2SD916 ET378 2SD834 2SD1073 2SD835 2SD1072 2SD1071 ET375 ET190 ET191 VcBO V £0 Power darlington transistors Ic -,$£5 Cont. Amps. Watts <Mm.

ET-191

Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*

IMO 731 relay

Abstract: 2SD834 T151
Contextual Info: 2SD834 N P N = m i i ï M T R IPLE D IFFU S E D P LA N E R T Y PE HIGH P O W E R D A R LIN G T O N 7 i ' - i - ï ï i S W IT C H IN G X - iv f- 's ÿ fB Features • High D. C. current gain • Low saturation voltage • A S O ^ J av.' • f t lS f H i Excellent safe operating area

Contextual Info: 2SD834 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

2SD834

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: Inchange Semiconductor Product Specification 2SD834 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Electronic ignitor

2SD834

Contextual Info: , Line. c/.£ii£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SD834 Outline Drawings TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON TO-220AB SWITCHING • Features • High D.C. current gain

2SD834

Contextual Info: 2SD834 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON SWITCHING Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage Excellent safe operating area High reliability 1 : Base 2 : Collector 3 : Emitter Applications

2SD921

Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
Contextual Info: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767

Contextual Info: 2SD834 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON NP SWITCHING X - iK r 9 - > 9 n • 4 # « : F e a tu r e s • hpE^iftv.' High D. C. cu rren t gain • Low saturation voltage • Excellent safe operating area • B i t ÎB të High reliability ■ Æ 3Ü I ! A p p l i c a t i o n s

etg36 040d

Abstract: 2SC2930 diode b6 k 450 ETG36-040C 2SD1071 2SD1073 2SD1726 2SD1797 2SD2350 2SD833
Contextual Info: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

2sc4977

Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Contextual Info: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549

ET-191

Contextual Info: K l Power darlington transistors • The DC c u rre n t gain is high, • H ig h ly ve rsatile Dc'vii;« typo Volts Volts V geo sus Volts 60 60 50 7 30 800 3 1.5 — 80 80 80 7 60 2000 3 3 1.0 80 80 80 7 40 1000 3 1.5 1.0 150 100 80 7 25 400 5 2 2.0 VcESO

2SC2625

Abstract: et190 equivalent ET191 2sc2625 equivalent ET206 2SC2929 2SD1072 2SD982 2SC2438 2SC2542
Contextual Info: パワーデバイス / Power Devices • パワートランジスタ （モールドタイプ） Power Transistors Molded types 超高速スイッチングトランジスタ High speed switching transistors 形 式 Device type VCBO VCEO 2SC2438 2SC2767

2SC2930

Abstract: ETG36-040D diode B4 diode b6 k 450 ETG36-040C 2SD1071 B4 diode 2SD2350 2SD1726 2SD833
Contextual Info: Transistors COLLMER SEMI CONDUCTOR I NC 2230712 MAE D 0001b02 2T 2 ICOL »* 2 °\ High speed switching darlington transistors • These are o f d arling to n typ e and are pro vided w ith a h ig h er hFE. • S w itch in g speed is in th e rang e o f tf=1jas.

2SD818

Abstract: 2SD844 fst 240 2sb764 2SD859 2SD811 2SD812 2SD813 2SD814 2SD814A
Contextual Info: - 226 - T a = 2 5 eC . * E P ( ä T c = 2 5 ‘ C »CBO m Ic(DC) Pc Pc* (A) (W) (W) (V) tt (UA) (T a = 2 5 t : ) U/tr V/Nr" »CB (V) M lldA/ (V) m hp fmay^ (A ) 1" (V) [* E P (S typ ffi] '(V)' '(V)' Ic (A) 0.5 6 50 1000 900 10 40 5 PA 80 80 5 40 50 80 40

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2sc4977

Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
Contextual Info: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS

2SD883A

Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150

2SC3033

Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
Contextual Info: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073

48v to 230v inverters circuit diagram

Abstract: i300n bi50l120 2SC 2625 transistor 7MBR10NF120 2RI100G-160X2PX3 EVK71-050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog
Contextual Info: Applications hiiiftH— j\\ Note: This catalog describes the m ain usages o f pow er transistors FUJI supplies these versatile elem ents fo r a w ide range of electronic equipm ent. Please contact FUJI fo r your particular application. 63 ; r - — I • Electronic ignitor use

14D241

Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
Contextual Info: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61

2SD1071

Abstract: 2SD1073 2SD1726 2SD1797 2SD2350 2SD833 2SD834 2SD835 2SD916 ETG36-040C
Contextual Info: T ra n sisto rs COLLHER Q SEMICONDUCTOR INC 4ÖE » • 2330712 OODlbOa 2T2 «COL High speed sw itch in g d arlin gton transistors • These are o f d arling to n typ e and are provided w ith a h ig h er hFE. • S w itchin g speed is in th e rang e o f tf=1|as.